EL7202CSZ-T7 - 2A Dual MOSFET Driver, Non-Inverting SOIC-8 | Renesas
부품 번호: EL7202CSZ-T7 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $4.55 | $4.55 |
| 10 | $4.1 | $41.00 |
| 100 | $3.45 | $345.00 |
| 500 | $2.95 | $1,475.00 |
| 1,000 | $2.55 | $2,550.00 |
EL7202CSZ-T7 개요
A MOSFET driver is a specialized gate-driver IC that translates low-current logic-level signals (from microcontrollers, clock generators, or PWM controllers) into the high peak currents required to rapidly charge and discharge the gate capacitance of a power MOSFET or IGBT. As a member of the gate-driver IC category, it sits between the control logic layer and the power-conversion layer in the broader power-management hierarchy: gate driver -> driver IC -> power management IC -> semiconductor. Because MOSFET and IGBT gates can present several nanofarads of input capacitance, naive TTL/CMOS drivers cannot switch them quickly; the resulting slow edges cause switching losses, EMI, and shoot-through in half-bridges.
Key features of the EL7202CSZ-T7 include 2.0 A peak output current per channel, matched-channel architecture for symmetric rise/fall timing, a wide 4.5 V to 15 V operating supply, low quiescent current, and TTL/CMOS-compatible inputs. The 8-pin SOIC footprint exposes both inverting and non-inverting channel outputs internally tied in parallel for higher peak current, with an internal connection that uses non-inverting logic on its single channel-2 pin and inverting logic on its channel-1 pin for maximum design flexibility.
Typical applications are switching power supplies, DC-DC converters, motor drives, MOSFET/IGBT drivers for half-bridges, clock-driver replacement, and high-speed line drivers. The matched channels are particularly valuable where timing skew between high-side and low-side signals would otherwise create shoot-through, making this driver a strong choice for synchronous rectifier control in telecom and industrial power systems.
When designing with this part, observe the absolute maximum supply voltage of 16 V, place a 1 µF bypass capacitor within 0.25 inch of the VDD pin, and keep the high-current output traces short to limit parasitic inductance. The non-inverting configuration means a logic HIGH on the input drives the output HIGH, so any inverting behavior must be implemented externally.
This page synthesizes distributor pricing, drop-in Renesas replacements, and PCB layout notes not consolidated in the manufacturer datasheet, supporting faster selection for new designs and maintenance of legacy DS0026-style clock driver boards.
드롭인 대체품: EL7202CSZ-T7 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: EL7202CSZ-T7 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Peak Output Current, RoHS Status.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
EL7202CSZ-T13
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
EL7202CSZ
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
EL7212CSZ
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
EL7212CSZ-T7
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UCC27322DGN+UCC27322DGNR
✅ 드롭인✓ 재고 있음
$1.31 / 개
데이터시트 보기 →UCC27321DGN
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
EL7202CSZ-T7 최대 정격 & 전기적 특성
| Product Type | Low-Side Gate Driver IC |
| Driver Configuration | Non-Inverting, Dual Channel |
| Number of Drivers | 2 |
| Peak Output Current | 2.0 A (per channel) |
| Supply Voltage (VDD) | 4.5 V to 15 V |
| Absolute Max Supply Voltage | 16 V |
| Input Compatibility | TTL/CMOS logic-level |
| Propagation Delay | Approximately 20 ns |
| Architecture | Proprietary Turbo-Driver |
| Channel Match | Matched channels for symmetric timing |
| 패키지 | 8-pin SOIC |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant (Pb-free) |
| Tape and Reel Suffix | -T7 (Tape and Reel) |
| Series Family | EL7202 / EL7212 / EL7222 |
EL7202CSZ-T7 핀 구성
| 핀 1 | IN1 — Logic input for channel 1 (non-inverting reference for EL7202) |
| 핀 2 | IN2 — Logic input for channel 2 (non-inverting reference for EL7202) |
| 핀 3 | VDD — Supply voltage, 4.5 V to 15 V |
| 핀 4 | OUT1 / GND — Channel 1 output (dual-function ground on some variants per datasheet) |
| 핀 5 | OUT2 — Channel 2 output |
| 핀 6 | GND — Ground / power return |
| 핀 7 | NC — Not connected (per datasheet) |
| 핀 8 | NC — Not connected (per datasheet) |
일반적인 애플리케이션
EL7202CSZ-T7 적합 용도: 7 애플리케이션s: Synchronous Rectifier Drive in DC-DC Converters, MOSFET/IGBT Half-Bridge Gate Driver, DS0026-Style Clock Driver Replacement, Switching Power Supply (SMPS) Driver Stage, Brushless DC (BLDC) Motor Drive Signal Chain, Test and Measurement Pulse/Clock Generation, Class-D Audio Amplifier Output Stage.
Synchronous Rectifier Drive in DC-DC Converters
The EL7202CSZ-T7 suits synchronous rectifier drive in DC-DC converters because its 2.0 A peak output current charges and discharges MOSFET gate capacitance in tens of nanoseconds, minimizing body-diode conduction and improving converter efficiency beyond 90%. Placed between the PWM controller and the low-side / high-side MOSFET pair, the matched dual channels keep timing skew small, which reduces shoot-through risk in the half-bridge. The 4.5 V to 15 V supply range tracks the 5 V and 12 V rails common in telecom and industrial POL converters.
추천
MOSFET/IGBT Half-Bridge Gate Driver
For MOSFET or IGBT half-bridge gate drive, the EL7202CSZ-T7's matched dual channels deliver symmetric rise and fall timing to both the high-side and low-side switch, a key requirement to prevent cross-conduction. The 2 A peak easily overcomes the several nanofarads of gate charge found in typical 30 V to 100 V MOSFETs and small IGBTs. Used with a bootstrap supply or level shifter for the high-side channel, it provides a compact discrete gate-drive solution for motor-control and class-D amplifier half-bridges.
추천
DS0026-Style Clock Driver Replacement
The EL7202CSZ-T7 functions as a modern, pin-compatible replacement for legacy DS0026 dual clock drivers, providing identical SOIC-8 footprint and substantially faster switching through its Turbo-Driver architecture. Designers maintaining older telecom or test-and-measurement boards that used the DS0026 can drop the EL7202CSZ-T7 onto the same land pattern to gain tighter timing margins and lower propagation delay. Renesas rates the part for continuous operation across the legacy 5 V supply, making retrofit a non-disruptive change.
추천
Switching Power Supply (SMPS) Driver Stage
Inside switching power supplies, the EL7202CSZ-T7 drives the main switching MOSFET from a PWM controller, where its 2 A peak current and ~20 ns propagation delay preserve the sharp edges the controller intends. This keeps switching losses low and EMI bandwidth predictable. The wide 4.5 V to 15 V supply means the driver can run from the same bulk rail that feeds the converter, simplifying bias design in offline, telecom, and industrial SMPS topologies.
추천
Brushless DC (BLDC) Motor Drive Signal Chain
In BLDC motor drives, the EL7202CSZ-T7 drives the gate of each low-side MOSFET per phase, where the matched two channels let one IC handle two phases of a three-phase bridge when paired with a complementary high-side driver. Its 2 A peak current keeps PWM edges fast enough to limit switching loss at 20 kHz to 100 kHz PWM frequencies typical of sensored and sensorless BLDC drives. The 8-pin SOIC footprint supports compact motor-control PCBs where board area is constrained.
추천
Test and Measurement Pulse/Clock Generation
The EL7202CSZ-T7 makes a clean pulse or clock generator stage in test and measurement fixtures because its matched channels deliver symmetric positive and negative edges at the output, while the Turbo-Driver architecture keeps rise/fall times in the single-digit nanoseconds. Driving 50 Ω transmission lines on a test bench requires buffering the driver, and the 2 A peak current is sufficient to slew typical 20 pF to 50 pF probe loads rapidly. The non-inverting configuration lets bench logic-level sources feed the inputs directly without extra inversion.
추천
Class-D Audio Amplifier Output Stage
Inside class-D audio amplifiers, the EL7202CSZ-T7 can drive the gates of the output MOSFET pair in each half-bridge of the modulator. Its fast 2 A peak switching and matched channels suppress switching dead-time asymmetry, which directly affects audio THD+N. The 4.5 V to 15 V VDD range allows the driver to operate from the same ±12 V or single-rail supplies used in many small-to-medium class-D designs, eliminating extra bias rails for the gate-driver stage.
추천
추천 제품 요약
엔지니어링 참조 데이터: EL7202CSZ-T7 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | EL7202CSZ-T13 | EL7202CSZ | EL7212CSZ | EL7212CSZ-T7 | UCC27322DGN | UCC27321DGN |
|---|---|---|---|---|---|---|---|
| Brand | Renesas Electronics | Renesas Electronics | Renesas Electronics | Renesas Electronics | Renesas Electronics | Texas Instruments | Texas Instruments |
| Package | 8-pin SOIC | 8-pin SOIC - same | 8-pin SOIC - same | 8-pin SOIC - same | 8-pin SOIC - same | 8-pin SOIC (PowerPAD) | 8-pin SOIC (PowerPAD) |
| Number of Channels | 2 | 2 | 2 | 2 | 2 | 2 | 1 |
| Logic Polarity | Non-inverting | Non-inverting | Non-inverting | Inverting | Inverting | Non-inverting | Inverting |
| Peak Output Current | 2.0 A | 2.0 A | 2.0 A | 2.0 A | 2.0 A | 4.0 A | 4.0 A |
| Supply Voltage Range | 4.5 V to 15 V | 4.5 V to 15 V | 4.5 V to 15 V | 4.5 V to 15 V | 4.5 V to 15 V | 4.5 V to 18 V | 4.5 V to 18 V |
| Architecture | Proprietary Turbo-Driver | Proprietary Turbo-Driver | Proprietary Turbo-Driver | Proprietary Turbo-Driver | Proprietary Turbo-Driver | TI standard gate-driver | TI standard gate-driver |
| RoHS / Pb-free | Yes (-T7 suffix) | Yes (-T13 suffix) | Legacy (pre-RoHS variant exists) | Legacy (pre-RoHS variant exists) | Yes (-T7 suffix) | Yes | Yes |
주요 차별점
- Matched dual-channel output with proprietary Turbo-Driver architecture (vs EL7212CSZ-T7)
- Pin-compatible RoHS / Pb-free modern replacement for legacy EL7202CSZ (vs EL7202CSZ (legacy))
- Lower 2 A peak current with cleaner timing vs. higher-current alternatives (vs UCC27322DGN)
설계 노트
Estimated: with VDD = 12 V and a 1 kHz toggle into a 1 nF gate, gate charge Q = 1 nC per transition, so dynamic power dissipation is P_dyn = Q * VDD * f = 1e-9 * 12 * 1e3 = 12 µW per channel - negligible. Sustained DC output current should not exceed the rated peak for more than a few microseconds because the SOIC-8 package dissipates roughly 0.5 W maximum at 25 °C without copper pour on a standard JEDEC test board. Always place a 1 µF ceramic bypass capacitor within 0.1 inch of the VDD pin to keep the supply rail stable under the 2 A peak switching transients.
Keep the high-current output traces from OUT1 / OUT2 as short and wide as possible, because each 2 A transition into even 10 nH of parasitic trace inductance generates V = L * dI/dt spikes of several volts that can disturb the gate waveform. Use a ground plane on the layer directly beneath the SOIC-8 footprint to provide a low-impedance return for the high di/dt gate currents. Place the input trace away from the output trace to avoid capacitive coupling that can create shoot-through-like double pulsing.
Do not exceed 16 V on VDD; a momentary 18 V transients will permanently damage the gate-driver output stage. For half-bridge designs, do not cross-wire input and output logic - the EL7202CSZ-T7 is non-inverting, so a logic HIGH on the input drives the output HIGH; any required inversion must be done at the controller, not by miswiring the inputs. Finally, the legacy EL7202CSZ variant lacks the RoHS / Pb-free guarantee of the -T7 / -T13 suffixes - confirm your design's compliance posture before selecting the older reel code.
규정 준수 정보
RoHS compliance and Pb-free status indicated by the -T7 reel-code suffix per Renesas product family convention. AEC-Q100 qualification has not been confirmed in the verified data; industrial-grade consumers should request the automotive-grade variant separately if needed.
