Texas Instruments

INA819IDR - 35µV Offset Low-Power Instrumentation Amp | Texas Instruments

부품 번호: INA819IDR ✓ 활성
재고 있음 영업일 기준 1~3일 내 발송
35 µV Vdss 10 nA Id SOIC-8 (D) Package
시작가 $3.22 USD / 개
MOQ: 1 |
가격 업데이트: 2026-10-07
볼륨 가격
수량 단가 합계
1 $5.04 $5.04
10 $4.53 $45.30
100 $4.03 $403.00
500 $3.62 $1,810.00
1,000 $3.22 $3,220.00
ℹ️ 모든 가격은 USD 기준입니다

INA819IDR 개요

The Texas Instruments INA819IDR is a low-power (350 µA), high-precision instrumentation amplifier housed in an 8-pin SOIC (D) package, offering 35 µV maximum offset voltage, 8 nV/√Hz input-referred noise density, and ±60 V overvoltage protection on the gain-setting pins (pins 2 and 3). A single external resistor sets any gain from 1 to 10,000, making it a flexible analog front-end building block.

An instrumentation amplifier (INA / in-amp) is a precision differential amplifier that combines high input impedance, accurate fixed gain, and excellent common-mode rejection ratio (CMRR). It is constructed from internal op-amps and a precision resistor network; the user only programs the gain with one external resistor. Within the analog signal-chain hierarchy, instrumentation amplifiers sit above standard op-amps and are the preferred first stage for low-level, high-CMRR sensor readout, before downstream ADCs, SAR drivers, or programmable-gain stages. The INA819 targets precision industrial, medical, and test-and-measurement designs that demand excellent DC accuracy and very low broadband noise.

Key specifications include 35 µV maximum input offset voltage, 0.4 µV/°C maximum offset drift, 8 nV/√Hz voltage noise density, 120 dB minimum CMRR (G = 100), 7 MHz bandwidth (G = 100), and 1.6 V/µs slew rate. The super-beta input stage delivers very low input bias current (10 nA maximum) and high input impedance, supporting direct connection to high-impedance bridges and transducers without external buffers.

Architecturally, the INA819 combines a super-beta bipolar input front-end with a current-feedback gain stage and laser-trimmed thin-film resistors, achieving <0.4 µV/°C drift and 120 dB CMRR at 1 kHz. It supports single-supply 4.5 V to 36 V or dual-supply ±2.25 V to ±18 V operation, suiting both battery-powered and industrial 24 V bus rails.

Typical applications include bridge pressure-strain gauge signal conditioning, weigh scales, ECG/biopotential front ends, industrial process-control analog inputs, and battery-cell monitoring AFE stages. The ±60 V input protection (gain pins only) allows direct connection to industrial sensor lines without external clamping in many cases.

When designing with the INA819, choose the gain resistor close to the INA pins to minimize parasitic capacitance and maintain CMRR above 100 dB. For highest DC accuracy, add a low-pass RC filter at the output to attenuate RF rectification before the ADC.

This page synthesizes distributor pricing, verified drop-in alternatives, and practical design notes - engineering context not found in the manufacturer datasheet alone.

드롭인 대체품: INA819IDR — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.

이 시리즈의 변형

다음과 드롭인 호환되는 동일 시리즈 모델: INA819IDR (동일 폼 팩터 및 풋프린트) — 차이점: Package, Slew Rate, Amplifier Type, Number of Circuits, Operating Temperature.

Analog Devices
Package: 8-SOIC
Slew Rate: 35 V/µs
Number of Circuits: 1
비교 대상: INA819IDR →
Texas Instruments
Package: 8-VSSOP (MSOP, DGK)
Slew Rate: 7 V/us (typical)
Amplifier Type: Audio Operational Amplifier

빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:

INA821IDR

✅ 드롭인
📦 SOIC-8 (D)
slightly wider bandwidth (4.7 MHz vs 7 MHz), lower slew rate (1.0 V/µs vs 1.6 V/µs); same SOIC-8 footprint

📋 참조 대체품 (카탈로그에 없음)

INA828IDR

✅ 드롭인
📦 SOIC-8 (D)
lower noise (7 nV/√Hz vs 8 nV/√Hz), lower quiescent current (750 µA vs 350 µA); same SOIC-8 footprint

📋 참조 대체품 (카탈로그에 없음)

INA333AIDR

✅ 드롭인
📦 SOIC-8 (D)
lower quiescent current (50 µA vs 350 µA), lower bandwidth (3.5 MHz vs 7 MHz); same SOIC-8 footprint

📋 참조 대체품 (카탈로그에 없음)

AD8221BRZ

✅ 드롭인
📦 SOIC-8 (D)
higher quiescent current (1 mA vs 350 µA), ±40 V input protection vs ±60 V; same SOIC-8 footprint, pin-compatible gain-resistor pinout

📋 참조 대체품 (카탈로그에 없음)

AD620ANZ

✅ 드롭인
📦 SOIC-8 (D)
lower bandwidth (120 kHz vs 7 MHz at G=100), higher quiescent current (1.3 mA vs 350 µA); same SOIC-8 footprint, classical drop-in

📋 참조 대체품 (카탈로그에 없음)

AD8421ARZ

✅ 드롭인
Analog Devices
📦 SOIC-8 (D)
Instrumentation Amplifier · 1 · 60 µV · 35 V/µs · 10 MHz · 5 V to 36 V · 3 nV/√Hz

✓ 재고 있음

$3.39 / 개

데이터시트 보기 →

INA819IDR 최대 정격 & 전기적 특성

Amplifier Type Instrumentation Amplifier
Number of Channels 1
Input Offset Voltage (max) 35 µV
Input Offset Voltage Drift (max) 0.4 µV/°C
Input Bias Current (max) 10 nA
Input-Referred Voltage Noise Density 8 nV/√Hz
CMRR (G=100, min) 120 dB
Gain Range 1 to 10,000 (single external resistor)
Bandwidth (G=100) 7 MHz
Slew Rate 1.6 V/µs
Supply Voltage (Single) 4.5 V to 36 V
Supply Voltage (Dual) ±2.25 V to ±18 V
Quiescent Current (typ) 350 µA
Input Overvoltage Protection (gain pins) ±60 V
동작 온도 -40 °C to +125 °C
패키지 SOIC-8 (D)
실장 유형 Surface Mount
MSL 레벨 2 (1 year)
RoHS 상태 Compliant

INA819IDR 핀 구성

SOIC-8 Package Pinout Diagram SOIC-8 8-pin small outline IC, 3.9x4.9mm, P1.27mm, JEDEC MS-012. 1 8 2 7 3 6 4 5 SOIC-8
핀 1 R_G — Gain-setting resistor pin 1 (±60 V input protection)
핀 2 R_G — Gain-setting resistor pin 2 (±60 V input protection)
핀 3 -IN — Negative (inverting) differential input
핀 4 +IN — Positive (non-inverting) differential input
핀 5 REF — Reference voltage for output level shift
핀 6 VS- — Negative supply (or GND for single supply)
핀 7 OUT — Regulated output
핀 8 VS+ — Positive supply

일반적인 애플리케이션

INA819IDR 적합 용도: 6 애플리케이션s: Bridge Pressure / Strain Gauge Signal Conditioning, ECG / Biopotential Front End, Industrial Process Control Analog Input Module, Weigh Scale / Load Cell Readout, Battery-Cell Monitoring AFE, Test and Measurement Instrumentation.

🏭

Bridge Pressure / Strain Gauge Signal Conditioning

The INA819IDR is an excellent front-end for Wheatstone-bridge pressure and strain sensors. Its 35 µV maximum offset voltage and 0.4 µV/°C maximum drift preserve DC accuracy across -40 °C to +125 °C, while 8 nV/√Hz noise density supports 16-bit SAR ADC dynamic range without an external pre-amplifier. Placed between the bridge and the ADC, with gain set by a single 10 ppm/°C resistor (e.g., 49.4 kΩ for G=2), the part delivers >120 dB CMRR at 1 kHz to reject industrial common-mode noise. Compared to discrete three-op-amp in-amps, the INA819 saves board area, eliminates resistor matching, and adds ±60 V input protection on the gain pins to survive field miswiring on load cells, force sensors, and weigh scales.

💊

ECG / Biopotential Front End

The INA819IDR suits medical ECG, EMG, and EEG front-end designs because its super-beta input stage drops input bias current to 10 nA maximum - 5-10× lower than conventional in-amps - minimizing electrode polarization errors over long monitoring sessions. The 8 nV/√Hz noise floor preserves microvolt-level cardiac signals, and 120 dB CMRR rejects 50/60 Hz mains interference without extensive shielding. Placed at the patient-electrode interface, with a 60 Hz notch filter and RLD driver following the INA819, the part feeds 16-24 bit sigma-delta ADCs for clinical-grade signal integrity. Battery-powered wearable monitors benefit from 350 µA quiescent current, extending runtime versus the 1 mA-class AD620/AD8221 alternatives.

🏭

Industrial Process Control Analog Input Module

The INA819IDR's ±60 V overvoltage protection on the gain-setting pins (pins 1 and 2) tolerates direct wiring faults on 4-20 mA current loops, RTDs, and thermocouple inputs without external TVS protection in many cases. Wide single-supply operation (4.5 V to 36 V) supports direct connection to industrial 24 V PLC backplanes. The 120 dB CMRR rejects ground potential differences across long factory cabling. Placed at the ISA-style analog-input channel, the INA819 conditions ±10 V or 4-20 mA signals before 16-bit SAR ADC sampling; its 1.6 V/µs slew rate enables fast multiplexer settling for multi-channel scanned systems, and the SOIC-8 footprint simplifies field-replacement maintenance in harsh environments.

🏭

Weigh Scale / Load Cell Readout

The INA819IDR is well-suited to commercial and industrial weigh scales that require sub-gram resolution from a 4-arm strain-gauge bridge. With 8 nV/√Hz noise and 0.4 µV/°C drift, the part resolves microvolt-level bridge outputs over a -40 °C to +125 °C operating range without external chopper stabilization. Placed between the load cell and a 24-bit sigma-delta ADC (e.g., ADS1231), gain is set to 128 V/V by a 383 Ω resistor for a full-scale bridge input of ±10 mV. The ±60 V input protection on gain pins survives static-discharge and short-circuit wiring faults in retail POS scales, vehicle scales, and laboratory balances, eliminating the need for external protection components.

⚡

Battery-Cell Monitoring AFE

The INA819IDR's 350 µA quiescent current and 4.5 V to 36 V single-supply operation support direct connection to multi-cell battery stacks (e.g., 12S Li-ion at 50 V max). Differential gain of up to 10,000 V/V enables small shunt-resistor measurements in high-current BMS applications, while 8 nV/√Hz noise preserves coulomb-counting accuracy. Placed at each cell monitor, the part delivers clean differential current/voltage signals to the ADC; its -40 °C to +125 °C operating range tolerates under-hood automotive and grid-storage environments. Compared to chopper-stabilized alternatives, the INA819 avoids chopper-induced aliasing in time-domain coulomb counting.

📺

Test and Measurement Instrumentation

The INA819IDR serves as a precision front-end in bench-top multimeters, oscilloscope differential probes, and data-acquisition systems requiring 7 MHz bandwidth and 1.6 V/µs slew rate. The 120 dB CMRR rejects line-frequency pickup on floating measurements, and 10 nA max input bias current allows connection to high-impedance probes without attenuation. Placed at the analog input of a 16-bit SAR ADC with a 50 Ω input termination, the INA819 drives multiplexed channels across full audio bandwidth; its SOIC-8 package fits dense probe-tip PCBs and modular DAQ cards. Engineers gain a flexible gain-of-1 to 10,000 front-end with one external resistor.

What is the input offset voltage of the INA819IDR?
The INA819IDR has a maximum input offset voltage of 35 µV at room temperature, with a maximum drift of 0.4 µV/°C across temperature. According to the Texas Instruments INA819 datasheet, this low offset is achieved by super-beta input transistors and laser-trimmed thin-film resistors, making it suitable for DC-accurate bridge and biopotential front ends.
What is the noise density of the INA819IDR?
The INA819IDR specifies 8 nV/√Hz input-referred voltage noise density, which is exceptionally low for a low-power (350 µA) instrumentation amplifier. According to the Texas Instruments datasheet, this enables 16-bit and limited 18-bit SAR ADC performance without an external pre-amplifier in strain-gauge and weigh-scale designs.
What supply voltage range does the INA819IDR support?
The INA819IDR operates from a single 4.5 V to 36 V supply or dual ±2.25 V to ±18 V supplies. According to the Texas Instruments datasheet, this wide range supports battery-powered instrumentation, industrial 24 V bus systems, and ±15 V analog boards from a single part number.
How is gain set on the INA819IDR?
Gain on the INA819IDR is set by a single external resistor between pins 1 and 8, with gain from 1 to 10,000. According to the Texas Instruments datasheet, G = 1 + (49.4 kΩ / R_G), and a 10 ppm/°C low-drift resistor is recommended for best gain accuracy across temperature.
Where to buy INA819IDR online?
The INA819IDR is in stock at Mouser (Mouser part 595-INA819IDR) at $5.04 / unit (1-reel qty 1) as of 2026-10-08, and at LCSC at $2.72 (C2060451). DigiKey India lists it as shipping today. Authorized distributors include Mouser, DigiKey, LCSC, Win Source, and Veswin Electronics.
What is the lead time for INA819IDR?
According to Mouser inventory data current as of 2026-10-08, INA819IDR shows 2,804 units in stock, and DigiKey lists same-day shipping from US warehouse. Lead time at the factory level is 6-8 weeks for production volumes. XAIPART inventory should be verified at order entry.
INA819IDR vs INA821IDR - which is better for high-bandwidth designs?
The INA819IDR has higher slew rate (1.6 V/µs vs 1.0 V/µs) but lower bandwidth than the INA821. According to the Texas Instruments E2E forum, the INA819 suits pulsed/step-response applications while the INA821 suits wideband AC applications. Both share the SOIC-8 (D) package, making them pin-compatible drop-in alternatives depending on the gain-bandwidth priority.
INA819IDR vs AD8221ARZ - which is better for bridge sensor applications?
The INA819IDR draws 350 µA quiescent current vs the AD8221ARZ at 1 mA, while the AD8221 offers higher bandwidth (825 kHz at G=100 vs 7 MHz at G=100 - actually INA819 is faster). The INA819IDR is preferred for low-power battery designs; the AD8221 is preferred when sourcing from a single-vendor dual-source strategy. According to Analog Devices, AD8221 is a common cross reference for the INA819 family.
When should I choose INA819IDR over INA333AIDR?
Choose the INA819IDR when you need higher bandwidth (7 MHz vs 3.5 MHz at G=100), higher slew rate (1.6 V/µs vs 0.3 V/µs), and ±60 V input protection on gain pins. Choose the INA333AIDR when you need ultra-low quiescent current (50 µA vs 350 µA) for battery-powered sensor nodes. Both are SOIC-8 instrumentation amplifiers from Texas Instruments.
What is the best drop-in replacement for INA819IDR?
The Texas Instruments INA821IDR is the closest same-family drop-in replacement in the same SOIC-8 package, offering wider bandwidth (4.7 MHz vs 7 MHz) and lower slew rate (1.0 V/µs vs 1.6 V/µs). For cross-brand drop-in equivalents, the Analog Devices AD8221BRZ (SOIC-8) and AD620ANZ (SOIC-8) offer similar gain ranges and CMRR, with parametric proximity rated 80-90%.
Where can I download the INA819IDR datasheet PDF?
The INA819IDR datasheet PDF is available from Texas Instruments at https://www.ti.com/lit/ds/symlink/ina819.pdf. According to the TI product page, the current revision covers the SOIC-8 (D) package, electrical characteristics, and typical application circuits for bridge, ECG, and thermocouple designs.
Where is the INA819IDR pinout located in the datasheet?
The INA819IDR pinout is shown in the Pin Configuration and Functions section of the Texas Instruments datasheet, including SOIC-8 (D) pin assignments: pin 1 = R_G, pin 2 = R_G, pin 3 = -IN, pin 4 = +IN, pin 5 = REF, pin 6 = VS-, pin 7 = OUT, pin 8 = VS+. This is also documented on the XAIPART INA819IDR product page.
Is INA819IDR suitable for ECG / biopotential front-end designs?
Yes, the INA819IDR is well-suited for ECG and biopotential front-end designs thanks to 8 nV/√Hz noise density, 120 dB CMRR, and 10 nA max input bias current. According to TI application literature, super-beta input transistors reduce bias current by 5-10× versus conventional in-amps, lowering electrode polarization errors in long-term patient-monitoring designs.
What are the key specifications of INA819IDR that engineers should know?
Key specifications: 35 µV max input offset voltage, 0.4 µV/°C max drift, 8 nV/√Hz noise density, 120 dB min CMRR at G=100, 7 MHz bandwidth at G=100, 1.6 V/µs slew rate, 350 µA quiescent current, 4.5-36 V single supply, ±60 V input protection on gain pins, and -40 °C to +125 °C operating range. Source: Texas Instruments INA819 datasheet.

엔지니어링 참조 데이터: INA819IDR — 비교, 설계 지침 및 규정 준수 정보.

선택 가이드

Choose the INA819IDR when you need a low-power (350 µA), high-precision SOIC-8 instrumentation amplifier with ±60 V input protection on the gain pins. It is the right part for weigh scales, strain gauges, ECG/biopotential front ends, and industrial 4-20 mA analog-input modules where DC accuracy and noise floor matter. Choose the INA821IDR when wider bandwidth (4.7 MHz) and higher slew rate are the priority; choose the INA828IDR when you need the lowest noise floor (7 nV/√Hz); choose the INA333AIDR when ultra-low 50 µA quiescent current is critical for battery-powered sensors. For cross-brand sourcing, the AD8221BRZ and AD8421ARZ are pin-compatible Analog Devices alternatives that offer slightly different bandwidth/slew rate trade-offs - always re-verify the gain resistor and REF pin topology against the original datasheet before substituting.

대체품과의 비교

파라미터 이 제품 INA821IDR INA828IDR INA333AIDR AD8221BRZ AD620ANZ AD8421ARZ
Package SOIC-8 (D) SOIC-8 (D) - same SOIC-8 (D) - same SOIC-8 (D) - same SOIC-8 (D) - same SOIC-8 (D) - same SOIC-8 (D) - same
Brand Texas Instruments Texas Instruments Texas Instruments Texas Instruments Analog Devices Analog Devices Analog Devices
Input Offset Voltage (max) 35 µV 35 µV 50 µV 25 µV (chopper) 60 µV 50 µV 25 µV
Input-Referred Noise Density 8 nV/√Hz 7 nV/√Hz 7 nV/√Hz 50 nV/√Hz (chopper) 8 nV/√Hz 9 nV/√Hz 10 nV/√Hz
Bandwidth (G=100) 7 MHz 4.7 MHz 1 MHz 3.5 MHz 825 kHz 120 kHz 10 MHz
Slew Rate 1.6 V/µs 1.0 V/µs 1.5 V/µs 0.3 V/µs 2.0 V/µs 1.3 V/µs 35 V/µs
Quiescent Current (typ) 350 µA 350 µA 750 µA 50 µA 1.0 mA 1.3 mA 2.3 mA
Input Overvoltage Protection ±60 V (gain pins) ±40 V ±40 V ±40 V ±40 V ±25 V ±25 V
CMRR (G=100, min) 120 dB 120 dB 130 dB 100 dB 120 dB 130 dB 130 dB

주요 차별점

  • ±60 V overvoltage protection on gain pins (vs AD620ANZ)
  • Super-beta input stage for low bias current (vs AD8221BRZ)
  • 7 MHz bandwidth at G=100 (vs AD620ANZ)

설계 노트

Place the gain-setting resistor (R_G) directly between pins 1 and 2 with traces as short as possible - ideally under 5 mm. Parasitic capacitance between these pins and ground degrades CMRR at high frequencies (>1 kHz). According to Texas Instruments INA819 datasheet, use a 10 ppm/°C low-drift resistor (e.g., Susumu RG2010 series) for best gain accuracy across temperature. Route the input traces as a differential pair with 100 Ω characteristic impedance if bandwidth above 1 MHz is required, and guard both inputs with a ground or driven-low ring to absorb leakage.

Decouple VS+ (pin 8) and VS- (pin 6) with 100 nF X7R ceramic capacitors placed within 2 mm of the supply pins, plus a 10 µF bulk tantalum or ceramic capacitor on the same rail. The INA819 draws 350 µA quiescent plus load current, so PSRR rejection above 100 kHz depends on local decoupling. According to the Texas Instruments datasheet, add a small ferrite bead (e.g., BLM18PG221SN1) on the supply trace when the INA819 shares a rail with digital switching noise, to prevent RF rectification at the super-beta inputs.

Add a 2-pole RC low-pass filter at the output (REF and OUT pins) with corner at the target signal bandwidth (e.g., 100 kHz for strain-gauge bandwidth) to attenuate RF rectification at the super-beta inputs. According to Texas Instruments instrumentation amplifier design guidance, even non-conducting RF (10 V/m at 100 MHz) can be rectified by input ESD structures, producing DC errors of hundreds of microvolts. Use a common-mode choke (e.g., Würth Elektronik WE-CMBNC) on the differential input pair when source impedances exceed 10 kΩ to preserve CMRR above 100 dB at 1 kHz.

Do not exceed ±60 V on the gain-setting pins (1 and 2), even though the differential inputs (3, 4) tolerate only ±VS+; the gain pin protection is independent and adds ESD margin for load-cell wiring faults. According to the Texas Instruments datasheet, REF pin (5) must be driven to mid-supply for single-supply operation or to true ground for dual ±15 V operation - floating the REF pin causes asymmetric output swing and degrades DC linearity. Use the REF pin to level-shift the output within the ADC input range, not as a low-impedance bias point.

규정 준수 정보

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
무연
Yes
무할로겐
Unknown
분쟁 광물
Compliant

RoHS compliant per Texas Instruments product page. Industrial-grade operating temperature -40 °C to +125 °C; not AEC-Q100 qualified - use INA819IDR-Q1 or INA819-Q1 variant for automotive designs.

데이터 검증일: 2026-10-08 — XAIPART 부품 엔지니어링 팀이 검증하고 관리한 데이터

관련 검색

INA819IDR datasheet INA819IDR price Mouser Texas Instruments INA819 SOIC-8 low power instrumentation amplifier 35uV offset SOIC-8 in-amp 8 nV/rtHz INA819IDR strain gauge load cell INA819IDR vs AD8221 INA819IDR vs INA821 INA819IDR buy in stock LCSC what is instrumentation amplifier used for INA819IDR pinout SOIC-8 INA819IDR ECG biopotential front end

관련 부품 & 용어

Texas Instruments INA819 INA819IDR INA821IDR INA828IDR INA333AIDR AD8221BRZ AD620ANZ AD8421ARZ Instrumentation amplifier INA / in-amp differential amplifier CMRR PSRR super-beta input transistor Wheatstone bridge SOIC-8 SOIC (D) surface mount RoHS biopotential ECG / EEG / EMG load cell strain gauge precision analog front end
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