MHL19338N - PCS Band RF LDMOS Amplifier, 4W, 30dB | NXP
부품 번호: MHL19338N ✗ 단종| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $47.5318 | $47.53 |
| 10 | $45.5 | $455.00 |
| 100 | $42.1 | $4,210.00 |
| 500 | $39.2 | $19,600.00 |
| 1,000 | $36.75 | $36,750.00 |
MHL19338N 개요
What is an RF LDMOS amplifier? LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a power FET technology optimized for RF amplification in the HF, VHF, and microwave bands. Compared to traditional silicon bipolar or GaAs devices, LDMOS combines high gain, high efficiency, and ruggedness with low memory effects, making it the dominant technology in cellular base-station power amplifiers. An 'RF linear LDMOS amplifier' specifically targets signals with amplitude modulation (such as multi-carrier W-CDMA, LTE, or CDMA) where amplitude distortion must be controlled to preserve spectral mask and ACPR performance. The MHL19338N belongs to the NXP/Freescale heritage RF power discrete family historically used in PCS/cellular infrastructure.
Key differentiating specifications include 30 dB gain, 4.0 W CW output power at 1 dB compression, and a maximum supply current of 525 mA from a 26 V nominal rail. The 50-ohm input and output impedances simplify matching networks, while the maximum CW input power rating of 10 dBm protects the gate under high drive conditions. Operating temperature spans -20 C to +100 C for controlled-environment base-station deployments.
The internal architecture uses a single silicon LDMOS FET die in a Class A bias configuration to maximize linearity at the expense of DC efficiency. The TO-272 WB-16 over-molded plastic body material provides a balance of thermal dissipation and manufacturability, and the device is supplied as a discrete ceramic/plastic flange-mount or leadless SMT-style RF module.
Typical applications include PCS base-station driver and output stages, 1.9-2.0 GHz CDMA/TDMA repeaters, WLL (Wireless Local Loop) equipment, and low-power 1.9 GHz ISM-band transmitters. Per the manufacturer datasheet, the part was eventually replaced by MHL19338NN with 'no form, fit or function changes' - so customers qualifying new designs should consult NXP product-change notifications for current recommendations.
When using this device, observe RF layout best practices: microstrip-controlled-impedance traces on the input and output, low-inductance grounding of the source leads, and adequate copper thermal spreading under the package flange. Bypass the drain supply with both 100 nF and 10 uF capacitors placed as close as possible to the device pin to prevent parametric oscillation.
This page synthesizes distributor stock status, the manufacturer's archived datasheet, and drop-in alternatives (including the form-fit-function successor MHL19338NN) - practical procurement and design information not collected in a single place elsewhere.
드롭인 대체품: MHL19338N — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MHL19338NN
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MHL19338
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MW6IC2240GN
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MW7IC2240GN
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BLF4G20LS-90
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MHL19338N 최대 정격 & 전기적 특성
| Technology | LDMOS (Silicon FET) |
| Frequency Band | 1900 MHz to 2000 MHz (PCS) |
| Output Power (P1dB) | 4.0 W (CW) |
| Small-Signal Gain | 30 dB |
| Maximum Supply Current | 525 mA |
| Drain Supply Voltage (nominal) | 26 V |
| Characteristic Impedance | 50 ohm |
| Maximum Input Power (CW) | 10 dBm |
| Minimum Operating Temperature | -20 C |
| Maximum Operating Temperature | +100 C |
| Amplifier Class | Class A |
| 패키지 | TO-272 WB-16 (over-molded plastic) |
| Package Body Material | Plastic / Epoxy |
| Typical Modulation Support | CDMA, TDMA, PCS |
| RoHS 상태 | unknown |
MHL19338N 핀 구성
| 핀 1 | RF_IN — RF input (gate), 50 ohm, nominal -10 to 0 dBm drive |
| 핀 2 | GND — Source / ground paddle (case) |
| 핀 3 | GND — Source / ground paddle (case) |
| 핀 4 | GND — Source / ground paddle (case) |
| 핀 5 | GND — Source / ground paddle (case) |
| 핀 6 | GND — Source / ground paddle (case) |
| 핀 7 | N/C — No internal connection (not connected) |
| 핀 8 | N/C — No internal connection (not connected) |
| 핀 9 | GND — Source / ground paddle (case) |
| 핀 10 | VDD — Drain supply, +26 V nominal, bypass with 100 nF + 10 uF |
| 핀 11 | N/C — No internal connection (not connected) |
| 핀 12 | N/C — No internal connection (not connected) |
| 핀 13 | GND — Source / ground paddle (case) |
| 핀 14 | GND — Source / ground paddle (case) |
| 핀 15 | N/C — No internal connection (not connected) |
| 핀 16 | RF_OUT — RF output (drain), 50 ohm |
안전 동작 영역 (Drain)
일반적인 애플리케이션
MHL19338N 적합 용도: 6 애플리케이션s: PCS Base-Station Driver / Output Stage, PCS-Band CDMA/TDMA Repeater, 1.9 GHz Wireless Local Loop (WLL) Transmitter, Low-Power PCS-Band Laboratory / Test Source, Industrial / Scientific 1.9 GHz Transmitter, Cellular Repeater Back-Haul Front-End.
PCS Base-Station Driver / Output Stage
The MHL19338N's 30 dB gain and 4 W P1dB output make it a natural fit as a driver or low-power final stage in 1.9-2.0 GHz PCS cellular base-station transmit chains. Per the manufacturer datasheet, the silicon FET Class A design provides excellent group delay and phase linearity required for CDMA and TDMA spectral masks. Placed downstream of the digital pre-distortion (DPD) feedback path, it produces low ACPR when operated 3-6 dB below P1dB. Unlike GaAs PHEMT alternatives, it offers a 26 V drain rail that simplifies power-supply design and costs less than competing GaN parts at sub-5 W levels.
추천
PCS-Band CDMA/TDMA Repeater
Repeater amplifiers in the 1900-2000 MHz PCS band benefit from the MHL19338N's 50-ohm input/output and 30 dB of flat gain. A typical indoor or picocell repeater uses the part in a Class A linear block to minimize intermodulation between simultaneously amplified uplink and downlink carriers. The 26 V drain rail supports standard -48 V / 24 V telecom back-plane power conversion, while the plastic TO-272 WB-16 package delivers a thermal path suitable for the 4 W CW dissipation when mounted on a copper-spreader PCB. Designers should still back off from P1dB to keep IM3 below -60 dBc typical multi-carrier targets.
추천
1.9 GHz Wireless Local Loop (WLL) Transmitter
WLL infrastructure in the 1.9 GHz ISM/PCS overlap uses the MHL19338N as a compact, line-powered transmitter output stage when only a few watts of linear RF output are required. The 30 dB gain lets the design accept a low-power (-10 to -5 dBm) direct-modulation source and still deliver 4 W P1dB, dramatically simplifying filter and combiner sizing downstream. The -20 C to +100 C operating range covers outdoor enclosures without additional heating. Its 50-ohm nature eliminates lossy inter-stage baluns in single-ended designs.
추천
Low-Power PCS-Band Laboratory / Test Source
Test-and-measurement engineers use the MHL19338N as a stable, narrow-band lab source for PCS-band amplifier characterization. Its single-tone CW output of 4 W at 1 dB compression, combined with predictable 50-ohm S-parameters, makes it useful for ACPR benchmarking and device-under-test gain calibration. The LDMOS die provides good intermodulation stability, which aids in measuring the linearity of cascaded DUTs. A 26 V bench supply and matched attenuator pad complete a typical ATE-grade RF chain.
추천
Industrial / Scientific 1.9 GHz Transmitter
The 1.9 GHz DECT and unlicensed PCS-adjacent industrial bands benefit from the MHL19338N's rugged silicon LDMOS technology, which tolerates load mismatches better than GaAs PHEMTs at the same power level. Industrial sensor networks that need a few watts of linear RF (for instance, low-power broadcast links or telemetry hubs) leverage its 4 W P1dB and 30 dB gain with the same 26 V supply used by the broader industrial -bus ecosystem. The over-molded plastic package withstands conformal coating and harsh-shop-floor environments.
추천
Cellular Repeater Back-Haul Front-End
Back-haul links and small-cell front-ends at 1.9-2.0 GHz deploy the MHL19338N as a pre-driver when the system architecture calls for several cascaded amplifier blocks with predictable inter-stage matching. Because the part ships in a 50-ohm in/out configuration with 30 dB of flat gain, it sits naturally between the transceiver chip and a higher-power LDMOS final. Designers pair it with SAW filters for band cleanup and benefit from the same 26 V supply rail as the rest of the RF front end - a 1:1 cross-reference for the more powerful MW6IC2240GN family member.
추천
추천 제품 요약
엔지니어링 참조 데이터: MHL19338N — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MHL19338NN | MHL19338 | MW6IC2240GN | MW7IC2240GN | BLF4G20LS-90 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon |
| Package | TO-272 WB-16 | TO-272 WB-16 | TO-272 WB-16 | TO-272 WB-16 | TO-272 WB-16 | SOT895 (LDMOS plastic) |
| Frequency Band | 1900-2000 MHz | 1900-2000 MHz | 1900-2000 MHz | 1800-2200 MHz | 1800-2200 MHz | 1800-2000 MHz |
| Output Power (P1dB) | 4.0 W | 4.0 W | 4.0 W | 16 W | 16 W (2-stage) | 80 W |
| Small-Signal Gain | 30 dB | 30 dB | 30 dB | 28 dB | 32 dB (cascade) | 19 dB |
| Drain Supply | 26 V | 26 V | 26 V | 28 V | 28 V | 28 V |
| Impedance | 50 ohm | 50 ohm | 50 ohm | 50 ohm | 50 ohm | 50 ohm |
주요 차별점
- Form-fit-function successor available with same package (vs MHL19338NN)
- Higher P1dB available in the same TO-272 WB-16 footprint (vs MW6IC2240GN)
- Single-stage 30 dB gain reduces cascaded board complexity (vs MW7IC2240GN)
설계 노트
Estimated: at P1dB = 4 W RF out with drain efficiency approximately 35% Class A, the MHL19338N dissipates roughly 7.4 W of DC power into the case. The TO-272 WB-16 package theta_JA is not in the public excerpt, but designers should land the device on >= 4 square inches of 2 oz copper with thermal vias and keep the case temperature below 100 C to remain within the -20 C to +100 C operating envelope.
Place 100 nF and 10 uF bypass capacitors as close as possible to the drain pin to suppress parametric oscillation. The input trace must be a 50-ohm microstrip; keep the gate-matching network within 50 mils of the gate pad to prevent gain ripple. Use a single continuous ground plane under the source paddle with multiple stitched vias along the package heat-sink flange.
Do not apply drain voltage before gate bias is established - LDMOS devices can be destroyed by transient drain turn-on. Sequence: ground -> negative gate bias -> drain voltage -> gate ramp to quiescent current. Also avoid driving the RF input above 10 dBm CW as the datasheet maximum input power; doing so destroys the gate. Finally, back off 3-6 dB from P1dB for any multi-carrier or W-CDMA signal to meet spectral-emission masks.
Keep the input (gate) side physically separated from the output (drain) side to break potential feedback paths; place the package flange parallel to the long edge of the PCB. For double-sided boards, flood the back side with ground copper under the source paddle and stitch with 4-6 mil via fences on a 50-mil pitch. Use NXP's MRF19030/MRF19045 application-note layouts as references when scaling MHL19338N into a multi-stage amplifier.
규정 준수 정보
Compliance data for MHL19338N was not present in the verified excerpts. RoHS/REACH/lead-free status must be obtained from the NXP environmental compliance letter (MFN) referenced in the product page. This part is not AEC-Q100 qualified (RF power device, automotive not the target application).
