CMD201P5 - DC-20 GHz GaAs Power Amp +27dBm | Qorvo
부품 번호: CMD201P5 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $95 | $95.00 |
| 10 | $88 | $880.00 |
| 100 | $79 | $7,900.00 |
| 500 | $72 | $36,000.00 |
| 1,000 | $66 | $66,000.00 |
CMD201P5 개요
A distributed power amplifier is a class of RF/microwave amplifier in which multiple transistor stages are connected via an artificial transmission-line structure, allowing the gain stages to combine their outputs coherently across extremely wide bandwidths. Within the amplifier hierarchy, the CMD201P5 sits as a power-amplifier-stage MMIC, part of the broader family of RF amplifiers within microwave semiconductors. The distributed topology is what enables its DC-to-20 GHz (L, S, C, X, Ku, and K band) frequency coverage, something reactive-matched narrowband designs cannot achieve.
Key features include the very wide DC to 20 GHz bandwidth, 11 dB of flat gain, high linearity with +37 dBm output IP3, and a robust +27 dBm P1dB output power rating. The 50-ohm matched input and output design eliminates the need for external RF port matching networks, dramatically simplifying PCB design and reducing board area.
Technically, the GaAs MMIC process provides high transition frequency and consistent performance across the multiband range. The distributed amplifier architecture trades some efficiency for bandwidth, making the part especially attractive where a single amplifier must cover multiple legacy and modern frequency bands.
Typical applications include electronic warfare and radar transmitters, wideband test and measurement signal chains, and multi-octave communication links covering L through K band.
Design consideration: distributed amplifiers draw DC current continuously, so thermal management of the exposed QFN pad with a solid via-fenced ground connection is essential for reliability.
This page synthesizes distributor pricing, verified datasheet parameters, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: CMD201P5 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
이 제품에는 사용 가능한 드롭인 대체품이 없습니다.
대체품 요청CMD201P5 최대 정격 & 전기적 특성
| Technology | GaAs MMIC distributed power amplifier |
| Frequency Range | DC to 20 GHz |
| Gain | 11 dB |
| Output P1dB | +27 dBm at 10 GHz |
| Output IP3 | +37 dBm at 10 GHz |
| Impedance | 50 ohm matched (RF ports) |
| External RF Matching | Not required |
| Bands Covered | L, S, C, X, Ku, K |
| 패키지 | 32-QFN (5x5 mm) |
| 실장 유형 | Surface Mount |
CMD201P5 32-qfn (5x5 mm) 핀 구성 가이드
CMD201P5(32-qfn (5x5 mm) 패키지)의 핀 구성입니다. 이 아날로그 부품에는 입력, 출력, 전원 공급 핀이 있습니다. 오프셋 널, 보상, 인에이블 핀 구성은 제조사 데이터시트를 참조하십시오. 신호 컨디셔닝 및 증폭기 회로에 이상적입니다.
다음에 대한 상세 핀아웃 데이터 없음: CMD201P5.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
안전 동작 영역
일반적인 애플리케이션
CMD201P5 적합 용도: 6 애플리케이션s: Electronic Warfare and Jamming Systems, Wideband Radar Transmitters, Test and Measurement Signal Chains, Multi-Band Communication Links, Instrument-Grade Driver for Mixers and Modulators, Aerospace and Defense Prototyping Platforms.
Electronic Warfare and Jamming Systems
Wideband EW receivers and transmitter/jamming chains require amplification that remains flat across multiple octaves so a single front end can address threat emitters anywhere from L to K band. The CMD201P5 fits this role directly: its DC to 20 GHz bandwidth, 11 dB of gain, and +37 dBm output IP3 at 10 GHz preserve signal fidelity while delivering +27 dBm P1dB drive for wideband jamming waveforms. In a typical transmit chain, the MMIC is placed between a fast-tuning synthesizer and a higher-power final stage, using its 50-ohm matched ports to eliminate band-switched matching networks. The distributed topology adds no band-selective filtering, so frequency agility is limited only by the synthesizer, a decisive advantage in reactive EW scenarios.
추천
Wideband Radar Transmitters
Modern multi-band and ultra-wideband radar systems transmit chirped or modulated waveforms whose instantaneous bandwidth can span gigahertz, demanding a driver amplifier with uniform gain and strong linearity across the full band. The CMD201P5 addresses this with DC to 20 GHz coverage, 11 dB gain flatness, and a +27 dBm P1dB with +37 dBm OIP3 at 10 GHz, which keeps compression-induced distortion low on high crest-factor chirps. In practice the amplifier is inserted after the waveform generator and before the T/R module power stage; its 50-ohm matched input simplifies interconnect with coaxial or microstrip distribution networks. Thermal design with a via-fenced exposed pad sustains the continuous DC bias that distributed topologies require.
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Test and Measurement Signal Chains
Vector network analyzers, spectrum analyzer tracking chains, and broadband signal sources need a gain block whose response does not vary with band selection, because calibration complexity and flatness errors scale with gain ripple. The CMD201P5 provides 11 dB of gain from DC to 20 GHz with 50-ohm matched ports, allowing it to be dropped into coaxial test fixtures without tuning. Its +37 dBm output IP3 at 10 GHz keeps harmonics and intermodulation products low when amplifying multi-tone test signals, and the +27 dBm P1dB provides enough drive for mixer and filter compression testing. The 32-QFN 5x5 mm surface-mount package also permits integration onto evaluation boards for automated test equipment.
추천
Multi-Band Communication Links
Satellite ground terminals, point-to-point microwave links, and software-defined radio transceivers increasingly cover several bands with one RF chain to reduce hardware count. The CMD201P5 supports this consolidation by amplifying anywhere from L through K band with constant 11 dB gain, removing the need for parallel band-specific amplifiers and their switching losses. Its +27 dBm P1dB output can directly drive a medium-power chain or a block upconverter, while the +37 dBm OIP3 at 10 GHz preserves modulation quality for high-order QAM signals. Because no external RF matching is required, the same PCB layout serves multiple band plans, shortening qualification cycles for multi-market product variants.
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Instrument-Grade Driver for Mixers and Modulators
Passive double-balanced mixers and IQ modulators require a specific LO or RF drive level, typically around +13 to +27 dBm depending on the design, to achieve rated conversion loss and isolation. The CMD201P5 delivers up to +27 dBm P1dB across DC to 20 GHz, making it an ideal broadband LO or RF driver whose amplitude stays consistent regardless of the selected band. Its 11 dB gain converts a 0 dBm synthesizer output to the required drive level, and the +37 dBm OIP3 at 10 GHz limits LO-chain intermodulation products from leaking into the mixer's IF as spurious tones. The 50-ohm matched ports simplify the LO distribution tree in modular instrument architectures.
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Aerospace and Defense Prototyping Platforms
For defense prototyping and modular microwave assemblies, such as X-Microwave block-based systems, the CMD201P5 is available on drop-in amplifier blocks that expose its DC to 20 GHz bandwidth, 11 dB gain, and +27 dBm P1dB in a connectorized or tile format. This allows system architects to validate link budgets and linearity measurements with +37 dBm OIP3 at 10 GHz before committing to a custom 32-QFN 5x5 mm PCB layout. In prototype builds, the 50-ohm matched ports connect directly to coaxial assemblies, and the distributed topology confirms gain flatness across all mission bands in a single test session, accelerating the path from breadboard to flight hardware.
추천
추천 제품 요약
엔지니어링 참조 데이터: CMD201P5 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 |
|---|---|
| Package | 32-QFN (5x5 mm) |
| Brand | Qorvo |
| Frequency Range | DC to 20 GHz |
| Gain | 11 dB |
| Output P1dB | +27 dBm at 10 GHz |
| Output IP3 | +37 dBm at 10 GHz |
| RF Matching | 50 ohm internal, none required |
| Technology | GaAs MMIC distributed |
주요 차별점
- True DC-coupled frequency coverage (vs Typical reactive-matched MMIC PAs)
- No external RF matching required (vs Bare-die or unmatched MMIC alternatives)
- High linearity at 20 GHz-class bandwidth (vs Lower-power wideband driver amplifiers)
설계 노트
Distributed amplifiers draw substantial DC current across the full band because every gain cell is biased continuously. Estimated: dissipation equals (Vd x Id) minus RF output power; for a class of parts with roughly +27 dBm output, package-level power dissipation can reach several watts. The exposed pad of the 32-QFN 5x5 mm package must be soldered to a grounded thermal via field (a grid of plated vias under the pad) connected to internal ground and thermal planes. Verify junction temperature against the datasheet thermal resistance using your actual supply voltage and current before finalizing the layout.
Use a coplanar waveguide or microstrip 50-ohm transmission line from the RF connectors directly to the RF-in and RF-out pads, keeping the transitions as short as possible to preserve return loss to 20 GHz. Place DC blocking capacitors on the RF ports if the datasheet application circuit requires them, selecting self-resonant frequencies above 20 GHz. Decouple the drain bias line with a network (for example 100 pF in parallel with a bulk capacitor and a series resistor or ferrite) to prevent gain ripple and low-frequency instability through the bias path.
Apply gate bias before drain bias (or follow the datasheet power-up sequencing) to keep the FET cells in a safe quiescent region during turn-on; applying drain voltage with an uncontrolled gate can cause current overshoot. Also verify that no DC appears across the RF ports unless the design intends DC coupling, since the part operates down to DC. Finally, do not assume a second source: no verified drop-in equivalent in the same 32-QFN footprint was found, so a redesign would be required for substitution.
규정 준수 정보
Compliance status was not stated in the retrieved web data. Consult the Qorvo product page or request a certificate of conformance for RoHS, REACH, and conflict-minerals status.
