MBRS360T3G - 3A 60V Schottky Rectifier SMC | onsemi
부품 번호: MBRS360T3G ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.65 | $0.65 |
| 10 | $0.52 | $5.20 |
| 100 | $0.36 | $36.00 |
| 500 | $0.24 | $120.00 |
| 1,000 | $0.18 | $180.00 |
MBRS360T3G 개요
A Schottky diode is a unipolar semiconductor rectifier whose conduction is governed by the Schottky barrier formed at a metal-semiconductor junction rather than by a P-N junction. Because no minority-carrier recombination occurs during switching, the device exhibits near-zero reverse recovery time, making it ideal for high-frequency switch-mode power supplies (SMPS), DC-DC converters, freewheeling paths, and reverse-polarity protection. The MBRS360T3G belongs to the discrete semiconductor family: Schottky rectifier -> rectifier diode -> discrete semiconductor -> power component. Its sub-1 V forward drop at rated current and absence of reverse-recovery charge deliver high efficiency that P-N junction rectifiers cannot match at the same voltage class.
Key features include a 60 V maximum repetitive peak reverse voltage (VRRM), 3 A average rectified forward current (IF(AV)) at TL = 110 °C, low forward voltage drop of approximately 0.62 V at 3 A, guard ring construction for stress protection, and an epitaxial oxide-passivated junction that withstands reverse avalanche energy transients. The SMC package provides excellent thermal performance (low thermal resistance) and mechanical strength suitable for automated pick-and-place assembly.
In freewheeling and OR-ing applications the MBRS360T3G operates at switching frequencies from tens of kilohertz to several hundred kilohertz with negligible switching loss. The guard ring structure suppresses leakage current and improves avalanche robustness, while the oxide passivation prevents long-term degradation under thermal cycling.
Typical applications include switch-mode power supply (SMPS) output rectifiers, freewheeling diodes in DC-DC converters and motor drives, low-voltage polarity-protection circuits, OR-ing diodes in redundant power architectures, and reverse-battery protection in automotive and industrial modules. Designers often choose it where switching frequency exceeds 100 kHz and where the converter demands the lowest possible rectification loss.
When designing with this device, ensure the case temperature stays below the maximum rating (typically 150 °C) by calculating conduction loss: P = IF × VF. The J-lead SMC footprint offers strong solder-joint reliability but requires a properly sized copper pad to maintain thermal performance. Always observe the maximum reverse voltage derating of 80 % in continuous DC operation for reliability margin.
This page consolidates distributor pricing, drop-in alternatives, and engineering design notes that complement the onsemi datasheet, giving procurement and design engineers a single reference for evaluation.
드롭인 대체품: MBRS360T3G — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MBRS360BT3G
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
NRVBS360T3G
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
NRVBS360BNT3G
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SS36-E3/57T
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
STPS3L60S
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
B360-13-F
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MBRS360T3G 최대 정격 & 전기적 특성
| Diode Type | Schottky Power Rectifier |
| Configuration | Single |
| Average Rectified Forward Current (IF(AV)) | 3 A |
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 60 V |
| Maximum DC Blocking Voltage (VR) | 60 V |
| Forward Voltage (VF) at IF = 3 A | 0.74 V max (typical 0.62 V) |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 80 A (8.3 ms half-sine, per datasheet) |
| Reverse Recovery Time (trr) | Negligible (Schottky) |
| 동작 접합 온도 범위 | -55 °C to +150 °C |
| Storage Temperature Range | -55 °C to +150 °C |
| 패키지 | SMC (DO-214AB) J-Lead |
| 실장 유형 | Surface Mount |
| MSL 레벨 | 1 (per JEDEC J-STD-020) |
| Lead Finish | Matte Tin (Pb-free) |
| RoHS 상태 | Compliant |
| Construction | Epitaxial with oxide passivation and metal overlay contact |
MBRS360T3G 핀 구성
| 핀 1 | Cathode (K) — Cathode terminal (marked with band); also serves as main heatsink connection via the SMC tab |
| 핀 2 | Anode (A) — Anode terminal; current enters here during forward conduction |
일반적인 애플리케이션
MBRS360T3G 적합 용도: 6 애플리케이션s: Switch-Mode Power Supply (SMPS) Output Rectifier, Freewheeling Diode in DC-DC Converters, Reverse-Polarity / Battery Protection, OR-ing Diode in Redundant Power Architectures, Low-Voltage Motor Drive Clamping, High-Frequency Rectification in RF and Telecom.
Switch-Mode Power Supply (SMPS) Output Rectifier
The MBRS360T3G fits SMPS output rectification because its 60 V VRRM comfortably exceeds 24 V and 48 V telecom/datacom bus voltages with derating headroom, while its 0.62 V typical forward drop at 3 A minimizes conduction loss versus standard P-N rectifiers. Per the onsemi MBRS360T3-D datasheet, the device is ideally suited for low-voltage, high-frequency rectification in surface-mount converters. Its negligible reverse-recovery time eliminates switching loss at the 100-500 kHz switching frequencies typical of modern isolated DC-DC converters. In a 12 V / 3 A output stage the diode drops only about 0.62 W per ampere compared with 1.0-1.2 V for ultrafast rectifiers, raising overall converter efficiency by 2-4 %. Design the SMC cathode pad with at least 100 mm² of copper to dissipate the conduction loss.
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Freewheeling Diode in DC-DC Converters
Freewheeling across the synchronous-rectifier body diode is the most demanding use case for a Schottky rectifier, and the MBRS360T3G is rated exactly for this role. With a 3 A continuous forward current and negligible reverse recovery, the diode prevents the inductor current from creating destructive voltage spikes when the main switch turns off. In buck, boost, and SEPIC topologies operating at 24 V or below, the MBRS360T3G's 60 V reverse-voltage rating provides a 2.5x safety margin over the bus voltage, suiting continuous operation in industrial 24 V systems. The SMC J-lead package offers thermal resistance around 15 °C/W on 1 oz copper, allowing 3 A continuous conduction with a properly sized PCB pad.
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Reverse-Polarity / Battery Protection
The MBRS360T3G is widely used in series with the load or supply rail to block reverse-battery connection in portable and automotive systems. Its 60 V VRRM covers 12 V / 24 V automotive transients with margin, and the low 0.62 V forward drop minimizes the always-on voltage penalty. At a steady 3 A load the diode dissipates about 1.86 W; on the SMC J-lead footprint with adequate copper this remains within thermal limits. Reverse-polarity protection is a simple yet critical safety function that protects downstream MOSFETs, ICs, and connectors from the -12 V or -24 V reverse condition that can occur during battery replacement or jump-start events.
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OR-ing Diode in Redundant Power Architectures
In server, telecom, and industrial-redundant systems the MBRS360T3G provides low-loss OR-ing between parallel 12 V or 24 V supplies feeding a common load. The Schottky barrier allows the higher-voltage source to dominate while blocking back-feed into a failed supply, with forward drop around 0.62 V at 3 A keeping dissipation manageable. The 60 V reverse rating provides headroom for transients on 48 V telecom rails (typically 54 V). Compared with ideal-diode MOSFET controllers the discrete Schottky is simpler and lower cost, at the trade-off of a 0.6 V continuous drop versus near-zero for a P-MOSFET OR-ing circuit.
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Low-Voltage Motor Drive Clamping
Across a brushed DC motor or relay coil the MBRS360T3G acts as a flyback clamp, absorbing the inductive kickback when current is interrupted. The 60 V reverse rating easily handles the L·di/dt spike from small 12 V / 24 V motor windings, while the 3 A continuous rating covers most sub-1 A motor coils with safety margin. Per the onsemi datasheet the device is 'ideally suited for ... free wheeling ... in surface mount applications where compact size and weight are critical', matching motor-control PCB realities. The SMC package's J-lead construction survives thermal cycling and vibration better than leadless alternatives.
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High-Frequency Rectification in RF and Telecom
In RF energy harvesting, RFID reader boards, and small-cell telecom front ends the MBRS360T3G serves as a high-frequency detector or rectifier at 13.56 MHz, 900 MHz, and similar bands. The Schottky construction preserves small-signal linearity and the lack of minority-carrier storage eliminates the reverse-recovery distortion that P-N rectifiers impose above a few hundred kilohertz. With VRRM = 60 V the device handles rectified RF outputs from 12 V / 24 V RF amplifier supplies safely. The SMC package keeps the parasitic inductance minimal, which is critical at VHF and UHF where lead inductance begins to dominate.
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추천 제품 요약
엔지니어링 참조 데이터: MBRS360T3G — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MBRS360BT3G | NRVBS360T3G | NRVBS360BNT3G | SS36-E3/57T | STPS3L60S | B360-13-F |
|---|---|---|---|---|---|---|---|
| Brand | onsemi | onsemi | onsemi | onsemi | Vishay Intertechnology | STMicroelectronics | Diodes Incorporated |
| Package | SMC (DO-214AB) | SMC (DO-214AB) - same | SMC (DO-214AB) - same | SMC (DO-214AB) - same | SMC (DO-214AB) - same | SMC (DO-214AB) - same | SMC (DO-214AB) - same |
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| Average Rectified Forward Current (IF(AV)) | 3 A | 3 A | 3 A | 3 A | 3 A | 3 A | 3 A |
| Forward Voltage (VF max) at IF = 3 A | 0.74 V | 0.74 V | 0.74 V | 0.74 V | 0.75 V | 0.65 V | 0.79 V |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 80 A | 80 A | 80 A | 80 A | 100 A | 75 A | 70 A |
| Operating Junction Temperature Range | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C | -55 °C to +150 °C |
| Automotive Grade (AEC-Q) | No (standard grade) | No | Yes (AEC-Q qualified) | Yes (AEC-Q qualified) | No | No | No |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
주요 차별점
- Lower forward voltage drop than B360-13-F (vs B360-13-F)
- Higher IFSM rating than STPS3L60S (vs STPS3L60S)
- Same-die automotive grade available in identical package (vs MBRS360T3G (standard))
- Lower forward drop than SS36-E3/57T (vs SS36-E3/57T)
설계 노트
Estimated: at IF = 3 A with typical VF = 0.62 V, conduction loss is about 1.86 W; with a JEDEC-standard SMC footprint on 1 oz copper the package thermal resistance RθJA is roughly 15 °C/W, giving a junction-to-ambient rise of approximately 28 °C above ambient at full load. Keep the cathode copper pad to at least 100 mm² and place thermal vias under the tab for 3 A continuous operation. Per the onsemi datasheet the rated 3 A average rectified current applies at TL = 110 °C, meaning the case (tab) temperature must stay below this limit.
The SMC J-lead package requires a land pattern that matches DO-214AB footprints. Per onsemi's recommended PCB layout, the cathode pad should extend into a copper pour that also serves as the heatsink, while the anode pad is a smaller thermal island. Hand-soldering is not recommended for production volumes - use reflow profiles per IPC J-STD-020 with a peak temperature below 260 °C. The MSL 1 rating means the device does not require dry-pack baking prior to reflow.
Do not parallel multiple MBRS360T3G devices without ballast resistors - Schottky diodes have a negative temperature coefficient on VF, so the hottest unit will hog current and possibly fail. In OR-ing applications use a single diode per branch, sized for the full load current. For reverse-polarity protection, place the diode on the supply side of any inrush-limiting components to avoid transients bypassing it. Finally, do not exceed 80 % of VRRM in continuous DC operation, as voltage transients from load dumps or inductive kickback can quickly exceed the 60 V rating.
At high switching frequencies the SMC package's lead inductance (typically 1-2 nH per lead) can introduce ringing and overshoot. For switching converters above 500 kHz, place the MBRS360T3G within 5 mm of the switching node and use a small RC snubber (10-22 Ω + 1-2 nF) if overshoot exceeds the 60 V rating. The Schottky construction eliminates reverse-recovery charge, but the junction capacitance (typically 200-400 pF at 4 V) becomes the dominant AC characteristic at frequencies above 1 MHz.
규정 준수 정보
Standard MBRS360T3G is not AEC-Q qualified; choose NRVBS360T3G or NRVBS360BNT3G for AEC-Q automotive qualification. RoHS compliant matte-tin finish per onsemi datasheet MBRS360T3-D.
