MAX15024AATB/V+T - 8A Single Low-Side MOSFET Driver | Analog Devices
부품 번호: MAX15024AATB/V+T ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $4.95 | $4.95 |
| 10 | $4.45 | $44.50 |
| 100 | $3.96 | $396.00 |
| 500 | $3.57 | $1,785.00 |
| 1,000 | $3.18 | $3,180.00 |
MAX15024AATB/V+T 개요
A gate driver is a power-management IC that sits between a low-power control signal (from a microcontroller, FPGA, or analog controller) and the gate of a discrete power switch (typically a MOSFET or IGBT). Because microcontrollers cannot source or sink the multi-ampere currents required to charge and discharge a power MOSFET's gate quickly, the gate driver acts as a high-current buffer. Within the broader IC hierarchy, the MAX15024 belongs to the PMIC (Power Management IC) category, specifically the MOSFET/IGBT gate driver sub-family, often called power MOSFET drivers or low-side drivers. Its role is essential in any switched-power topology where switching losses, dead-time control, and dv/dt immunity matter.
Key features include 4.5 V to 28 V supply range (VDD), 8 A peak sink/source current, internal source-and-sink output transistors with independent source and sink pins for rise/fall-time control, 16 ns typical propagation delay, inverting and non-inverting logic inputs, TTL/CMOS-compatible inputs, and a -40 C to +125 C automotive-grade operating temperature range (the /V suffix denotes the automotive-qualified version).
The architecture uses a BiCMOS push-pull output stage with separate SOURCE and SINK pins that connect to the gate via small gate resistors, allowing the designer to tune rise and fall times independently. This dual-path topology reduces switching losses and EMI by controlling the trade-off between dv/dt, ringing, and cross-conduction. The internal logic accepts inverting or non-inverting inputs selected via a single pin, eliminating the need for an external inverter stage.
Typical applications include synchronous-rectifier MOSFET driving in isolated DC-DC converters, low-side drive for buck and half-bridge topologies, motor-driver pre-drivers, Class-D audio amplifier output stages, and high-frequency switch-mode power supplies (SMPS) where fast edges minimize switching loss.
When designing with this part, place the TDFN exposed pad over a continuous ground copper pour to dissipate the internal switching losses, and keep the gate-loop return path tight (gate resistor -> driver -> source -> back to ground) to limit parasitic inductance.
This page synthesizes distributor pricing as of 2026-10-09, drop-in automotive-grade alternatives, package-aware comparison data, and practical PCB-layout design notes not collected in the manufacturer datasheet alone.
드롭인 대체품: MAX15024AATB/V+T — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MAX15024AATB/V+T (동일 폼 팩터 및 풋프린트) — 차이점: Input Logic Compatibility, Package.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MAX15024AATB+T
✅ 드롭인✓ 재고 있음
$1.94 / 개
데이터시트 보기 →MAX15024BATB+T
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MAX15024CATB+T
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MAX15024DATB+T
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MAX15024AATB/V+T
✅ 드롭인✓ 재고 있음
$3.18 / 개
데이터시트 보기 →MAX15024AATB/V+T 최대 정격 & 전기적 특성
| 기능 | Low-Side Gate Driver |
| Driver Configuration | Single, Inverting and Non-Inverting |
| Number of Drivers | 1 |
| Supply Voltage (VDD) | 4.5 V to 28 V |
| Peak Output Current (Sink/Source) | 8 A |
| Propagation Delay (Typ.) | 16 ns |
| Maximum Switching Frequency | 1 MHz |
| Input Logic Compatibility | TTL / CMOS |
| Rise/Fall Time Control | Independent SOURCE and SINK output pins |
| 동작 온도 범위 | -40 C to +125 C |
| 패키지 | 10-TDFN (3x3 mm) Exposed Pad |
| 실장 유형 | Surface Mount |
| Automotive Qualified (/V) | Yes |
| RoHS 상태 | Compliant |
MAX15024AATB/V+T 핀 구성
| 핀 1 | IN+ — Non-inverting TTL/CMOS input |
| 핀 2 | IN- — Inverting TTL/CMOS input / polarity select |
| 핀 3 | GND — Ground |
| 핀 4 | SOURCE — Source output (pull-up to gate) - connect via gate resistor |
| 핀 5 | SINK — Sink output (pull-down to gate) - connect via gate resistor |
| 핀 6 | VDD — Supply voltage (4.5 V to 28 V) |
| 핀 7 | NC — Not connected (per datasheet) |
| 핀 8 | NC — Not connected (per datasheet) |
| 핀 9 | NC — Not connected (per datasheet) |
| 핀 10 | NC — Not connected (per datasheet) |
일반적인 애플리케이션
MAX15024AATB/V+T 적합 용도: 6 애플리케이션s: Synchronous Rectifier for Isolated DC-DC Converters, Low-Side Drive in Buck and Half-Bridge SMPS, Class-D Audio Amplifier Output Stage, Motor Driver Pre-Driver for BLDC and Stepper Stages, Power-Supply Module Primary-Side Drive, Automotive 12 V/24 V Load Switch Drivers.
Synchronous Rectifier for Isolated DC-DC Converters
The MAX15024AATB/V+T drives the secondary-side synchronous-rectifier MOSFETs in isolated flyback, forward, and half-bridge DC-DC converters where the 8 A peak current and 16 ns propagation delay let designers eliminate body-diode conduction without oversizing the gate resistor. The independent SOURCE and SINK pins connect to two small external gate resistors, letting the engineer trade off dv/dt (for EMI compliance) against switching loss (for efficiency) on a per-channel basis. Compared to a discrete push-pull BJT driver the MAX15024 saves PCB area and removes cross-conduction risk via tightly matched internal timing. Typical input-to-output propagation skew is below 5 ns across temperature, ensuring symmetric dead-time in a pair of synchronous FETs.
추천
Low-Side Drive in Buck and Half-Bridge SMPS
In buck and half-bridge switch-mode power supplies the MAX15024AATB/V+T drives the low-side MOSFET directly from a PWM controller's logic-level output, delivering the multi-ampere gate charge current that microcontrollers and small PWM controllers cannot supply. The 4.5 V to 28 V supply range covers 5 V, 12 V, and 24 V bus rails, allowing the same driver to be reused across product variants. The 1 MHz switching capability enables high-frequency designs where smaller magnetics reduce total BOM. Independent rise/fall-time control via SOURCE/SINK pins reduces ringing on the switching node, addressing EMI compliance for CISPR 22 / FCC Part 15 emission limits.
추천
Class-D Audio Amplifier Output Stage
Class-D audio amplifiers require MOSFET gate drivers with very short propagation delay so dead-time stays below audible thresholds (< 20 ns) and crossover distortion is minimized. The MAX15024AATB/V+T's 16 ns propagation delay easily meets this requirement while its 8 A peak current drives typical audio-grade MOSFETs (such as IRF6645 or BSC0901NS) at switching frequencies up to 500 kHz. The independent SOURCE/SINK pins let the audio designer soften the gate edge to manage EMI without sacrificing audio-band THD performance. The exposed-pad TDFN package provides excellent thermal dissipation for the continuous switching losses typical of audio duty cycles.
추천
Motor Driver Pre-Driver for BLDC and Stepper Stages
Brushless DC (BLDC) and stepper motor drives use the MAX15024AATB/V+T as a pre-driver for the low-side FETs of a three-phase inverter, providing the high peak gate current needed for fast switching at 20 kHz to 100 kHz PWM frequencies. The automotive-grade /V variant is qualified for under-the-hood motor control in electric-vehicle auxiliaries such as pumps and fans. The 8 A peak current supports direct drive of large FETs without an additional booster stage, reducing BOM count and PCB area. The -40 C to +125 C operating range handles automotive under-hood thermal extremes without derating.
추천
Power-Supply Module Primary-Side Drive
Brick-style power modules and intermediate bus converters use the MAX15024AATB/V+T as a primary-side low-side driver for the main power MOSFET, where the 28 V VDD rating easily accepts 12 V and 24 V input rails. The TTL/CMOS-compatible inputs interface directly with primary-side PWM controllers, eliminating the need for level-shifting circuitry. The exposed pad provides a low thermal-impedance path to the module's copper heat-spreader, enabling continuous operation at full 8 A peak drive without thermal shutdown. Designers can run the part at the full 1 MHz rating to shrink magnetics in compact brick designs.
추천
Automotive 12 V/24 V Load Switch Drivers
The /V suffix on the MAX15024AATB/V+T denotes AEC-Q100 automotive qualification, making this part the preferred choice for driving high-side or low-side load-switch MOSFETs in 12 V and 24 V automotive body-electronics modules. The 8 A peak current handles large FETs used for switched battery feeds, LED drivers, and accessory relays. The wide 4.5 V to 28 V VDD tolerance survives cold-crank transients and load-dump events when paired with a TVS clamp. Independent SOURCE/SINK pin control is useful for EMI compliance in noise-sensitive automotive audio and infotainment rails.
추천
추천 제품 요약
엔지니어링 참조 데이터: MAX15024AATB/V+T — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MAX15024AATB+T | MAX15024BATB+T | MAX15024CATB+T | MAX15024DATB+T |
|---|---|---|---|---|---|
| Brand | Analog Devices | Analog Devices | Analog Devices | Analog Devices | Analog Devices |
| Package | 10-TDFN (3x3 mm) | 10-TDFN (3x3 mm) - same | 10-TDFN (3x3 mm) - same | 10-TDFN (3x3 mm) - same | 10-TDFN (3x3 mm) - same |
| Peak Output Current | 8 A | 8 A | 8 A | 8 A | 8 A |
| Supply Voltage (VDD) | 4.5 V to 28 V | 4.5 V to 28 V | 4.5 V to 28 V | 4.5 V to 28 V | 4.5 V to 28 V |
| Maximum Switching Frequency | 1 MHz | 1 MHz | 1 MHz | 1 MHz | 1 MHz |
| Automotive Grade (/V) | Yes (AEC-Q100) | No | No | No | No |
| Operating Temperature Range | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C |
주요 차별점
- Independent SOURCE/SINK pins for per-edge tuning (vs MAX15027)
- Automotive-grade screening in same footprint (vs MAX15024AATB+T)
- 8 A peak current in compact 10-TDFN (vs MAX15025 (dual channel))
설계 노트
Estimated: at continuous 200 kHz switching into a 50 nC gate charge (Qg), the MAX15024 dissipates roughly Pdrv = Qg * VDD * fsw = 50 nC * 12 V * 200 kHz = 0.12 W, plus dynamic shoot-through losses. The 10-TDFN (3x3 mm) exposed pad has theta_JA in the 40 C/W range on a standard JEDEC 4-layer board. Solder the exposed pad to a continuous ground copper pour of at least 25 mm^2 to keep the junction below 125 C at 25 C ambient. Industrial designs seldom need extra heatsinking, but high-duty-cycle automotive applications should verify with a thermocouple measurement.
Keep the gate-loop return path tight: place the gate resistor within 5 mm of the SOURCE/SINK pins, route the return directly to the driver's GND pin, and avoid sharing the gate-return path with the power ground current of the MOSFET. Use a star-ground topology tying driver GND, source-sense GND, and VDD bypass GND at a single point. Place a 1 uF X7R ceramic bypass capacitor within 2 mm of the VDD pin, paralleled by a 0.1 uF NP0/C0G capacitor for high-frequency decoupling.
Do not exceed 28 V on VDD - automotive load-dump transients above 32 V will damage the part; add a TVS clamp (e.g. SMAJ28CA) for 12 V automotive buses. Do not leave the SOURCE/SINK pins floating - the datasheet requires external gate resistors on both pins to limit peak current and control edge rates. Do not drive the inputs above VDD or below GND; if the upstream controller runs at a different voltage, use a level shifter. Finally, respect the 16 ns propagation delay when computing dead-time in synchronous-rectifier loops to avoid shoot-through.
규정 준수 정보
The /V suffix denotes AEC-Q100 automotive qualification. RoHS and REACH compliance confirmed via distributor listings. The standard MAX15024AATB+T variant is not AEC-Q100 qualified - choose the /V variant for automotive designs.
