MRF6S9125NBR1 - 880MHz 27W RF Power LDMOS | NXP Semiconductors
부품 번호: MRF6S9125NBR1 ⚠ 최종 구매| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $38.5 | $38.50 |
| 10 | $34.2 | $342.00 |
| 50 | $30.1 | $1,505.00 |
| 100 | $27.4 | $2,740.00 |
| 500 | $24.85 | $12,425.00 |
MRF6S9125NBR1 개요
An RF Power LDMOS (Laterally-Diffused Metal-Oxide-Semiconductor) is a specialized power MOSFET whose drift region is diffused laterally under the gate. This architecture is the dominant technology in modern base-station RF power amplifiers because it combines high RF output power, high drain efficiency, high ruggedness under VSWR mismatch, and excellent thermal conductivity when mounted directly to a copper heatsink. LDMOS devices sit within the broader hierarchy: RF power transistor -> discrete semiconductor -> power amplifier building block -> base-station RF front-end.
Key features of the MRF6S9125NBR1 include 28 V typical drain operation with a 68 V maximum drain-source rating, 950 mA quiescent/test current at the published test condition, 20.2 dB power gain, and broadband performance up to 1000 MHz. The device is designed for single-N-CDMA, GSM, GSM EDGE, and multicarrier amplifier applications, with high gain and broadband capability eliminating the need for narrow-band matching networks.
The part is fabricated using NXP's high-voltage LDMOS process with a lateral channel and an integrated source-connected field plate. The TO-272 WB-4 ceramic package provides a low-thermal-resistance path from die to heatsink, with the bolt-down flange enabling direct mounting to a spreader or cold plate. The "NB" suffix indicates tape-and-reel packaging for high-volume assembly.
Typical applications include 880 MHz cellular base-station power amplifiers, GSM/EDGE repeaters, multicarrier driver stages, and industrial RF heating/generator amplifiers operating in the 865-960 MHz ISM/RFID band. Designers should note the device was succeeded by the MRFE6S9125NR1/NBR1 family per NXP PCN12895, with the "E" denoting an enhanced/replacement die generation.
드롭인 대체품: MRF6S9125NBR1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRFE6S9125NBR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRFE6S9125NR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF6S9125NR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF6S9125NBR1 최대 정격 & 전기적 특성
| 트랜지스터 유형 | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) |
| Application Band | 865-960 MHz (UHF/cellular) |
| Test Frequency | 880 MHz |
| Output Power (Avg) | 27 W at 28 V |
| Power Gain | 20.2 dB |
| Drain-Source Voltage (Max Rated) | 68 V |
| Test Drain Voltage | 28 V |
| Test Drain Current | 950 mA |
| 패키지 | TO-272 WB-4 |
| 실장 유형 | Surface Mount / Flange Bolt-Down |
| Mode | Class AB (typical, single-N-CDMA) |
| Input Matching | Internal / broadband |
| Lead Free Status | Replaced by MRFE6S9125NBR1 per PCN12895 |
MRF6S9125NBR1 핀 구성
| 핀 1 | GATE (RF IN) — RF input / gate bias; matched to 50 ohms with external network |
| 핀 2 | DRAIN (RF OUT) — RF output / drain supply; matched to 50 ohms, 28 V nominal |
| 핀 3 | SOURCE / FLANGE — Source and thermal ground; bolted to heatsink/spreader |
| 핀 4 | SOURCE / FLANGE — Source and thermal ground (second flange connection) |
안전 동작 영역 (Drain Current vs Drain-Source Voltage)
일반적인 애플리케이션
MRF6S9125NBR1 적합 용도: 6 애플리케이션s: 880 MHz Cellular Base-Station Power Amplifier Final Stage, GSM / GSM EDGE Repeater Amplifier, Multicarrier Driver Amplifier, Industrial UHF RFID / ISM Band Amplifier, RF Plasma / Industrial Heating Generator, Public-Safety / Private Land Mobile Radio (LMR) Repeater.
880 MHz Cellular Base-Station Power Amplifier Final Stage
The MRF6S9125NBR1 is purpose-built for the final-stage PA in 880 MHz cellular base stations, where it delivers 27 W average output power at 28 V with 20.2 dB gain. The 20.2 dB gain eliminates a driver stage in many configurations, simplifying the RF chain. The TO-272 WB-4 ceramic package mounts directly to a copper spreader, providing the thermal headroom required for continuous CDMA/EDGE operation. Designers should note the device is biased Class AB for linearity, suitable for single-N-CDMA, GSM, and EDGE modulation schemes. NXP's datasheet specifies this exact use case as the primary application.
추천
GSM / GSM EDGE Repeater Amplifier
For GSM and GSM EDGE repeater infrastructure in the 900 MHz band, the MRF6S9125NBR1 provides the broadband, high-linearity gain block required to compensate for cable and free-space path loss. The lateral MOSFET structure delivers high gain across the 865-960 MHz range, allowing a single part to cover the entire GSM-900 uplink and downlink bands. Its 27 W average power capability is well-matched to mid-power repeater deployments. The bolt-down ceramic package supports field-serviceable module designs that need robust thermal performance.
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Multicarrier Driver Amplifier
The MRF6S9125NBR1's broadband response makes it an excellent driver for higher-power final stages in multicarrier amplifier (MCPA) configurations. Its 20.2 dB gain and 27 W output provide substantial drive headroom, while the lateral MOSFET architecture offers the linearity needed when multiple carriers are combined. In an MCPA lineup, one MRF6S9125NBR1 can drive a 60-100 W final device, with the ceramic flange spreading heat evenly across the heatsink. Designers should refer to NXP application notes on multicarrier bias and matching for optimum IM3/IM5 performance.
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Industrial UHF RFID / ISM Band Amplifier
In the 865-960 MHz ISM and UHF RFID band, the MRF6S9125NBR1 can serve as the final PA in industrial readers, tag writers, and RF generators. Its broadband nature accommodates regional ISM allocations (902-928 MHz in the US, 865-868 MHz in EU) without retuning. The 27 W continuous-duty capability supports long-range RFID reader designs. The TO-272 package's thermal mass allows sustained CW operation at full power when properly heatsinked. Industrial designers should confirm regulatory limits (ETSI EN 302 208, FCC Part 15) for their target region.
추천
RF Plasma / Industrial Heating Generator
The MRF6S9125NBR1's continuous-duty 27 W rating and rugged LDMOS construction suit it to RF plasma generators and industrial heating systems operating near 880-915 MHz. Its high gain reduces the number of gain stages required, and the lateral MOSFET structure tolerates the load mismatches typical of plasma loads. The ceramic package provides excellent thermal transfer to a water-cooled or forced-air heatsink. Note that for higher-power heating applications (hundreds of watts), multiple MRF6S9125NBR1 devices are typically combined using RF power combiners.
추천
Public-Safety / Private Land Mobile Radio (LMR) Repeater
Private LMR and public-safety repeater systems often operate in 800/900 MHz bands adjacent to or overlapping with the MRF6S9125NBR1's 865-960 MHz coverage. The device's broadband gain and 27 W output are well-suited to P25, DMR, and Tetra repeater final stages where linearity and reliability matter. The N-channel enhancement-mode LDMOS construction is bias-stable and predictable across the operating temperature range. Existing MRF6S9125NBR1 repeaters in the field should plan migration to the MRFE6S9125NBR1 for new builds and major repairs.
추천
추천 제품 요약
엔지니어링 참조 데이터: MRF6S9125NBR1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRFE6S9125NBR1 | MRFE6S9125NR1 | MRF6S9125NR1 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-272 WB-4 | TO-272 WB-4 - same | TO-272 WB-4 - same | TO-272 WB-4 - same |
| Output Power (Avg) at 28V | 27 W | 27 W | 27 W | 27 W |
| Test Frequency | 880 MHz | 880 MHz | 880 MHz | 880 MHz |
| Power Gain | 20.2 dB | 20.2 dB | 20.2 dB | 20.2 dB |
| Drain Voltage (Test) | 28 V | 28 V | 28 V | 28 V |
| VDS Max Rating | 68 V | 68 V | 68 V | 68 V |
| Lifecycle Status | Last-Time-Buy | Active (successor) | Active (successor) | Last-Time-Buy (predecessor same die) |
주요 차별점
- Direct NXP-issued successor with enhanced die (vs MRFE6S9125NBR1)
- 20.2 dB broadband gain eliminates driver stage (vs MRF6S9160HR3 (160 W higher-power part))
- Broadband 865-960 MHz coverage in a single part (vs Narrow-band competing LDMOS parts)
설계 노트
The TO-272 WB-4 ceramic package is designed for direct bolt-down mounting to a copper or aluminum heatsink/spreader. Apply a thin, uniform layer of thermal compound (e.g. Wakefield-Vette 120-2 or equivalent) between the package flange and the heatsink, and torque the mounting screws to the datasheet-specified value (typically 8-10 in-lb for TO-272) to minimize thermal resistance. For continuous 27 W RF output at 28 V, expect roughly 20-30 W of DC dissipation in a typical PA; heatsink sizing must keep case temperature below 100 C to avoid derating.
Although the part is flange-mounted, the gate and drain leads still require a printed-circuit landing pattern for bias injection and RF matching. Use a low-loss substrate (Rogers RO4350B or RO4003C) for the matching network area to preserve the broadband 865-960 MHz response. Keep gate and drain traces short, with 50 ohm microstrip or stripline transitions. Place DC-blocking capacitors and gate-bias chokes as close to the lead exits as physically possible to minimize parasitic loop area.
Do not exceed the 68 V VDS maximum rating, including transient overshoot from load mismatch. The MRF6S9125NBR1 is rugged for an LDMOS device but VSWR exceeding 10:1 at full output can still cause instantaneous VDS excursions that exceed the rating. Add a drain-side clamp or over-voltage protection if the antenna load can be disconnected in service. Also note: the part was formally migrated to the MRFE6S9125NBR1 via NXP PCN12895 - confirm with NXP before committing to long-production runs of the MRF6S9125NBR1.
규정 준수 정보
RoHS, REACH, halogen, and conflict-minerals compliance not stated in the verified web data; flagged as 'unknown' per data authenticity rules. Lead-free is per the part's lead-free status descriptor on DigiKey. AEC-Q100 not applicable - this is a discrete RF power MOSFET, not an automotive-qualified IC.
