UCC27517AQDBVRQ1 - 4A/4A Automotive Low-Side Gate Driver | TI
부품 번호: UCC27517AQDBVRQ1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.15 | $1.15 |
| 10 | $1 | $10.00 |
| 100 | $0.82 | $82.00 |
| 500 | $0.68 | $340.00 |
| 1,000 | $0.55 | $550.00 |
UCC27517AQDBVRQ1 개요
A low-side gate driver is a power management IC that sits between a PWM controller or microcontroller and the gate of a MOSFET or IGBT, amplifying weak logic signals into the high peak currents needed to charge and discharge gate capacitance rapidly. Within the power electronics hierarchy, gate drivers form the critical interface layer of the power stage, directly controlling switching speed, efficiency, and EMI behavior of the power semiconductor.
Key features include the 4-A/4-A peak drive capability that minimizes switching losses in large FETs, a dual-input structure (IN+ and IN-/EN) that lets designers configure inverting or non-inverting operation, negative input voltage capability on the IN- pin, and rail-to-rail output swing. The fast propagation delay of this family enables high-frequency switching converters.
Architecturally, the UCC27517A-Q1 uses a design that inherently minimizes shoot-through current, allowing it to source and sink high peak currents into capacitive loads efficiently. The 4-V UVLO (per TI product page) ensures the output stays low until VDD is high enough to fully enhance the power switch, protecting MOSFETs from operating in the resistive region during startup.
Typical applications include automotive power-factor-correction stages, synchronous buck and boost converters, solar microinverters, motor-drive half-bridge legs, and LED drivers where MOSFETs or IGBTs require fast, robust gate drive with automotive reliability.
When designing with this part, place a low-ESR 0.1-uF ceramic capacitor directly at VDD and use a separate gate-return trace to minimize parasitic inductance in the gate loop. The dual-input pins allow polarity selection without extra inverters.
This page synthesizes distributor listings, drop-in alternative analysis, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: UCC27517AQDBVRQ1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
UCC27517DBVR
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UCC27517DBVT
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UCC27511DBVR
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UCC27519DBVR
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UCC27538DBVR
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UCC27517AQDBVRQ1 최대 정격 & 전기적 특성
| Product Type | Single-channel high-speed low-side gate driver |
| Peak Source Current | 4 A |
| Peak Sink Current | 4 A |
| VDD Supply Range | up to 20 V |
| UVLO Threshold | 4 V |
| Input Configuration | Dual input (IN+ and IN-/EN), inverting or non-inverting |
| Negative Input Voltage Capability | Yes |
| Output Swing | Rail-to-rail |
| Driven Devices | MOSFET, IGBT |
| Qualification | AEC-Q100 (automotive) |
| 패키지 | SOT-23-5 (DBV) |
| 실장 유형 | Surface Mount |
| Channel Count | 1 |
UCC27517AQDBVRQ1 핀 구성
| 핀 1 | IN+ — Non-inverting input (dual-input structure) |
| 핀 2 | GND — Ground reference |
| 핀 3 | IN-/EN — Inverting input / enable (dual-function, negative voltage capable) |
| 핀 4 | OUT — Gate-drive output (4-A source / 4-A sink, rail-to-rail) |
| 핀 5 | VDD — Supply input, up to 20 V, with 4-V UVLO |
일반적인 애플리케이션
UCC27517AQDBVRQ1 적합 용도: 6 애플리케이션s: Automotive Power Factor Correction (PFC), Synchronous Buck / Boost DC-DC Converters, Motor Drive Half-Bridge Legs, Solar Microinverter and Power Conversion, Automotive LED Headlight Drivers, Telecom and Industrial Auxiliary Power Supplies.
Automotive Power Factor Correction (PFC)
In automotive onboard chargers and DC-DC front ends, the UCC27517AQDBVRQ1 drives the boost MOSFET of the PFC stage. Its 4-A/4-A peak currents shorten the Miller plateau, cutting switching losses at the 65-140 kHz switching frequencies typical of PFC circuits, while the 4-V UVLO prevents the FET from entering the linear region during startup when VDD is still ramping. The AEC-Q100 qualification and robust dual-input structure (with negative-voltage tolerance on IN-) make it well suited to the harsh electrical transients of automotive 12-V and 48-V rails. Place the driver close to the FET with a 0.1-uF VDD capacitor to keep the gate loop inductance low and limit ringing under high dv/dt.
추천
Synchronous Buck / Boost DC-DC Converters
For high-current synchronous converters, the UCC27517AQDBVRQ1 drives the control or synchronous FET gate where fast switching directly determines efficiency. The rail-to-rail 4-A sink current discharges gate charge rapidly at turn-off, minimizing shoot-through in half-bridge legs, while 4-A source current shortens turn-on transitions at switching frequencies of several hundred kHz. Its tiny SOT-23-5 footprint fits tight power-stage layouts typical of automotive power modules. Because the dual-input structure permits inverting or non-inverting configuration, designers can match PWM polarity without extra logic gates. Verify thermal and peak-current fit by computing Qg x fsw versus drive capability, and keep separate power and gate-return grounds to avoid ground-bounce induced false switching.
추천
Motor Drive Half-Bridge Legs
Low-voltage automotive and industrial motor drives use the UCC27517AQDBVRQ1 to drive low-side MOSFETs in half-bridge and three-phase power stages. The 4-V UVLO guarantees both devices stay off during supply brownouts, while the negative input voltage capability of the IN- pin improves immunity to the gate ringing and ground lift that occur during hard-switched inverter operation. The fast propagation characteristics support the 20-kHz-plus PWM frequencies common in BLDC and PMSM drives, and the AEC-Q100 grade suits electric-vehicle pump, fan, and actuator drives. Layout practice: keep gate traces short, add a small gate resistor (2-10 ohms) to control dv/dt and EMI, and route the gate return directly to the FET source Kelvin connection.
추천
Solar Microinverter and Power Conversion
In solar microinverters and string optimizers, the UCC27517AQDBVRQ1 drives MOSFETs in flyback or boost stages operating at high frequency, where 4-A/4-A peak drive reduces switching losses and improves conversion efficiency. The dual-input structure simplifies polarity matching with common flyback PWM controllers, and rail-to-rail output ensures the full VDD swing reaches the gate for minimum Rds(on). Its SOT-23-5 package supports the high-density layouts required in module-integrated electronics, while the wide 20-V VDD ceiling accommodates gate rails optimized for different FET generations. Designers should confirm peak-current adequacy against total gate charge at the chosen switching frequency, typically 100 kHz to 1 MHz in these products.
추천
Automotive LED Headlight Drivers
High-power automotive LED headlights use buck or boost LED drivers where the low-side switching FET needs robust, fast gate drive; the UCC27517AQDBVRQ1 provides 4-A/4-A capability in a compact footprint suited to dense lamp-driver PCBs. The AEC-Q100 qualification meets the reliability requirements of exterior lighting, and the 4-V UVLO protects the LED string from uncontrolled current during supply transients such as load dump conditions downstream. Fast switching keeps PWM dimming edges sharp, supporting the high dimming ratios demanded by adaptive driving beam systems. Use a small series gate resistor to tune EMI, and ensure the VDD rail is well decoupled to survive the transients typical of automotive lighting harnesses.
추천
Telecom and Industrial Auxiliary Power Supplies
Isolated auxiliary supplies in telecom rectifiers and industrial power systems use flyback or forward topologies where the UCC27517AQDBVRQ1 drives the primary MOSFET. The up-to-20-V VDD range supports both standard 12-V and optimized gate rails, and the 4-A peak currents enable efficient switching of large gate-charge FETs chosen for low conduction loss. Its compact SOT-23-5 package allows the driver to sit within millimeters of the transformer-side FET even in dense boards. Although this variant is automotive qualified, it is fully usable in industrial designs where the extra screening simply adds margin. The negative input voltage capability tolerates the noise environment of high dv/dt primary sides, reducing false-trigger risk.
추천
추천 제품 요약
엔지니어링 참조 데이터: UCC27517AQDBVRQ1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | UCC27517DBVR | UCC27517DBVT | UCC27511DBVR | UCC27519DBVR | UCC27538DBVR |
|---|---|---|---|---|---|---|
| Package | SOT-23-5 (DBV) | SOT-23-5 (DBV) - same | SOT-23-5 (DBV) - same | SOT-23-5 (DBV) - same | SOT-23-5 (DBV) - same | SOT-23-5 (DBV) - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| VDD Range | up to 20 V | up to 20 V | up to 20 V | up to 20 V | up to 20 V | up to 20 V |
| Automotive Grade (AEC-Q100) | Yes (Q1) | No (commercial) | No (commercial) | No (commercial) | No (commercial) | No (commercial) |
| Driven Devices | MOSFET, IGBT | MOSFET, IGBT | MOSFET, IGBT | MOSFET, IGBT | MOSFET, IGBT | MOSFET, IGBT |
주요 차별점
- AEC-Q100 automotive qualification (vs UCC27517DBVR)
- Dual-input structure with negative voltage capability (vs UCC27538DBVR)
- Full 4-A/4-A drive in compact SOT-23-5 (vs UCC27511DBVR)
설계 노트
Keep the gate-drive loop minimal: place a 0.1-uF ceramic decoupling capacitor within 2-3 mm of the VDD pin (pin 5) and route the OUT trace (pin 4) directly to the MOSFET gate with a dedicated gate-return trace to the source Kelvin point rather than a shared power ground. Long gate loops add inductance that resonates with gate capacitance, causing ringing that can exceed gate ratings and, in half-bridges, cause parasitic turn-on via dv/dt. Follow the TI datasheet layout section for the UCC27517A-Q1.
Respect the 4-V UVLO behavior during supply sequencing: if VDD rises slowly (soft-started bias rails), the output remains disabled below the UVLO threshold, which is protective but means the power FET stays off - verify your system tolerates that delay. Also note the IN-/EN pin tolerates negative voltage spikes; still, adding a small series resistor (100 ohms-1 kohm) on inputs when driving from long logic traces improves immunity to ground bounce in noisy switching environments.
Estimated: driver dissipation is dominated by gate-charge switching losses, P = Qg x VDD x fsw (e.g., Qg = 60 nC, VDD = 12 V, fsw = 200 kHz gives ~0.14 W in the driver). The SOT-23-5 (DBV) package has a relatively high theta_JA (on the order of 200 C/W on minimal copper), so at high switching frequencies with large FETs, verify junction temperature and add copper pour under the pins to spread heat.
규정 준수 정보
AEC-Q100 qualification confirmed by TI product page (automotive grade, UCC27517A-Q1). RoHS/REACH/lead-free status not stated in provided data - verify on TI product page.
