PIC24FV16KA302-E/ML - 16KB Flash 16-bit XLP MCU | Microchip
부품 번호: PIC24FV16KA302-E/ML ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $3.07 | $30.70 |
| 100 | $2.69 | $269.00 |
| 500 | $2.43 | $1,215.00 |
| 1,000 | $2.18 | $2,180.00 |
PIC24FV16KA302-E/ML 개요
A PIC24F microcontroller is a 16-bit Harvard-architecture MCU built around the PIC24 instruction set, which combines deterministic interrupt response, DSP-oriented instructions, and on-chip peripherals such as 12-bit ADC, comparators, RTCC, UART/SPI/I2C, and USB-capable derivatives. PIC24F devices sit between 8-bit PIC16/PIC18 parts and 32-bit PIC32 parts, targeting applications that need higher computational throughput than 8-bit cores but very low active and sleep currents. The 'FV' prefix designates the wide-Vdd 1.8-5.5 V variant, while 'XLP' denotes Microchip's nanoWatt technology, including Deep Sleep with retention RTCC, DSBOR and DSWDT that keep supervising peripherals running while the core is halted.
Key features include 32 MHz / 16 MIPS operation from an internal oscillator, 12-bit ADC with CTMU support, multiple serial interfaces (I2C, SPI, UART, IrDA, LIN), 5 V tolerant I/O, and ultra-low deep-sleep currents in the nanoamp range. The device also integrates a hardware RTCC, configurable timer modules, and dual 3-pin analog comparators that remain functional during deep sleep.
Typical applications include battery-powered IoT sensor nodes, portable medical monitors, e-paper / wearable displays, energy-harvesting nodes, automotive LIN slaves, and remote controls where quiescent current in the sub-microamp range is critical. The 28-QFN footprint also suits space-constrained designs.
When designing with this part, plan the unused I/O strategy early, since 23 of the 28 pins are bonded out. For lowest deep-sleep current, disable unused peripherals, switch the system clock to LPRC, and configure RTCC-alarm wake-up rather than periodic WDT wake-up. The '-E' suffix denotes the -40C to +125C extended temperature grade, suitable for industrial and automotive underhood environments.
드롭인 대체품: PIC24FV16KA302-E/ML — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: PIC24FV16KA302-E/ML (동일 폼 팩터 및 풋프린트) — 차이점: Package, ADC, Program Memory (Flash), Operating Temperature, I/O Pins.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
PIC24F16KA302-I/ML
✅ 드롭인✓ 재고 있음
$1.95 / 개
데이터시트 보기 →PIC24FV16KA302-I/ML
✅ 드롭인✓ 재고 있음
$2.04 / 개
데이터시트 보기 →PIC24FV32KA302-I/ML
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$2.71 / 개
데이터시트 보기 →PIC24FV16KA301-I/P
✅ 드롭인✓ 재고 있음
$1.6 / 개
데이터시트 보기 →PIC24FV16KA301-E/P
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$2.5 / 개
데이터시트 보기 →PIC24FV16KA302-E/ML 최대 정격 & 전기적 특성
| Family | PIC24F XLP |
| Core | 16-bit PIC24F Harvard |
| Program Memory (Flash) | 16 KB (5.5K x 24) |
| SRAM | 2 KB |
| EEPROM | 512 B |
| Maximum CPU Speed | 32 MHz / 16 MIPS |
| Operating Voltage (Vdd) | 1.8 V to 5.5 V |
| I/O Pins | 23 |
| ADC | 12-bit |
| 패키지 | 28-pin QFN (6x6 mm) |
| 실장 유형 | Surface Mount |
| 동작 온도 | -40C to +125C (E = extended) |
| Communication Interfaces | I2C, SPI, UART/USART, IrDA, LIN |
| Peripherals | CTMU, RTCC, comparators, DSBOR, DSWDT |
| RoHS 상태 | Compliant |
PIC24FV16KA302-E/ML 핀 구성
| 핀 1 | RB14 — PORTB I/O or analog AN14 |
| 핀 2 | RA0 — PORTA I/O |
| 핀 3 | RA1 — PORTA I/O |
| 핀 4 | RB0 — PORTB I/O or PGED1 |
| 핀 5 | RB1 — PORTB I/O or PGEC1 |
| 핀 6 | RB2 — PORTB I/O |
| 핀 7 | RB3 — PORTB I/O |
| 핀 8 | Vss — Ground |
| 핀 9 | RA2 — PORTA I/O |
| 핀 10 | RA3 — PORTA I/O |
| 핀 11 | RB4 — PORTB I/O |
| 핀 12 | RB5 — PORTB I/O |
| 핀 13 | RB6 — PORTB I/O |
| 핀 14 | RB7 — PORTB I/O |
| 핀 15 | Vdd — Positive supply (1.8-5.5 V) |
| 핀 16 | RA4 — PORTA I/O |
| 핀 17 | RA5 — PORTA I/O |
| 핀 18 | RA6 — PORTA I/O |
| 핀 19 | RA7 — PORTA I/O |
| 핀 20 | RB8 — PORTB I/O |
| 핀 21 | RB9 — PORTB I/O |
| 핀 22 | RB10 — PORTB I/O |
| 핀 23 | RB11 — PORTB I/O |
| 핀 24 | RB12 — PORTB I/O or AN12 |
| 핀 25 | RB13 — PORTB I/O or AN13 |
| 핀 26 | RB15 — PORTB I/O or AN15 |
| 핀 27 | AVss — Analog ground |
| 핀 28 | AVdd — Analog supply (1.8-5.5 V) |
일반적인 애플리케이션
PIC24FV16KA302-E/ML 적합 용도: 6 애플리케이션s: Battery-Powered IoT Sensor Nodes, Portable Medical Monitors, Automotive LIN Bus Slaves, Industrial Data Loggers, E-Paper Wearable Displays, Energy Harvesting Wireless Switches.
Battery-Powered IoT Sensor Nodes
The PIC24FV16KA302-E/ML is engineered for battery-powered IoT sensor nodes, where its XLP Deep Sleep draws less than 1 uA with RTCC retention while the 1.8-5.5 V Vdd accepts direct single-cell Li-ion or 2x AA alkaline stacks. The 12-bit ADC with CTMU enables resistive/capacitive measurement (thermistors, soil-moisture, touch buttons) without an external analog front-end, and 23 GPIO drive LED indicators or e-paper display update logic. Quantified benefit: at 32 MHz active and ~1.5 mA typical Idd, a node that wakes every 5 minutes for 50 ms achieves a sleep/active duty ratio of ~99.97%, stretching a 2200 mAh Li-SOCl2 cell to over 10 years of operation. The 28-QFN footprint drops onto a 6x6 mm sensor puck layout.
추천
Portable Medical Monitors
Portable medical monitors such as pulse oximeters, glucose meters, and wearable patches benefit from the PIC24FV16KA302-E/ML's nanoamp-class Deep Sleep and wide-Vdd 1.8-5.5 V tolerance. The CTMU provides constant-current excitation for impedance-based glucose or SpO2 measurement, while the 12-bit ADC captures photodiode output from the optical sensor front-end with adequate resolution. Quantified benefit: the part's hardware RTCC maintains accurate wall-clock timestamps across long sleep intervals, eliminating periodic RTC calibrations on the application side. The -40C to +125C extended grade handles body-proximate thermal environments in disposable enclosures, and the 28-QFN footprint enables miniaturization toward the 25x15 mm wearable form factor demanded by modern adhesive patch designs.
추천
Automotive LIN Bus Slaves
In automotive LIN bus slave nodes (window lifters, seat controllers, mirror switch panels), the PIC24FV16KA302-E/ML's integrated LIN physical-layer support and -40C to +125C extended temperature grade meet the AEC-Q100-equivalent harsh-environment requirements typical of underhood LIN clusters. The 16 KB program space is enough to run Microchip's LIN stack 2.x with a small application layer, and the 23 I/O pins can directly drive relays, LED indicators, and H-bridge enable lines. Quantified benefit: switching to Deep Sleep between LIN frames draws under 1 uA, helping a sensor cluster meet the typical 100 uA quiescent-current budget allocated by the body control module. The 28-QFN package with exposed thermal pad supports the 105C continuous underhood operating envelope demanded by SAE J2602 LIN node specifications.
추천
Industrial Data Loggers
For industrial temperature/humidity data loggers, the PIC24FV16KA302-E/ML provides the right blend of EEPROM parameter storage (512 B for calibration constants and log book-keeping), 12-bit ADC channels for analog sensor inputs, and battery-friendly deep sleep. The wide Vdd range (1.8-5.5 V) supports both 3.6 V Li-Thionyl chloride primary cells and 5 V USB supplies during configuration. Quantified benefit: with a 4 Hz ADC sampling wake-up rate and 200 ms active time per sample, the MCU consumes ~140 uA-hours per day, enabling a 5-year field deployment from a single D-cell lithium primary. The 23 I/O pins accommodate LCD segment control, SD card SPI interface, and external EEPROM page selection without needing an I/O expander.
추천
E-Paper Wearable Displays
The PIC24FV16KA302-E/ML suits battery-powered e-paper wearable displays (fitness bands, smart badges, smart watches) thanks to its nanoamp-class sleep current, wide Vdd range, and 16 KB Flash sufficient to drive a small partial-update e-paper display controller. The I2C and SPI interfaces connect directly to e-paper driver ICs and motion sensors, and the 23 GPIO allow push-button and capacitive touch handling. Quantified benefit: a wearable that wakes every 30 seconds to update a heart-rate display consumes under 30 uA average, allowing a 100 mAh Li-Po cell to last approximately 14 days on a single charge. The 28-QFN 6x6 mm package fits inside the 30x30 mm PCB of a typical wearable badge form factor without forcing a layout rework.
추천
Energy Harvesting Wireless Switches
For self-powered wireless light switches, HVAC controls, and remote control buttons, the PIC24FV16KA302-E/ML's nanoamp-class deep sleep combined with the 1.8-5.5 V wide Vdd makes it ideal for direct connection to energy-harvesting piezo or photovoltaic elements. The integrated CTMU can be used to charge a small supercapacitor via constant-current biasing, and the on-chip RTCC provides debounce timing for the harvested pulse event. Quantified benefit: a 50 uJ piezo harvest event provides enough energy to wake the part, transmit a single sub-1 GHz packet, and return to deep sleep, enabling a fully battery-free switch design. The 28-QFN (6x6 mm) footprint fits behind a standard European wall-switch mounting plate with no PCB rework required.
추천
추천 제품 요약
엔지니어링 참조 데이터: PIC24FV16KA302-E/ML — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | PIC24F16KA302-I/ML | PIC24FV16KA302-I/ML | PIC24FV32KA302-I/ML | PIC24FV16KA301-I/P | PIC24FV16KA301-E/P |
|---|---|---|---|---|---|---|
| Package | 28-QFN (6x6) | 28-QFN (6x6) - same | 28-QFN (6x6) - same | 28-QFN (6x6) - same | 20-DIP - different package | 20-DIP - different package |
| Brand | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Flash Program Memory | 16 KB | 16 KB | 16 KB | 32 KB | 16 KB | 16 KB |
| Operating Voltage (Vdd) | 1.8-5.5 V | 1.8-3.6 V | 1.8-5.5 V | 1.8-5.5 V | 1.8-5.5 V | 1.8-5.5 V |
| Operating Temperature | -40C to +125C (E) | -40C to +85C (I) | -40C to +85C (I) | -40C to +85C (I) | -40C to +85C (I) | -40C to +125C (E) |
| I/O Pins | 23 | 23 | 23 | 23 | 18 | 18 |
| Maximum CPU Speed | 32 MHz / 16 MIPS | 32 MHz / 16 MIPS | 32 MHz / 16 MIPS | 32 MHz / 16 MIPS | 32 MHz / 16 MIPS | 32 MHz / 16 MIPS |
| SRAM / EEPROM | 2 KB / 512 B | 2 KB / 512 B | 2 KB / 512 B | 2 KB / 512 B | 2 KB / 512 B | 2 KB / 512 B |
주요 차별점
- Extended -40C to +125C temperature grade in a 28-QFN package (vs PIC24FV16KA302-I/ML)
- Same 28-QFN footprint but 1.8-5.5 V wide Vdd (vs PIC24F16KA302-I/ML)
- Pin-compatible upgrade path to 32 KB Flash (vs PIC24FV32KA302-I/ML)
설계 노트
For minimum deep-sleep current on PIC24FV16KA302-E/ML, switch the system clock to LPRC (32 kHz internal) before executing the PWRSAV #0 instruction, disable unused peripherals via PMD registers, and route wake-up through the RTCC alarm rather than periodic WDT. With these settings the datasheet specifies Deep Sleep currents below 1 uA even with RTCC running. Avoid leaving an unconfigured ADC module powered up; the PMD1 ADC bit must be set.
The 28-QFN package exposes a thermal pad on its underside which must be soldered to a continuous copper pour of at least 1 square cm to keep theta_JA near 32 J/kg per QFN layout convention. Estimated junction rise at 32 MHz active current of ~10 mA and 3.3 V supply is negligible (<1 C), but the extended -40C to +125C grade requires proper cold-start RC network on MCLR to avoid POR misbehavior at -40C.
Place the 0.1 uF Vdd-to-Vss decoupling capacitor within 3 mm of the Vdd pin and an identical one on AVdd. Route AVcc from Vdd via an RC/ferrite bead filter (10 ohm + 0.1 uF) to keep digital switching noise out of the analog supply rail that feeds the ADC. Keep the SOSC crystal traces short and symmetric; long traces increase jitter and degrade RTCC accuracy.
Do not assume the I/O are 5 V tolerant at all Vdd; the datasheet specifies 5 V tolerance down to Vdd=3.0 V, but at Vdd=1.8 V the inputs only tolerate up to Vdd+0.3 V. Misusing 5 V logic into a 1.8 V Vdd pin will engage the ESD clamp and degrade ADC readings. Also note that pins RB0/RB1 double as PGEC1/PGED1 programming pins, so leaving them as inputs during programming can lead to debugger handshake failures.
규정 준수 정보
Extended -40C to +125C temperature grade makes the E variant a common choice for AEC-Q100 customer-specific qualification flows, but the part itself is not AEC-Q100 listed by Microchip. RoHS compliant per Microchip product page; halogen-free per document device.
