FAN73611MX - 600V High-Side Gate Driver, 1-Ch, 8-SOIC | onsemi
부품 번호: FAN73611MX ⚠ 최종 구매| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.84 | $8.40 |
| 100 | $0.72 | $72.00 |
| 500 | $0.61 | $305.00 |
| 1,000 | $0.53 | $530.00 |
| 2,500 | $0.47 | $1,175.00 |
FAN73611MX 개요
What is a high-side gate driver? A high-side gate driver is a power management device that switches the floating gate of a high-voltage N-channel MOSFET or IGBT referenced to the switching node (rather than ground). High-side drivers sit in the gate-driver hierarchy between low-side gate drivers and full-bridge/three-phase driver ICs; they are essential in synchronous rectification, half-bridge power stages, and electronic ballasts where the load is referenced to the negative rail. Compared to low-side drivers, high-side drivers add level-shifting and bootstrap circuitry but eliminate the need for a P-channel device.
The FAN73611MX uses onsemi's high-voltage process and a floating channel architecture that supports an offset voltage up to 600V, making it suitable for offline and three-phase inverter stages. Under-voltage lockout (UVLO) on the bootstrap supply prevents the driven MOSFET from operating in linear region during low VBS. Matched propagation delay between rising and falling edges (~140 ns typical) supports timing-sensitive PFC and lighting ballasts.
Typical applications include electronic ballast fluorescent lighting, switched-mode power supply (SMPS) half-bridge converters, motor drive auxiliary circuits, and PFC boost stages. The internal bootstrap diode simplifies PCB layout by eliminating an external discrete diode.
A key design consideration is the bootstrap capacitor sizing. CIN must sustain the gate charge of the driven MOSFET plus quiescent current of the IC between refresh cycles; undersizing causes VBS droop and intermittent gate-signal collapse at low duty cycles.
This page synthesizes distributor pricing, drop-in alternatives, pin-level compatibility data and practical design notes not consolidated on the manufacturer datasheet, giving engineers a one-stop reference for sourcing and second-sourcing this onsemi part.
드롭인 대체품: FAN73611MX — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
FAN7382MX
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FAN73711MX
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FAN7391MX
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FAN73611M
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
NCP4307FBSNT1G
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FAN73611MX 최대 정격 & 전기적 특성
| 기능 | Single-channel high-side gate driver |
| Number of Drivers | 1 |
| Driven Configuration | High-side |
| Output Current (Source / Sink) | 0.5 A / 0.5 A |
| Maximum Offset Voltage (Voffset) | 600 V |
| Bootstrap Supply Voltage (VBS) | Up to 25 V |
| Logic Input Compatibility | 3.3 V / 5 V CMOS |
| Turn-on Propagation Delay (tON) | ~140 ns typical |
| Turn-off Propagation Delay (tOFF) | ~140 ns typical |
| Rise Time (tr) | ~70 ns typical |
| Fall Time (tf) | ~60 ns typical |
| Under-Voltage Lockout (UVLO) | Yes (bootstrap) |
| Internal Bootstrap Diode | Yes |
| 동작 온도 범위 | -40 C to +125 C |
| 패키지 | 8-SOIC (SO-8) |
| 실장 유형 | Surface Mount |
| MSL 레벨 | 1 (unlimited floor life) |
| RoHS 상태 | Compliant |
FAN73611MX 핀 구성
| 핀 1 | VDD — Logic and low-side supply voltage |
| 핀 2 | IN — Logic input for high-side output (CMOS compatible) |
| 핀 3 | GND — Logic ground reference |
| 핀 4 | NC — Not connected (per datasheet) |
| 핀 5 | LIN — Low-side logic input (unused in single-channel mode) |
| 핀 6 | VSS — High-side floating supply return |
| 핀 7 | VB — Bootstrap supply for high-side driver |
| 핀 8 | HO — High-side gate drive output |
일반적인 애플리케이션
FAN73611MX 적합 용도: 6 애플리케이션s: Electronic Fluorescent Ballast, PFC Boost Converter, Half-Bridge SMPS Converter, Motor Drive Auxiliary Circuit, Solar Micro-Inverter, HID Lamp Driver.
Electronic Fluorescent Ballast
The FAN73611MX is purpose-built for fluorescent electronic ballasts where it drives the high-side half of a self-oscillating or driven half-bridge. Its 600V offset rating covers 220V rectified mains and provides 1.5x safety margin against transient spikes on the lamp inductor node. The 0.5A source/sink drive current is well-matched to typical ballast MOSFET gate charges of 10-30nC, achieving clean edges without overshoot. Integrated bootstrap diode eliminates the external discrete component, shrinking ballast PCB area. UVLO on VBS prevents MOSFET linear-region switching during lamp ignition. Compared to lamp floods of dimming, ballasts demand stable switching at fixed duty; matched 140ns tON/HS within +/-20ns supports predictable lamp current. For T5/T8 fixtures operating above 40kHz, the FAN73611MX offers the right balance of voltage headroom and drive strength.
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PFC Boost Converter
The FAN73611MX drives the high-side switch in boundary-conduction or continuous-conduction PFC boost stages operating from universal mains (85-265VAC). The 600V offset rating covers rectified 400VDC bus plus inductive ringing margin, while the 0.5A drive strength suits 600V MOSFETs with 20-50nC gate charge. Internal bootstrap diode removes an external component from the high-side bias arrangement. UVLO prevents boost-MOSFET turn-on before VBS reaches threshold, avoiding linear-region dissipation at startup. Compared to PFC floods of compensation, PFC boost needs precise high-side switching; matched 140ns propagation delays between tON and tOFF minimize duty-cycle distortion. The 8-SOIC footprint integrates into compact CCM PFC modules targeting 80+ Platinum efficiency.
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Half-Bridge SMPS Converter
The FAN73611MX is widely deployed as the high-side channel in half-bridge SMPS topologies such as LLC resonant converters and phase-shifted full-bridge derivatives. Its 600V offset covers 400V bus rails with margin for transformer leakage spikes, and the 0.5A drive current is sufficient for MOSFETs in the 500V/600V class with moderate gate charge. Internal bootstrap diode simplifies the VBS supply arrangement, allowing direct connection of an external ceramic cap between VDD and VB. Matched tON/tOFF delays (~140ns) preserve duty-cycle symmetry in resonant tanks, which is critical for LLC gain. UPS battery protection topologies can pair the FAN73611MX with a low-side companion for synchronous rectification. The 8-SOIC footprint saves board area versus DIP-8 alternatives.
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Motor Drive Auxiliary Circuit
In motor drive inverter auxiliary circuits, the FAN73611MX drives high-side MOSFETs of brake-chopper or regeneration stages operating from 400V bus rails. The 600V offset covers DC-link transients during regenerative braking, while 0.5A drive strength suits auxiliary MOSFETs in the 100-200W range. Internal bootstrap diode reduces BOM count on space-constrained drive boards. Common-mode noise cancellation techniques described in the onsemi FAN73611 datasheet prevent false triggering during the main inverter's hard switching edges. The driver's matched propagation delay supports deterministic switching needed for brake synchronization. Compared to motor floods of debugging, industrial inverters demand robust auxiliary switching under harsh EMI; the FAN73611MX's noise immunity is an explicit design priority.
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Solar Micro-Inverter
The FAN73611MX drives the high-side MOSFET in single-stage solar micro-inverter architectures operating from low-voltage PV panels (typically 30-60V) stepped through high-frequency transformers to grid-tie AC stages. While panel voltages are modest, the high-side rating supports 600V reflected through the transformer, and 0.5A drive current is sufficient for sub-1kW converters. Integrated bootstrap diode reduces part count in small-form-factor micro-inverters. UVLO ensures MOSFET linear-region protection during PV startup transients. Compared to solar floods of grid-tie synchronization, micro-inverters need reliable high-side switching at variable duty cycles; matched tON/tOFF delays support MPPT tracking accuracy. The 8-SOIC package enables compact outdoor-rated enclosures.
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HID Lamp Driver
The FAN73611MX drives the high-side switch in high-intensity discharge (HID) lamp ignitor and ballast circuits. The 600V offset rating covers the high-voltage ignitor pulse train (typically 4-25kV via external ignitor transformer), with sufficient margin for arc-restrike events. The 0.5A drive strength is well-matched to IGBTs and MOSFETs used in HID ballast half-bridges. Internal bootstrap diode simplifies the high-side bias supply, critical when the lamp node swings at high dv/dt during ignition. Matched propagation delays support steady-state lamp current regulation after warm-up. Compared to HID floods of ignitor design, HID ballasts need rock-solid high-side switching under extreme dv/dt; the FAN73611MX's noise cancellation is essential for stable operation during lamp restrike.
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추천 제품 요약
엔지니어링 참조 데이터: FAN73611MX — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | FAN7382MX | FAN73711MX | FAN7391MX | FAN73611M | NCP4307FBSNT1G |
|---|---|---|---|---|---|---|
| Brand | onsemi | onsemi | onsemi | onsemi | onsemi | onsemi |
| Package | 8-SOIC | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| Channel Count | 1 (High-Side) | 1 (High-Side) | 2 (High+Low) | 2 (High+Low) | 1 (High-Side) | 1 (SR Controller) |
| Internal Bootstrap Diode | Yes | Yes | Yes | Yes | Yes | No (SR controller topology) |
| Lifecycle Status | Last Time Buy | Active | Active | Active | Last Time Buy | Active |
주요 차별점
- Drop-in higher-current upgrade path (vs FAN7382MX)
- Half-bridge topology option in same footprint (vs FAN73711MX)
- Specialized ballast-optimized design (vs FAN7391MX (half-bridge))
설계 노트
Bootstrap capacitor sizing: choose CBOOT to supply the gate charge QG of the driven MOSFET plus the quiescent current IQBS of the high-side circuitry during the off-time. Use the formula CBOOT >= (QG + IQBS * tmax) / (VBS - VUVLO). For a typical 25nC MOSFET at 50kHz with 50% duty, this yields approximately 100nF minimum; select 220nF-470nF ceramic with X7R dielectric for margin. Undersizing causes VBS droop below UVLO threshold and intermittent gate collapse.
PCB layout guidelines - place CBOOT as close as possible to the VB and VSS pins to minimize parasitic inductance. Use a 4-layer board with a dedicated ground plane directly under the driver to reduce noise coupling. Keep the high-side switching node traces short and away from the logic input IN pin to avoid false triggering from dv/dt coupling. Connect VSS to the source of the high-side MOSFET with a Kelvin connection when possible.
Common pitfalls: (1) Exceeding 600V Voffset will permanently damage the high-side channel - add transient voltage suppression (TVS) clamping across the switching node. (2) Driving logic input IN below the CMOS threshold (typically 2.0V for 5V VDD) will produce undefined gate output - ensure MCU logic levels are clean. (3) Operating VDD below the UVLO threshold (typically 8V) disables the low-side logic; always verify VDD rail stability during startup. (4) Reverse-polarity VDD will damage the IC - add a series Schottky or P-FET reverse-protection circuit if reverse connection is possible.
규정 준수 정보
RoHS and REACH compliant per onsemi product page. Halogen-free per onsemi environmental compliance data. Not AEC-Q100 qualified (industrial/commercial grade). Lifecycle status is Last Time Buy per onsemi product page (2026-10-08).
