FF450R12KT4HOSA1 - 1200V 450A IGBT Module Half-Bridge | Infineon
부품 번호: FF450R12KT4HOSA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $285 | $285.00 |
| 10 | $263.5 | $2,635.00 |
| 100 | $242 | $24,200.00 |
| 500 | $222.1 | $111,050.00 |
| 1,000 | $205.75 | $205,750.00 |
FF450R12KT4HOSA1 개요
What is an IGBT module? An Insulated Gate Bipolar Transistor (IGBT) module is a high-power semiconductor switch that combines the high input impedance of a MOSFET gate with the low conduction loss of a bipolar transistor. A half-bridge IGBT module is two such switches in a totem-pole configuration with antiparallel diodes, used as the fundamental building block of voltage-source inverters. IGBT modules sit in the power-electronics hierarchy above discrete IGBTs and below complete inverter stacks, enabling motor drives, UPS systems, and renewable power conversion at the 100 kW to multi-MW scale.
Key specifications include a low VCE(sat) of 1.75 V (typical, IC = 450 A, VGE = 15 V, TJ = 25°C) that minimizes conduction losses, a rugged short-circuit capability with SCWT of 10 µs at VCC = 720 V, and a wide operating junction temperature range of -40°C to +150°C. The module uses the well-known 62 mm C-series mechanical footprint with screw-mount power terminals and is also available with pre-applied Thermal Interface Material (TIM) for faster assembly.
The device leverages TRENCHSTOP IGBT4 technology from Infineon, which combines a thin-wafer trench field-stop cell with a soft, fast-recovery Emitter Controlled 4 diode. This combination reduces switching losses by roughly 20% versus prior IGBT3 generations while maintaining low EMI through controlled di/dt and dv/dt. The positive temperature coefficient of VCE(sat) also enables easy paralleling for higher-current inverter stages.
Typical applications include industrial frequency-controlled motor drives (vector and servo), solar central inverters, three-phase UPS systems, and industrial welding equipment. The 1200 V class is the industry sweet spot for 690 V AC line-connected drives and 1000–1100 V DC-link photovoltaic or battery systems.
When designing with this module, ensure the DC-link voltage stays below 1200 V under all transient conditions including reverse-recovery spikes. Provide a low-inductance laminated busbar to control turn-off overshoot, and apply proper thermal paste (or use the TIM-equipped variant) to keep the baseplate-to-heatsink thermal resistance at the datasheet-published minimum. This module is UL/CSA certified under UL 1557 file E83336 for industrial equipment.
This page synthesizes distributor pricing, half-bridge topology alternatives (Infineon PrimePACK and EconoDUAL equivalents), and practical DC-link design notes not found in the standalone manufacturer datasheet.
드롭인 대체품: FF450R12KT4HOSA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
FF400R12KT4HOSA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FF600R12KT4HOSA1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
DF400R12KE3HOSA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FF450R12KE3HOSA1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
CM450DX-24S
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BSM300GB120DLC
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
FF450R12KT4HOSA1 최대 정격 & 전기적 특성
| IGBT Technology | Trench Field Stop IGBT4 (TRENCHSTOP) |
| Configuration | Half-Bridge (Dual IGBT + antiparallel EC4 diode) |
| Collector-Emitter Voltage (VCE) | 1200 V |
| Continuous Collector Current (IC) @ TC=80°C | 450 A |
| Peak Collector Current (ICM, tp=1ms, TC=100°C) | 580 A |
| VCE(sat) typical (IC=450A, VGE=15V, TJ=25°C) | 1.75 V |
| Total Power Dissipation (PD) | 2400 W |
| Gate-Emitter Voltage (VGE) max | ±20 V |
| Short-Circuit Withstand Time (SCWT, VCC=720V, TJ=150°C) | 10 µs minimum |
| 동작 접합 온도 | -40°C to +150°C |
| Package Style | 62 mm C-series chassis-mount module |
| Pin/Terminal Count | 7 (power screw terminals + auxiliary signal pins) |
| Diode Type | Emitter Controlled 4 (EC4) fast-recovery |
| 실장 유형 | Chassis / screw mount with thermal interface |
| UL Certification | UL 1557 file E83336 |
| RoHS 상태 | Compliant |
FF450R12KT4HOSA1 핀 구성
| 핀 1 | DC+ — DC-link positive power terminal (screw lug) |
| 핀 2 | C2 (High-side collector) — High-side IGBT collector tied to DC+ |
| 핀 3 | E1/C1 (Phase U) — Low-side collector / high-side emitter - switched phase output |
| 핀 4 | DC- — DC-link negative power terminal |
| 핀 5 | G1 — Gate of low-side IGBT |
| 핀 6 | E1 — Auxiliary emitter of low-side IGBT |
| 핀 7 | G2/E2 — Gate and emitter of high-side IGBT (auxiliary pins) |
Reverse-Bias 안전 동작 영역 (RBSOA)
일반적인 애플리케이션
FF450R12KT4HOSA1 적합 용도: 6 애플리케이션s: Industrial AC Motor Drives (690V line), Solar Central Inverters (1000–1100V DC-link), Three-Phase UPS Systems, Industrial Welding Inverters, Active Front-End (AFE) Rectifiers, Wind Turbine Converters (DFIG and Full-Conversion).
Industrial AC Motor Drives (690V line)
The FF450R12KT4HOSA1 is one of the most widely deployed 62 mm C-series IGBT4 modules in industrial variable-frequency drives for 690 V AC line-fed three-phase motors in the 200-400 kW power range. Its 450 A continuous rating and 580 A peak handle motor inrush at start-up, while the 1200 V VCE margin supports the typical 1100 V DC-link in 690 V rectifier-fed drives with comfortable headroom for DC-bus transients and regenerative energy feedback. Compared with high-switching-frequency SiC alternatives, the FF450R12KT4HOSA1 trades off switching loss for conduction-loss optimization at a few kHz PWM frequencies typical in heavy-industry drives. Mount the module on a forced-air or liquid-cooled cold plate with adequate thermal interface material, and pair each module with a laminated low-inductance DC-link busbar to keep turn-off overshoot below 1200 V.
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Solar Central Inverters (1000–1100V DC-link)
The FF450R12KT4HOSA1's 1200 V VCE rating covers 1000 V and 1100 V DC-link solar central inverters, and its IGBT4 trench field-stop technology reduces switching loss versus earlier IGBT3 designs for central inverter switching frequencies of 3-8 kHz. In a typical three-level NPC or two-level topology, six modules form a complete three-phase inverter leg set capable of delivering 250 kW or more per stack. The 2400 W power dissipation rating per module simplifies thermal design in liquid-cooled central inverter platforms, and the EC4 freewheeling diode handles reverse recovery efficiently at unity-power-factor grid conditions. Pair this module with Infineon's EiceDriver 2ED020I12-F2 gate driver and the EicePERVAL 3-phase gate-driver board for a production-ready solar inverter building block.
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Three-Phase UPS Systems
The FF450R12KT4HOSA1 forms the inverter stage of online double-conversion three-phase UPS systems at the 100-300 kVA tier. Its 62 mm C-series mechanical format is the long-standing industry standard chassis for UPS inverter modules, allowing direct upgrade of installed bases with newer-generation IGBT4 silicon. The 10 µs short-circuit withstand time at 720 V VCC meets IEC 62040-3 UPS protection timing requirements, and the 150°C maximum junction temperature gives thermal headroom for overload conditions during battery discharge events. The TRENCHSTOP IGBT4 switching characteristics produce low EMI, important for UPS installations in hospital or data-center environments where conducted emissions limits are strict.
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Industrial Welding Inverters
Welding power sources demand very high peak currents (often 1000 A+ during arc strike) and the ability to handle DC-link short-circuit loads. The FF450R12KT4HOSA1 with its 580 A peak rating and short-circuit ruggedness fits mid-to-large MIG/MAG and TIG welding inverters using IGBT full-bridge or three-level topologies. The 62 mm C-series housing allows direct heatsink integration with the heavy baseplate typical of welding equipment, simplifying thermal management. Its 1.75 V VCE(sat) conduction loss also helps welding inverter efficiency, which directly impacts duty-cycle ratings on the nameplate.
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Active Front-End (AFE) Rectifiers
In active front-end rectifiers (regenerative drives, four-quadrant motor controls), the FF450R12KT4HOSA1 operates as a bidirectional switch between the DC-link and the line filter, replacing traditional diode bridges. The IGBT4 technology enables power-factor correction and regenerative braking energy recovery back into the AC line, with switching losses minimized at the few-kHz operating frequency typical of AFE stages. The 450 A continuous per module supports ~200 kW AFE ratings, and the positive temperature coefficient of VCE(sat) makes paralleling modules for larger AFE stages straightforward.
추천
Wind Turbine Converters (DFIG and Full-Conversion)
Large multi-megawatt wind turbine converters, both doubly-fed induction generator (DFIG) and full-conversion topologies, use 62 mm C-series IGBT4 modules like the FF450R12KT4HOSA1 at the generator-side inverter and grid-side converter positions. The 1200 V VCE rating suits the intermediate DC-link voltage in 3.3 kV / 6.6 kV transformer-fed converter topologies, and the 150°C maximum junction temperature gives the thermal margin needed for outdoor nacelle environments. The module's UL 1557 certification (file E83336) simplifies wind turbine certification in regions that require UL-listed components.
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추천 제품 요약
엔지니어링 참조 데이터: FF450R12KT4HOSA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | FF400R12KT4HOSA1 | FF600R12KT4HOSA1 | DF400R12KE3HOSA1 | FF450R12KE3HOSA1 | CM450DX-24S | BSM300GB120DLC |
|---|---|---|---|---|---|---|---|
| Package | 62 mm C-series half-bridge | 62 mm C-series half-bridge - same | 62 mm C-series half-bridge - same | 62 mm C-series EconoDUAL - same footprint | 62 mm C-series half-bridge - same | 62 mm C-series half-bridge (Mitsubishi outline) | 62 mm Half-Bridge - same mechanical outline |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Mitsubishi Electric | Infineon Technologies |
| Collector-Emitter Voltage (VCE) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Continuous Collector Current (IC @ TC=80°C) | 450 A | 400 A | 600 A | 400 A | 450 A | 450 A | 300 A |
| Peak Collector Current (1ms) | 580 A | 520 A | 780 A | 400 A | 580 A | 450 A | 300 A |
| IGBT Generation | IGBT4 (TRENCHSTOP) | IGBT4 (TRENCHSTOP) | IGBT4 (TRENCHSTOP) | IGBT3 (predecessor) | IGBT3 (predecessor) | Mitsubishi 5th-gen CSTBT | IGBT3 (legacy) |
| VCE(sat) typical at rated IC | 1.75 V | 1.75 V | 1.75 V | 2.00 V | 2.00 V | 1.70 V | 2.20 V |
| Total Power Dissipation (PD) | 2400 W | 2200 W | 3000 W | 2000 W | 2100 W | 2400 W | 1800 W |
주요 차별점
- Higher continuous current than the 400A alternative in the same 62 mm C-series housing (vs FF400R12KT4HOSA1)
- Modern IGBT4 trench field-stop technology vs IGBT3 predecessor (vs FF450R12KE3HOSA1)
- Infineon EC4 (Emitter Controlled 4) freewheeling diode (vs CM450DX-24S)
설계 노트
Estimated: with RthJC ≈ 0.062 K/W per IGBT switch and full-load dissipation of roughly 800 W (conduction + switching at 4 kHz), a single junction would rise approximately 50°C above the baseplate. Total module power dissipation of 2400 W under worst-case industrial-drive conditions requires a cold plate thermal resistance below 0.04 K/W (forced air or liquid cooling) to keep the junction below the 150°C absolute maximum. Apply TIM (or use the FF450R12KT4HOSA1-TIM variant with pre-applied thermal interface material) with bond-line thickness below 50 µm.
A laminated DC-link busbar with total loop inductance below 50 nH is required to keep turn-off voltage overshoot safely below the 1200 V VCE rating. Place the electrolytic or film DC-link capacitors as close to the module power terminals as physically possible (typically less than 50 mm), and use a full-bridge snubber only if the DC-link inductance cannot be reduced to the recommended level. Active gate-driving with di/dt control further limits dV/dt stress on the module and downstream motor insulation.
Do not exceed VGE of ±20 V under any condition including gate-driver fault transients; sustained over-voltage on the gate oxide is the most common cause of field failure. Verify that the short-circuit detection time of the gate-driver is set below 8 µs - shorter than the 10 µs SCWT rating - to protect the module under load-short conditions. Never reuse a module that has experienced a confirmed short-circuit event, as the silicon damage is cumulative even when the module still passes basic tests.
규정 준수 정보
UL 1557 certified (file E83336). RoHS compliant and lead-free per Infineon product page. Not AEC-Q100 qualified - this is an industrial / energy-grade part, not automotive.
