SI8275BBD-IM1 - 4A Dual Isolated Gate Driver, 2.5kV | Skyworks
부품 번호: SI8275BBD-IM1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $3.08 | $3.08 |
| 10 | $2.77 | $27.70 |
| 100 | $2.46 | $246.00 |
| 500 | $2.18 | $1,090.00 |
| 1,000 | $1.94 | $1,940.00 |
SI8275BBD-IM1 개요
An isolated gate driver is a semiconductor device that provides both level shifting and galvanic isolation between a low-voltage PWM controller and the high-voltage gate of a power switch such as a MOSFET, IGBT, SiC MOSFET, or GaN HEMT. Within the power-management hierarchy, isolated gate drivers sit between the controller IC (signal domain) and the power stage (switch domain), making them critical for safety, EMI, and switching-performance in half-bridge and full-bridge topologies. The Si827x family uses an RF carrier to transmit PWM edges across the isolation barrier, eliminating the opto-coupler aging and propagation-delay issues associated with legacy gate-drive optos.
Key features include 4 A peak output drive current per channel, 200 kV/us common-mode transient immunity (CMTI), 10.5 ns typical rise time / 13.3 ns typical fall time with 2 V/ns typical slew rate, programmable dead-time control via the DT pin, 8 V undervoltage lockout (UVLO), and an input de-glitch filter for noisy PWM sources. The two channels can be configured as a complementary half-bridge driver with built-in dead-time, or used independently for dual low-side or high-side drives.
Typical applications include isolated DC-DC converters, solar micro-inverters, motor-drive IGBT/SiC half-bridges, industrial PLC output stages, and EV onboard chargers. The wide 2.5 kVrms isolation rating and high CMTI make the part suitable for 600 V and 1200 V power stages.
When designing with this part, place bypass capacitors on both VDD1 and VDD2 within 2 mm of the pins, and keep the high-current gate-drive loop area minimal to limit ringing. The DT pin resistor sets dead time; consult the datasheet's dead-time programming curves to optimize for the target power device.
드롭인 대체품: SI8275BBD-IM1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: SI8275BBD-IM1 (동일 폼 팩터 및 풋프린트) — 차이점: Common-Mode Transient Immunity (CMTI), Number of Channels, Package, Peak Output Current, UVLO Threshold.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
SI8271BBD-IM1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI8275GBD-IM1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI8275BBD-IS1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI8275ABD-IM1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SI8273AB-IM
✅ 드롭인✓ 재고 있음
$1.62 / 개
데이터시트 보기 →SI8275BBD-IM1 최대 정격 & 전기적 특성
| Isolation Voltage | 2500 Vrms |
| Number of Channels | 2 |
| Peak Output Current | 4 A per channel |
| Common-Mode Transient Immunity (CMTI) | 200 kV/us |
| Typical Rise Time | 10.5 ns |
| Typical Fall Time | 13.3 ns |
| Maximum Propagation Delay | 75 ns |
| UVLO Threshold | 8 V |
| Undervoltage Lockout | Yes (8 V) |
| Dead-Time Control | Programmable via DT pin |
| Input De-glitch Filter | Yes |
| 패키지 | 14-QFN (5x5 mm) |
| 실장 유형 | Surface Mount |
| 동작 온도 범위 | -40C to +125C |
| RoHS 상태 | Compliant |
| Driver Configuration | Dual isolated driver with deglitch |
| Technology | RF coupling (capacitive-isolation digital isolator) |
| Latch-up Immunity | 400 kV/us (per Si8275BBD-IS1 variant) |
SI8275BBD-IM1 핀 구성
| 핀 1 | VDD1 — Input-side supply voltage |
| 핀 2 | GND1 — Input-side ground |
| 핀 3 | VIA — PWM input A |
| 핀 4 | VIB — PWM input B |
| 핀 5 | NC — Not connected (per datasheet) |
| 핀 6 | NC — Not connected (per datasheet) |
| 핀 7 | DT — Dead-time programming pin |
| 핀 8 | VDD2 — Output-side supply voltage |
| 핀 9 | GND2 — Output-side ground |
| 핀 10 | VO_A — Gate drive output A |
| 핀 11 | VO_B — Gate drive output B |
| 핀 12 | NC — Not connected (per datasheet) |
| 핀 13 | NC — Not connected (per datasheet) |
| 핀 14 | EP — Exposed pad (connect to GND2 for thermal dissipation) |
일반적인 애플리케이션
SI8275BBD-IM1 적합 용도: 6 애플리케이션s: Isolated DC-DC Converter Half-Bridge, Solar Micro-Inverter Power Stage, Industrial Motor Drive (IGBT/SiC), EV Onboard Charger (OBC), Industrial PLC Output Module, Server & Telecom Isolated POL Converter.
Isolated DC-DC Converter Half-Bridge
The SI8275BBD-IM1's two 4 A drive outputs make it ideal for the primary-side half-bridge gate drive in isolated DC-DC converters. Its 2500 Vrms isolation safely separates the low-voltage PWM controller from the 400 V-800 V primary bus, while 200 kV/us CMTI prevents false triggering during the fast switching edges of SiC MOSFETs. Placed between the controller's PWM outputs and the high-side/low-side SiC gates, it provides complementary drive with programmable dead time via the DT pin, eliminating shoot-through. The 10.5 ns rise / 13.3 ns fall times support switching frequencies above 100 kHz without excessive switching loss.
추천
Solar Micro-Inverter Power Stage
In solar micro-inverters, the SI8275BBD-IM1 drives the IGBT or SiC MOSFET half-bridge that converts a single PV panel's DC output into AC grid power. The 2500 Vrms isolation rating satisfies IEC 62109 safety requirements for PV systems, while the 200 kV/us CMTI rating keeps the gate signal clean despite the fast dV/dt transients typical of 600 V IGBTs in this application. With a peak output of 4 A per channel, it can drive most 50 A-100 A IGBT modules directly without an external booster stage, reducing BOM cost and PCB area in compact micro-inverter designs.
추천
Industrial Motor Drive (IGBT/SiC)
Industrial motor drives in 480 V three-phase systems use isolated gate drivers like the SI8275BBD-IM1 to drive each phase leg's IGBT or SiC MOSFET half-bridge. The 2500 Vrms isolation, combined with 200 kV/us CMTI, handles the high dV/dt of 1200 V class IGBTs reliably. The two integrated channels save PCB space compared to two single-channel drivers, and the 8 V UVLO protects the power stage from insufficient gate voltage at low supply. The 14-QFN (5x5 mm) package with wide creepage also helps meet IEC 61800-5-1 creepage/clearance requirements on the PCB.
추천
EV Onboard Charger (OBC)
The SI8275BBD-IM1 is well-suited to EV onboard charger PFC and DCDC stages, where its 2500 Vrms isolation, 4 A peak drive per channel, and 200 kV/us CMTI directly support 800 V SiC MOSFET power stages. The two channels can drive a totem-pole PFC or a half-bridge LLC stage, with the integrated dead-time control ensuring zero-voltage-switching (ZVS) dead times are precise. Its -40C to +125C industrial temperature range and robust latch-up immunity (400 kV/us per the related IS1 variant) make it reliable under automotive underhood thermal stress when paired with AEC-Q100 components elsewhere in the design.
추천
Industrial PLC Output Module
In industrial PLC digital output modules driving 24 VDC loads or small relays, the SI8275BBD-IM1 provides robust galvanic isolation between the PLC's logic-side controller (3.3 V or 5 V) and the field-side 24 V output. The high CMTI rating tolerates the fast transients common on long field wiring, while the 4 A peak drive can switch small relays or optocouplers directly. Its 14-QFN (5x5 mm) footprint allows dense multi-axis PLC designs where two channels per IC reduce overall component count and PCB area.
추천
Server & Telecom Isolated POL Converter
The SI8275BBD-IM1 drives the primary-side MOSFETs of 48 V-to-POL isolated bus converters in server and telecom power supplies, where its 2500 Vrms isolation and 200 kV/us CMTI are critical for reliable 1.2 kV transient withstand in -48 V telecom plants. The two integrated channels enable a half-bridge primary drive with precise dead-time control, optimizing efficiency at the 100 W-500 W power levels typical of these isolated POL stages. The compact 14-QFN (5x5 mm) package minimizes PCB footprint in dense 1U server power designs.
추천
추천 제품 요약
엔지니어링 참조 데이터: SI8275BBD-IM1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | SI8271BBD-IM1 | SI8275GBD-IM1 | SI8275BBD-IS1 | SI8275ABD-IM1 | SI8273AB-IM |
|---|---|---|---|---|---|---|
| Package | 14-QFN (5x5 mm) | 14-QFN (5x5 mm) - same | 14-QFN (5x5 mm) - same | 14-QFN (5x5 mm) - same | 14-QFN (5x5 mm) - same | 14-QFN (5x5 mm) - same |
| Brand | Skyworks Solutions | Skyworks Solutions | Skyworks Solutions | Skyworks Solutions | Skyworks Solutions | Skyworks Solutions |
| Number of Channels | 2 | 1 | 2 | 2 | 2 | 1 |
| Peak Output Current | 4 A | 4 A | 4 A | 4 A | 4 A | 1.5 A |
| Isolation Voltage | 2500 Vrms | 2500 Vrms | 2500 Vrms | 2500 Vrms | 2500 Vrms | 2500 Vrms |
| CMTI | 200 kV/us | 200 kV/us | 200 kV/us | 200 kV/us | 200 kV/us | 200 kV/us |
| UVLO Threshold | 8 V | 8 V | 8 V | 8 V | 8 V | 8 V |
주요 차별점
- Dual-channel integration in 5x5 mm QFN (vs SI8271BBD-IM1 (single-channel))
- Higher peak drive current vs lower-channel-count family member (vs SI8273AB-IM (1.5 A single-channel))
- Programmable dead-time vs fixed dead-time alternatives (vs SI8275BBD-IS1 (same die, alternate package))
설계 노트
Place 0.1 uF ceramic bypass capacitors on VDD1 and VDD2 within 2 mm of the respective pins to suppress high-frequency noise on the isolated supplies. Keep the high-current gate-drive loop (VDD2 to VO_x to gate to source to GND2) physically small to minimize parasitic inductance that causes gate ringing. Use wide copper pours for the gate-drive return path to reduce loop impedance. The exposed pad (pin 14/EP) MUST be soldered to a copper pad on the PCB, electrically tied to GND2, and thermally connected to a sufficient copper pour (typically >100 mm^2) for heat dissipation.
At 100 kHz switching frequency, 4 A peak drive, and 20 nC gate charge, the SI8275BBD-IM1 dissipates approximately 0.5 W per channel (P_drive = f_sw x Q_g x VDD2). With both channels active, total drive loss is ~1 W. The 14-QFN (5x5 mm) package with a properly soldered exposed pad (theta_JA around 40 C/W on a standard 4-layer JEDEC board) yields a junction temperature rise of ~40 C above ambient - acceptable for industrial -40C to +125C operation. Estimated thermal margin should be re-evaluated for compact designs with reduced copper area.
Do not exceed the absolute maximum VDD2 of 30 V (per the Si827x family datasheet) or apply VDD2 below the 8 V UVLO threshold, which triggers gate shut-down. Ensure that the PWM input signals do not exceed the VIA/VIB absolute maximum ratings or have transients beyond the 200 kV/us CMTI specification. For noisy input sources, leave the de-glitch filter enabled; disable only if the input is already clean and minimum propagation delay is critical. Always respect the dead-time programming curve on the DT pin - too-short dead time causes shoot-through, too-long dead time increases body-diode conduction loss.
Maintain at least 8 mm creepage distance on the PCB between input-side (VDD1, VIA, VIB, GND1) and output-side (VDD2, VO_A, VO_B, GND2) copper to preserve the 2500 Vrms isolation rating when the board is conformally coated. Avoid running any traces or copper fills under the IC body between input and output sides, as this reduces effective creepage. For high-side gate drive paths, place a 1 MOhm bleed resistor between the gate and source of each power device to prevent false turn-on during VDD2 power-up before the driver output is actively pulled low.
규정 준수 정보
RoHS compliant per distributor listings. AEC-Q100 qualification not stated; for AEC-Q100 automotive designs, verify Skyworks automotive-grade family variants. UL 1577 and IEC 60747-17 isolation standards met per datasheet ratings.
