MMA20312BT1 - 2-Stage InGaP HBT Linear Amplifier, 1.8-2.2 GHz | NXP
부품 번호: MMA20312BT1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $8.95 | $8.95 |
| 10 | $7.85 | $78.50 |
| 100 | $6.5 | $650.00 |
| 500 | $5.4 | $2,700.00 |
| 1,000 | $4.85 | $4,850.00 |
MMA20312BT1 개요
An RF linear amplifier is a power-amplifier class that simultaneously delivers usable gain across a defined frequency band while preserving modulation fidelity (low ACLR and EVM) for complex digital waveforms such as LTE, UMTS, TD-SCDMA and PCS. As a member of the broader RF power amplifier (RF PA) family, which sits between driver amplifiers and final-stage PAs in the transmitter chain, the InGaP HBT process used here provides high power-added efficiency (PAE) and excellent thermal robustness versus older GaAs MESFET designs.
Key features of the MMA20312BT1 include 27.2 dB gain across 1800-2200 MHz, +30.5 dBm P1dB output, single 5V rail with internal matching, integrated active bias network, and an exposed-pad QFN-12 (3x3 mm) package that lowers thermal resistance (theta_JC) to roughly 10 C/W and simplifies PCB layout. The 2-stage cascade topology minimizes external component count while providing enough gain to be driven directly from a transceiver output.
The architecture is a 2-stage Class AB InGaP HBT cascade with internal 50-ohm matching networks on input and output. Each HBT stage is biased by an on-chip active bias circuit that compensates for temperature and process variations, holding quiescent current stable over -40 C to +85 C. The exposed-pad QFN package provides a low-inductance ground and a low-thermal-impedance path to the PCB copper pour.
Typical applications include driver amplifiers in macro-cell wireless base stations, output stages in femtocells, indoor repeaters and small-cell remote radio heads, and final-stage PAs in 2.1 GHz / TD-SCDMA / UMTS customer-premises equipment. The +30.5 dBm output makes it well suited where the next stage is a higher-power LDMOS final PA or where a small cell is built without a final PA at all.
When designing with this part, ensure the 5V supply is well decoupled and that the exposed pad has a continuous ground pour with multiple thermal vias; current draw is approximately 70 mA. Match the input/output traces to 50 ohm controlled-impedance PCB material and follow the reference layout in the manufacturer evaluation board to avoid gain ripple outside the 1.8-2.2 GHz band.
This page synthesizes distributor pricing, drop-in alternatives drawn from the NXP MMA20312 product family, and practical RF design notes that complement (but do not replace) the manufacturer datasheet.
드롭인 대체품: MMA20312BT1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MMA20312BT1 (동일 폼 팩터 및 풋프린트) — 차이점: Frequency Range, RoHS Status, Small-Signal Gain, Supply Voltage, Topology.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MMA20312BVT1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MMZ09312BT1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MMA20312BT1G
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
MMA20312BT3
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
MMA25312BT1
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$3.65 / 개
데이터시트 보기 →MMA20312BT1 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Product Type | RF Linear Power Amplifier |
| Technology | InGaP HBT (Heterojunction Bipolar Transistor) |
| 토폴로지 | 2-stage Class AB cascade |
| Frequency Range | 1800 MHz to 2200 MHz |
| Small-Signal Gain | 27.2 dB |
| Saturated Output Power (Psat) | 30.5 dBm (~1.1 W) |
| 공급 전압 | 5 V |
| Supply Current (Idq) | 70 mA typical |
| 패키지 / 케이스 | 12-QFN (3x3 mm) with Exposed Pad |
| 실장 유형 | Surface Mount |
| RF Input/Output Match | Internal 50 ohm |
| Supported RF Standards | LTE, PCS, TD-SCDMA, UMTS |
| RoHS 상태 | Compliant (per NXP product page) |
| Lead-Free | Yes |
| Packaging | Tape & Reel |
MMA20312BT1 핀 구성
| 핀 1 | RF_IN — RF input (internally matched to 50 ohm) |
| 핀 2 | GND — Ground |
| 핀 3 | GND — Ground |
| 핀 4 | VCC — +5 V supply |
| 핀 5 | GND — Ground |
| 핀 6 | GND — Ground |
| 핀 7 | RF_OUT — RF output (internally matched to 50 ohm) |
| 핀 8 | GND — Ground |
| 핀 9 | GND — Ground |
| 핀 10 | GND — Ground |
| 핀 11 | GND — Ground |
| 핀 12 | VCC — +5 V supply (bias network) |
안전 동작 영역 - HBT Amplifier Output
일반적인 애플리케이션
MMA20312BT1 적합 용도: 7 애플리케이션s: Macro-cell Wireless Base Station Driver Amplifier, Femtocell and Small-Cell Final PA, Indoor Wireless Repeater Output Amplifier, TD-SCDMA 2.0-2.2 GHz Customer-Premises Equipment, PCS / UMTS Band 1 Driver Stage, LTE Small-Cell / Pico-Cell Transmit Chain, Test & Measurement RF Power Stage.
Macro-cell Wireless Base Station Driver Amplifier
The MMA20312BT1's 27.2 dB gain and +30.5 dBm saturated output make it well suited as the driver stage feeding a higher-power LDMOS final PA in 1.8-2.2 GHz macro base-station transmitters, including UMTS Band 1, LTE Band 1, and TD-SCDMA. Placed between the transceiver/up-converter output and the final-stage LDMOS PA input, the InGaP HBT cascade delivers sufficient gain to compensate for filter and trace losses between stages. Unlike a final-stage LDMOS device, the HBT amplifier adds predictable gain flatness across the band and operates from a single 5 V rail, simplifying the bias tree. Linearity under WCDMA and LTE OFDMA is sufficient for driver-amplifier duty; the final PA handles the heavy lifting for ACLR and EVM.
추천
Femtocell and Small-Cell Final PA
Indoor femtocells, picocells, and small-cell remote radio heads typically need only a few hundred milliwatts of RF output, which fits comfortably within the MMA20312BT1's +30.5 dBm (1.1 W) Psat rating. Using the part as the final amplifier eliminates the cost, board area, and bias complexity of a higher-power LDMOS final stage, while still meeting UMTS/LTE conducted-output requirements for sub-100 mW radiated power after antenna losses. The internal 50-ohm matching removes all inter-stage matching networks, allowing a very compact 2-layer or 4-layer PCB implementation that fits inside small-cell enclosures. Single 5 V supply and 70 mA quiescent current keep power consumption low enough for PoE-powered small cells.
추천
Indoor Wireless Repeater Output Amplifier
Building-top and indoor wireless repeaters for UMTS/LTE re-broadcast benefit from the MMA20312BT1's 27.2 dB gain, which is enough to compensate for duplexer and filter losses between the donor antenna feed and the indoor re-radiator. The 1.8-2.2 GHz band covers UMTS Band 1, LTE Band 1, and TD-SCDMA 2010-2025 MHz downlink, all common indoor-coverage targets. Internal 50-ohm matching simplifies the duplexer-to-PA interface, and the exposed-pad QFN-12 package keeps thermal resistance low enough to sustain +30.5 dBm into a 50-ohm load on a modest copper pour. The single 5 V rail and on-chip active bias reduce component count versus discrete GaAs MESFET designs.
추천
TD-SCDMA 2.0-2.2 GHz Customer-Premises Equipment
TD-SCDMA operates in the 2010-2025 MHz band, which sits well within the MMA20312BT1's 1.8-2.2 GHz operating range. The part's 27.2 dB gain is enough to drive a final radiating element directly in customer-premises CPE such as indoor TD-SCDMA routers, residential femtocells, and small-office transceivers. The Class AB bias keeps average current draw proportional to RF output, which simplifies thermal management in compact plastic enclosures where heat-sinking options are limited. The exposed-pad QFN-12 package allows direct PCB copper-pour heat extraction without an external heatsink.
추천
PCS / UMTS Band 1 Driver Stage
In PCS (1850-1910 MHz uplink, 1930-1990 MHz downlink) and UMTS Band 1 (1920-1980 MHz UL, 2110-2170 MHz DL) transmitter chains, the MMA20312BT1 provides a high-linearity, moderate-power driver stage between the transceiver output and the final PA. Its 27.2 dB gain lets the design use a low-output transceiver DAC without sacrificing drive level to the LDMOS final, while the +30.5 dBm Psat provides headroom margin under WCDMA and LTE modulation peaks. Internal 50-ohm matching keeps the inter-stage network to a single bandpass filter, which simplifies the overall BOM. Quiescent current of 70 mA at 5 V yields roughly 350 mW DC consumption, well within the thermal budget of a QFN-12 footprint on a 2 oz copper pour.
추천
LTE Small-Cell / Pico-Cell Transmit Chain
Pico-cell and enterprise small-cell LTE base stations typically transmit at 0.1-1 W average RF power per antenna, which aligns with the MMA20312BT1's +30.5 dBm Psat rating. Using the part either as a final PA or as a high-gain driver lets designers standardize a single amplifier footprint across multiple small-cell SKUs. The InGaP HBT process delivers the linearity (ACLR and EVM) required for LTE OFDMA modulation across the 1.8-2.2 GHz band. Single 5 V supply and a 12-QFN 3x3 mm footprint ease integration into compact small-cell radio units that may aggregate multiple bands on a shared baseband. Active on-chip bias keeps quiescent current stable over -40 C to +85 C ambient, important for outdoor-mounted small cells.
추천
Test & Measurement RF Power Stage
Bench-top signal sources, RF test sets, and laboratory amplifiers for 2 GHz cellular-band compliance testing benefit from the MMA20312BT1's predictable +30.5 dBm Psat and 27.2 dB small-signal gain. Internal 50-ohm matching allows the part to be used as a stand-alone bench amplifier block, fed from a laboratory signal generator and driving a 50-ohm load or DUT directly. The exposed-pad QFN-12 package with a continuous ground pour and multiple thermal vias is straightforward to integrate into a small aluminum-housed evaluation module. The single 5 V rail simplifies bench-top power supply design relative to GaAs MESFET amplifiers that require negative bias.
추천
추천 제품 요약
엔지니어링 참조 데이터: MMA20312BT1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MMA20312BVT1 | MMZ09312BT1 | MMA20312BT1G | MMA25312BT1 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | 12-QFN-3x3 (Exposed Pad) | 12-QFN-3x3 (Exposed Pad) - same | 12-QFN-3x3 (Exposed Pad) - same | 12-QFN-3x3 (Exposed Pad) - same | 12-QFN-3x3 (Exposed Pad) - same |
| Frequency Range | 1.8-2.2 GHz | 1.8-2.2 GHz | 0.4-2.4 GHz | 1.8-2.2 GHz | 2.3-2.7 GHz |
| Small-Signal Gain | 27.2 dB | 27.2 dB | 19 dB | 27.2 dB | 27 dB |
| Saturated Output Power | +30.5 dBm | +30.5 dBm | +21 dBm P1dB | +30.5 dBm | +30 dBm |
| Supply Voltage | 5 V | 5 V | 5 V | 5 V | 5 V |
| Technology | InGaP HBT | InGaP HBT | InGaP HBT | InGaP HBT | InGaP HBT |
주요 차별점
- Highest gain in the 1.8-2.2 GHz NXP QFN-12 family (vs MMZ09312BT1)
- Higher saturated output power than the wideband sibling (vs MMZ09312BT1)
- Pin-compatible with broader-band NXP same-family amplifiers (vs MMA25312BT1)
- Drop-in packaging code variants for high-volume assembly (vs MMA20312BVT1)
설계 노트
Use a 4-layer PCB stack-up with 50-ohm microstrip on the top layer and a continuous ground plane on layer 2 (below 0.2 mm dielectric). Place a 100 nF decoupling capacitor within 0.5 mm of the VCC pins, with a 10 uF tantalum or polymer bulk capacitor on the same supply trace. Stitch the ground pour around the QFN-12 exposed pad with at least 9 thermal vias (ideally 16 in a 4x4 grid) to keep theta_JB below 10 C/W. Avoid routing digital or DC-bias traces directly under the RF input/output microstrip lines to minimize coupling into the high-gain 27 dB cascade.
At +30.5 dBm (1.1 W) saturated output, roughly 50% DC-to-RF efficiency means the part dissipates about 1 W of heat into the PCB copper pour. With the QFN-12 (3x3 mm) exposed pad, junction-to-board thermal resistance is approximately 10 C/W - so a 1 W dissipation yields a 10 C rise above the PCB copper. Keep the PCB copper pour under the exposed pad at least 1 square inch (roughly 25x25 mm) of continuous 2 oz copper to keep junction temperature below +125 C at +85 C ambient. Mounting the part on the underside of the PCB (away from heatsinks) is acceptable if the PCB is aluminum-backed or has an internal copper coin.
Do not bypass the exposed pad with solder mask - the pad must be soldered directly to the PCB ground pour with no thermal vias inside the solder-mask-defined opening. Do not exceed +6 V on VCC - the InGaP HBT process is not rated above 6 V and will degrade the MTTF and gain flatness. Do not omit input/output series DC-blocking capacitors if driving from a non-AC-coupled source - the internal matching network assumes DC-blocked RF paths. Always include a small ferrite bead or inductor on the VCC supply trace to prevent 1.8-2.2 GHz feedback into the supply rail, which can cause gain ripple or instability at high output power.
At 27.2 dB small-signal gain, the MMA20312BT1 is highly sensitive to supply-rail noise and ground-bounce. Place a ferrite bead (approximately 600 ohm at 100 MHz) in series with the VCC trace, followed by a 10 uF and 100 nF decoupling pair within 1 mm of the VCC pin. Avoid sharing ground return paths between the RF stages and any digital control circuitry on the same PCB - route the RF ground pour back to a single point near the part's exposed pad to prevent digital switching noise from modulating the RF carrier. For LTE/UMTS linearity-critical applications, the on-chip active bias network already compensates for temperature drift, so additional bias-stabilization components are typically unnecessary.
규정 준수 정보
RoHS and REACH compliant per NXP product page. Not AEC-Q100 qualified (RF amplifier for cellular infrastructure, not automotive). Lead-free reflow profile per JEDEC J-STD-020. Halogen-free status not explicitly published for this part - default to 'unknown' until confirmed on NXP product page.
