NCP4308DDR2G - 35V Synchronous Rectifier Controller | onsemi
부품 번호: NCP4308DDR2G ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.8493 | $0.85 |
| 10 | $0.8493 | $8.49 |
| 100 | $0.8493 | $84.93 |
| 500 | $0.8493 | $424.65 |
| 1,000 | $0.8493 | $849.30 |
NCP4308DDR2G 개요
A synchronous rectifier controller is a power-management semiconductor that drives an external MOSFET on the secondary side of an isolated or non-isolated switching converter. By replacing diode conduction with low-loss MOSFET switching, it can reduce power loss during output-current transfer. The NCP4308 family belongs to the secondary-side controller, power-management IC, and switch-mode power-supply hierarchy.
Key features include externally adjustable minimum off-time and on-time blanking periods, operation across discontinuous-conduction, continuous-conduction, and quasi-resonant flyback modes, and a 1 MHz switching-frequency capability. The controller is designed to provide reliable and low-noise operation of the synchronous-rectifier system while allowing the power stage to be tailored to the transformer, MOSFET, and PCB layout.
The NCP4308 architecture coordinates gate timing with the secondary-side waveform. The adjustable timing features help prevent premature MOSFET turn-on or turn-off during ringing and transition intervals. Designers must still validate the timing window against the actual transformer reset behavior, MOSFET gate charge, leakage current, and operating frequency rather than treating the timing values as universal constants.
Typical uses include AC-DC adapters, offline power supplies, flyback converters, quasi-resonant flyback converters, LLC converters, USB power supplies, and industrial power modules. In each case, the controller is paired with external synchronous-rectifier MOSFETs rather than acting as the primary-side converter controller.
A key design consideration is maintaining adequate separation between the controller and high-current secondary-side switching nodes. Use the manufacturer’s recommended layout, minimize gate-loop area, place timing components close to their pins, and verify dead time, ringing, and cross-conduction behavior with an oscilloscope across the full input and load range.
드롭인 대체품: NCP4308DDR2G — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
NCP4308AMTTWG
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
NCP4308DDR2G 최대 정격 & 전기적 특성
| Product Type | Secondary-side synchronous rectifier controller |
| Operating Voltage Range | 4 V to 35 V |
| 스위칭 주파수 | 1 MHz |
| Current Rating | 8 A |
| 대기 전류 | 2 mA |
| Propagation Delay | 12 ns |
| Minimum Off-Time | 50 ns |
| Adjustable On-Time Blanking | 245 ns |
| Input Voltage Minimum | 4 V |
| Input Voltage Maximum | 35 V |
| 동작 온도 범위 | -40 °C to +125 °C |
| Supported Operating Modes | DCM, CCM, and quasi-resonant flyback |
| Supported Power-Supply Topologies | Flyback, quasi-resonant flyback, and LLC |
| 패키지 | SOIC-8 |
| 실장 유형 | Surface mount |
| Moisture Sensitivity Level | MSL3 |
| RoHS 상태 | Compliant |
NCP4308DDR2G soic-8 핀 구성 가이드
NCP4308DDR2G(soic-8 패키지)의 핀 구성입니다. 이 전력 소자는 게이트, 드레인, 소스 단자를 갖추고 있습니다. 비편향 패키지의 경우 정확한 핀 1 방향과 풋프린트 세부 정보는 제조사 데이터시트를 참조하십시오. 일반적인 응용 분야로는 전원 공급 장치 설계, 모터 구동, 부하 스위칭이 있습니다.
다음에 대한 상세 핀아웃 데이터 없음: NCP4308DDR2G.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
NCP4308DDR2G 적합 용도: 6 애플리케이션s: AC-DC Flyback Adapter, Quasi-Resonant Flyback Converter, LLC Resonant Power Supply, USB Power Adapter, Industrial Power Module, Low-Voltage DC/DC Output Stage.
AC-DC Flyback Adapter
The NCP4308DDR2G fits the secondary side of an offline flyback adapter where a controller replaces a rectifier diode with externally controlled MOSFETs. Its 4 V to 35 V range covers a broad secondary-bias domain, while adjustable minimum off-time and on-time blanking help separate gate commands from switching-node ringing. The 1 MHz controller capability supports compact high-frequency designs, although the actual primary frequency is set elsewhere. Engineers should size the MOSFETs for the transformer current, verify dead time in DCM, CCM, and quasi-resonant transitions, and inspect efficiency at light and full load.
추천
Quasi-Resonant Flyback Converter
The NCP4308DDR2G is suited to quasi-resonant flyback converters because the verified family data identifies QR operation and adjustable blanking functions. Resonance can produce low-voltage and high-voltage intervals around the secondary waveform, so controlled MOSFET conduction must avoid false turn-on during ringing. Use the adjustable timing inputs to account for transformer leakage and MOSFET package characteristics. A useful design check is to capture gate-to-source voltage, drain voltage, and secondary current at startup, resonance transitions, and full load.
추천
LLC Resonant Power Supply
The NCP4308DDR2G can support secondary-side synchronous rectification in LLC converters, a topology explicitly listed by onsemi. LLC operation can have resonant current and transition intervals that differ substantially from conventional PWM, making adjustable blanking important. The controller’s 1 MHz capability and 4 V to 35 V operating range provide useful design bounds, but transformer turns ratio and MOSFET selection determine whether synchronous operation is efficient. Validate light-load behavior, burst or intermittent operation if used, and gate overlap before production.
추천
USB Power Adapter
The NCP4308DDR2G can be used in a secondary rectifier stage of a USB power adapter when low-voltage conduction loss is important. Replacing a Schottky or other rectifier with controlled MOSFETs can improve efficiency, but USB adapters may also use USB-PD or multi-output control functions that are not part of this IC. The synchronous rectifier must be coordinated with the converter’s secondary waveform and timing. Use low-inductance gate routing and verify cable transients, load steps, standby behavior, and fault shutdown at the adapter level.
추천
Industrial Power Module
The NCP4308DDR2G is appropriate for an industrial power module that needs a dedicated secondary-side synchronous-rectifier controller across multiple input or output conditions. Its listed operating-temperature range of -40 °C to +125 °C is relevant to industrial environments, although the external MOSFETs, transformer, magnetics, and enclosure determine the actual thermal margin. The 2 mA quiescent current can help with auxiliary-power budgeting. Validate the controller across worst-case line, load, temperature, and startup conditions rather than relying on nominal specifications.
추천
Low-Voltage DC/DC Output Stage
The NCP4308DDR2G can be evaluated in a low-voltage DC/DC output stage when the secondary rectifier current is substantial and diode loss becomes important. The controller’s synchronous operation may reduce rectification loss, but the benefit depends on MOSFET RDS(on), gate-drive overhead, body-diode behavior, and timing losses. Because the IC is a secondary-side controller, it must be paired with an appropriate transformer or converter arrangement. Measure efficiency at several loads and compare against a diode solution before committing the design.
추천
엔지니어링 참조 데이터: NCP4308DDR2G — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | NCP4308AMTTWG |
|---|---|---|
| Product Type | Secondary-side synchronous rectifier controller | NCP4308-family controller; exact product type details not supplied |
| Package | SOIC-8 | WDFN-8; package compatibility not confirmed |
| Brand | onsemi | onsemi |
주요 차별점
- Supports flyback, quasi-resonant flyback, and LLC secondary rectification (vs NCP4308AMTTWG)
- Adjustable blanking supports flexible MOSFET package and layout options (vs NCP4308AMTTWG)
- Broad operating range for secondary bias (vs NCP4308AMTTWG)
- SOIC-8 package is confirmed for the DDR2G ordering code (vs NCP4308AMTTWG)
설계 노트
Keep the NCP4308DDR2G, its timing components, and the MOSFET gate-drive traces close together. Minimize gate-loop area and route the gate and source-return paths as a compact pair. Place supply bypassing at the controller pins and keep the controller ground connection away from the high-current secondary switching loop. Validate the physical layout against the onsemi datasheet recommendations before production.
Do not select the NCP4308DDR2G by its 8 A capability without checking the complete power stage. Transformer current, MOSFET RDS(on), body-diode behavior, gate charge, thermal rise, and layout inductance determine realistic output capability. Also verify that the adjustable blanking timing does not overlap the intended secondary conduction interval; incorrect timing can increase loss or create cross-conduction.
The controller IC is not the main thermal element in most designs; the synchronous MOSFETs and transformer usually dominate heat generation. Estimate MOSFET conduction loss from RDS(on), RMS current, and duty ratio, then include switching and body-diode loss where applicable. Provide copper area, thermal vias, and adequate package airflow according to the MOSFET datasheet and enclosure temperature.
Synchronous rectification can reduce diode loss but may increase high-frequency EMI when MOSFET gate transitions are fast or rings on the switching node. Use the smallest practical gate resistance, maintain short gate loops, and inspect drain-to-source ringing with a low-inductance probe. Adjust blanking and switching timing only after confirming that EMI and efficiency measurements use comparable test conditions.
규정 준수 정보
RoHS compliance is identified in the verified JLCPCB listing. The supplied data does not independently verify REACH, AEC-Q100, lead-free, halogen-free, or conflict-minerals status.
