FF450R12KE4 - 1200V 450A Half-Bridge IGBT Module | Infineon
부품 번호: FF450R12KE4 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $160.75 | $160.75 |
| 10 | $155 | $1,550.00 |
| 100 | $148 | $14,800.00 |
| 500 | $142 | $71,000.00 |
| 1,000 | $135.46 | $135,460.00 |
FF450R12KE4 개요
An IGBT (Insulated Gate Bipolar Transistor) module combines multiple insulated-gate transistors and freewheeling diodes on an isolated substrate inside a rugged industrial package. IGBT modules occupy the middle of the power semiconductor hierarchy, bridging MOSFETs (lower voltage, higher frequency) and thyristors (highest power, lowest frequency). They are the workhorse switches of motor drives, solar inverters, and UPS systems above roughly 600 V and 100 A.
Key features of the FF450R12KE4 include its 1200 V collector-emitter blocking voltage (VCES), 450 A continuous collector current rating, and the Emitter Controlled diode that reduces reverse-recovery losses and voltage overshoot during turn-on. The TRENCHSTOP IGBT4 generation delivers optimized switching behavior for frequency-controlled inverter drives, balancing conduction and switching losses.
Technically, the trench/field-stop IGBT4 cell design lowers the saturation voltage for reduced conduction loss while the field-stop layer enables a soft tail current at turn-off, minimizing EMI stress on the inverter. The module supports operating temperatures up to 150 C and carries UL/CSA certification (UL1557 E83336), simplifying end-equipment safety approval. A variant with pre-applied thermal interface material (FF450R12KE4P) and an E-conformance version (FF450R12KE4_E) are available.
Typical applications include frequency-controlled industrial inverter drives, solar string inverters, UPS power stages, welding equipment, and traction auxiliaries - anywhere a 690 V-class DC bus requires a robust half-bridge switching stage in the several-hundred-ampere class.
Design consideration: verify short-circuit withstand time, gate-drive voltage margin, and DC-link busbar layout to limit parasitic inductance, which directly affects turn-off overshoot and snubber sizing.
This page synthesizes distributor pricing, drop-in alternatives within the FF450R12 family, and practical design notes not consolidated in the manufacturer datasheet.
드롭인 대체품: FF450R12KE4 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
FF450R12KT4
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FF450R12KE3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FF450R12KE4_E
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FF450R12ME4
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FF450R12IE4
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FS450R12KE3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FF450R12KE4 최대 정격 & 전기적 특성
| Configuration | Half-bridge (dual IGBT with diode) |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC) | 450 A |
| Technology | TRENCHSTOP IGBT4 (trench/field-stop) with Emitter Controlled diode |
| 패키지 | 62 mm EconoDUAL module |
| 실장 유형 | Chassis Mount (screw-down) |
| Maximum Operating Temperature | 150 C |
| Safety Certification | UL/CSA, UL1557 E83336 |
| RoHS 상태 | Compliant |
| Optional Pre-Applied TIM | Available (FF450R12KE4P) |
FF450R12KE4 62 mm econodual module 핀 구성 가이드
FF450R12KE4(62 mm econodual module 패키지)의 핀 구성입니다. 이 전력 소자는 게이트, 드레인, 소스 단자를 갖추고 있습니다. 비편향 패키지의 경우 정확한 핀 1 방향과 풋프린트 세부 정보는 제조사 데이터시트를 참조하십시오. 일반적인 응용 분야로는 전원 공급 장치 설계, 모터 구동, 부하 스위칭이 있습니다.
다음에 대한 상세 핀아웃 데이터 없음: FF450R12KE4.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
안전 동작 영역 (DC)
일반적인 애플리케이션
FF450R12KE4 적합 용도: 6 애플리케이션s: Industrial Inverter Drives, Solar String Inverters, UPS Power Stages, Welding Equipment, Traction and Rail Auxiliaries, Induction Heating and Power Supplies.
Industrial Inverter Drives
The FF450R12KE4 is purpose-built for frequency-controlled inverter drives, as stated in Infineon's product description. Its 1200 V blocking voltage supports 690 V AC line applications with proper margin, and the 450 A continuous rating covers mid-to-large motor drives in the 100-200 kW class. The TRENCHSTOP IGBT4 trench/field-stop technology balances conduction and switching losses at typical drive PWM frequencies, while the Emitter Controlled diode reduces reverse-recovery overshoot during dead-time commutation. Mounted on a liquid- or air-cooled heatsink with screw terminals, the 62 mm EconoDUAL module handles high RMS phase currents up to its 150 C junction limit while UL1557 E83336 certification eases drive-level safety approval.
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Solar String Inverters
Grid-tied solar string inverters operating from 800-1100 V DC strings require half-bridge switches with at least 1200 V blocking capability, which makes the FF450R12KE4 a direct fit. The Emitter Controlled diode's soft reverse recovery limits ringing across the stray inductance of the DC-link busbar, reducing EMI filter cost and turn-on losses at 8-16 kHz switching frequencies. The 450 A per-switch rating supports 100-150 kW three-phase inverter stages with the 62 mm chassis-mount baseplate spreading heat into a finned or liquid-cooled heatsink. Infineon's availability of a pre-applied thermal interface material version (FF450R12KE4P) improves thermal consistency in mass-production inverter assembly lines.
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UPS Power Stages
Uninterruptible power supply inverters and rectifier stages in the 100-250 kVA class commonly use 1200 V half-bridge modules on an 800 V DC bus, a role the FF450R12KE4 fills directly. Its 450 A rating provides headroom for battery-charging current peaks and short-duration overload conditions typical of UPS transfer events. The Emitter Controlled diode improves efficiency in the rectifier boost stage where diode reverse recovery dominates losses at elevated switching frequency. The module's UL/CSA certification (UL1557 E83336) and 150 C maximum operating temperature support the continuous-duty, high-reliability requirements of data-center and industrial UPS platforms.
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Welding Equipment
Industrial inverter welding power sources switch hundreds of amperes at 20-100 kHz from rectified mains, and the FF450R12KE4 serves this duty in high-power welders where its 1200 V rating tolerates 400/480 V AC three-phase inputs with a full-bridge topology. The trench/field-stop IGBT4 structure provides the rugged short-circuit behavior welders need against electrode short events, and the half-bridge configuration simplifies full-bridge or interleaved stage construction. The Emitter Controlled diode limits recovery spikes that would otherwise stress snubber components at high output current. The chassis-mount 62 mm package bolts directly to the welder's forced-air heatsink assembly for straightforward thermal integration.
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Traction and Rail Auxiliaries
Rail vehicle auxiliary converters (HVAC compressors, battery chargers, auxiliary inverters) run from 750 V DC to 1500 V DC traction buses and typically derate to 1200 V-class switching devices; the FF450R12KE4 fits these auxiliary stages where its 450 A rating covers compressor and blower motor drives. The module's industrial qualification and UL/CSA certification provide a documentation baseline for rail approval packages, and the 62 mm EconoDUAL footprint is widely used across the traction supplier ecosystem, easing second-source logistics. Infineon's digchips-listed description highlights suitability for 'superior solution for frequency controlled inverter drives', the same topology used in traction auxiliaries with vibration-rated screw mounting.
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Induction Heating and Power Supplies
Medium-frequency induction heating systems and high-power DC power supplies use half-bridge or full-bridge IGBT stages resonant at 10-50 kHz, where the FF450R12KE4's balanced E4 switching characteristics minimize total device loss. Its 1200 V rating accommodates 560-660 V DC link rails derived from three-phase rectification, and the 450 A current capability supports kilowatt-to-tens-of-kilowatts induction coils for melting, forging, and heat-treatment equipment. The Emitter Controlled diode keeps reverse-recovery charge low under the zero-voltage/zero-current switching transitions typical of resonant tanks. The robust 62 mm chassis-mount baseplate tolerates the thermally cyclic duty profiles of industrial heating equipment.
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추천 제품 요약
엔지니어링 참조 데이터: FF450R12KE4 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | FF450R12KT4 | FF450R12KE3 | FF450R12ME4 | FS450R12KE3 |
|---|---|---|---|---|---|
| Package | 62 mm EconoDUAL module | 62 mm EconoDUAL module - same | 62 mm EconoDUAL module - same | 62 mm EconoDUAL module - same | 62 mm module - same footprint |
| Brand | Infineon | Infineon | Infineon | Infineon | ABB |
| Voltage Rating (VCES) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Continuous Current (IC) | 450 A | 450 A | 450 A | 600 A | 450 A |
| IGBT Technology Generation | IGBT4 (E4, trench/field-stop) | IGBT4 (T4) | IGBT3 | IGBT4 (M-series) | IGBT3-class |
| Configuration | Half-bridge with Emitter Controlled diode | Half-bridge (dual) | Half-bridge (dual) | Half-bridge (dual) | Half-bridge (dual) |
주요 차별점
- Fourth-generation IGBT4 losses (vs FF450R12KE3)
- Emitter Controlled diode reduces overshoot (vs FS450R12KE3)
- Right-sized current rating avoids overpaying (vs FF450R12ME4)
설계 노트
Estimated: at a 50% duty, 300 A RMS load and an assumed VCE(sat) near 1.8 V, each IGBT dissipates roughly 300 A x 1.8 V = 540 W conduction loss plus switching losses. Mount the 62 mm EconoDUAL baseplate on a heatsink maintaining junction below 150 C (use 125 C design limit for lifetime margin). Apply thermal interface material evenly - or specify the FF450R12KE4P pre-applied-TIM variant - and tighten mounting screws to the datasheet torque in cross pattern.
Minimize the DC-link commutation loop between DC+ and DC- terminals: laminated busbars with overlapping positive/negative planes reduce stray inductance and therefore turn-off overshoot on the 1200 V module. Keep gate-driver loops short, route each gate-emitter pair as a twisted pair or adjacent traces, and place the desat/short-circuit sensing close to the auxiliary emitter pins. Verify overshoot at maximum load current stays below VCES with margin.
Do not exceed the 1200 V VCES rating - account for DC-link surge and regenerative pump-up during deceleration. Do not run the module without a verified gate-emitter clamp near 0 V when unpowered, since dv/dt on the collector can inject charge and partially turn the device on. When substituting a KE3 with a KE4, review dead-time and gate resistor values because switching-energy curves differ between generations.
규정 준수 정보
UL/CSA certified per UL1557 E83336 per datasheet listing. RoHS status from Infineon product listing; other compliance fields not stated in provided data.
