UCC5390ECD - 10A Isolated Gate Driver, 3kVrms, 8-SOIC | TI
부품 번호: UCC5390ECD ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $2.37 | $2.37 |
| 10 | $2.1 | $21.00 |
| 100 | $1.78 | $178.00 |
| 500 | $1.52 | $760.00 |
| 1,000 | $1.29 | $1,290.00 |
| 3,000 | $1.12 | $3,360.00 |
UCC5390ECD 개요
An isolated gate driver is a critical power-management component that sits between a low-voltage control controller (microcontroller, FPGA, or DSP) and a high-voltage power transistor. It provides galvanic isolation for safety and ground-shift immunity, level-shifts logic-level PWM signals up to the gate-drive rail, and supplies the high peak currents needed to charge and discharge the transistor's input capacitance quickly. In the system hierarchy it belongs to the isolated gate driver family, which itself sits inside power-management ICs and high-voltage gate-driver subcategory.
Key specifications include a 12 V under-voltage lockout (UVLO) on the output side with bipolar supply support, propagation delay in the tens of nanoseconds range, common-mode transient immunity (CMTI) above 100 kV/us, and TTL-compatible CMOS inputs with internal pull-up/pull-down. The output stage uses a pull-up/pull-down structure capable of sourcing/sinking 10 A peak to switch large MOSFET/IGBT/SiC devices at high dV/dt, and the device supports both unipolar and bipolar gate-drive rails.
Internally, the UCC5390ECD uses TI's capacitive isolation technology combined with a high-current gate-drive output stage. The 12 V UVLO protects against partial turn-on of enhancement-mode power devices when the secondary supply is below the gate-threshold band, while the high CMTI prevents false triggering on noisy high-voltage nodes. Compared with optocoupler-based drivers, capacitive isolation eliminates LED aging effects and provides tighter timing accuracy.
Typical applications include industrial motor drives (AC induction, BLDC, servo), solar inverters and string combiners, UPS and telecom rectifiers, on-board EV chargers and traction inverters, induction heating, and high-frequency DC-DC converters using SiC or GaN switches. The wide driver voltage range supports both 12 V and 15 V gate-rail designs.
When designing with this part, observe the published layout guidelines: keep the input-side and output-side ground planes physically separated, place the bypass capacitors as close as possible to the VCC1/VCC2 pins, and ensure the creepage/clearance on the PCB meets the target isolation rating. The 8-SOIC package keeps the footprint small but provides only basic isolation, so reinforced isolation requires the wider-body DWV version.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
드롭인 대체품: UCC5390ECD — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: UCC5390ECD (동일 폼 팩터 및 풋프린트) — 차이점: Common-Mode Transient Immunity (CMTI), Operating Temperature Range, Isolation Technology, Output Configuration, Package.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
UCC5390ECDR
✅ 드롭인✓ 재고 있음
$0.81 / 개
데이터시트 보기 →UCC5390EC
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UCC5350SBD
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UCC5390E
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UCC5390ECD 최대 정격 & 전기적 특성
| Isolation Voltage Rating | 3 kVrms (basic) |
| Output Peak Source Current | 10 A |
| Output Peak Sink Current | 10 A |
| Number of Channels | 1 |
| UVLO Threshold (VCC2) | 12 V |
| Common-Mode Transient Immunity (CMTI) | >=100 kV/us (minimum) |
| Input Logic | TTL/CMOS compatible |
| 동작 온도 범위 | -40C to +125C |
| 패키지 | SOIC-8 (D) |
| Isolation Technology | Capacitive (basic isolation) |
| 출력 구성 | Single output, split OUTH/OUTL not present in -E variant |
| Approximate Body Size | 3.91 mm x 4.90 mm (SOIC-8 D) |
| RoHS 상태 | Compliant |
| AEC-Q100 Qualified | No (industrial grade) |
UCC5390ECD 핀 구성
| 핀 1 | VDD1 — Input-side supply voltage (logic) |
| 핀 2 | IN+ — Non-inverting PWM input (TTL/CMOS) |
| 핀 3 | IN- — Inverting PWM input (or tied to IN+ for non-inverting) |
| 핀 4 | GND1 — Input-side ground reference |
| 핀 5 | GND2 — Output-side gate-driver ground reference |
| 핀 6 | OUT — Gate-drive output to power FET gate |
| 핀 7 | VDD2 — Output-side gate-drive supply (with 12 V UVLO) |
| 핀 8 | NC — Not connected internally (per datasheet) |
일반적인 애플리케이션
UCC5390ECD 적합 용도: 7 애플리케이션s: Industrial Motor Drives (BLDC / Servo), Solar String Inverters and Combiner Boxes, On-Board EV Chargers and Traction Inverters, Telecom Rectifiers and UPS Systems, Induction Heating Resonant Converters, SiC and GaN-Based High-Frequency DC-DC Converters, Industrial Welding and Plasma Power Supplies.
Industrial Motor Drives (BLDC / Servo)
The UCC5390ECD's 10 A peak source/sink capability and 12 V UVLO on the output side make it a strong fit for isolated gate-drive stages in BLDC and servo motor drives, where IGBTs and MOSFETs on the inverter bus must switch tens of amps at high dV/dt. According to the TI UCC5390 datasheet, the 3 kVrms basic isolation covers ground-shift across the low-voltage control-side and the high-voltage DC-link. Placed between a microcontroller/FOC controller and the inverter bridge, the driver charges a 10 nC-class gate in under 30 ns with the 10 A peak, minimising switching loss. The capacitive-isolation core also eliminates the LED-aging problem of optocoupler drivers, extending service life in 24/7 industrial deployments.
추천
Solar String Inverters and Combiner Boxes
In solar string inverters and DC-DC converters the UCC5390ECD drives the primary-side MOSFET/SiC switches of the boost or HERIC stage where high-side drive is required. According to TI, the 10 A peak and 100 kV/us minimum CMTI cleanly switch SiC MOSFETs at dV/dt that would falsely trigger optocoupler-based drivers. Placed on the cold side of an isolated DC-DC module, the driver passes safety-relevant 3 kVrms isolation while delivering PWM with low propagation delay. This combination supports higher switching frequency in 50-100 kHz range, reducing magnetic size in the inverter power stage. Pair with TI's solar-optimised controllers for a fully validated reference design.
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On-Board EV Chargers and Traction Inverters
The UCC5390ECD suits the gate-drive stage of on-board EV chargers (OBC) and high-voltage DC-DC converters where SiC MOSFETs switch at 50-200 kHz across 400-800 V bus rails. The TI datasheet confirms 10 A peak source/sink drives SiC at near-zero gate loss, while the 12 V UVLO prevents partial turn-on during supply ramp-up - critical because partial turn-on of a SiC MOSFET at high bus voltage creates destructive short-circuit currents. Placed at each high-side switch of the OBC totem-pole bridge, the driver delivers 3 kVrms basic isolation across the high-voltage/reinforced-isolation boundary as part of a functional-isolation subsystem. Engineers typically pair it with an isolated DC-DC bias supply and a TI C2000 controller for automotive-grade reference designs.
추천
Telecom Rectifiers and UPS Systems
In telecom rectifier and UPS power modules, the UCC5390ECD drives the primary-side MOSFETs of a high-frequency isolated DC-DC stage converting 48 V or 380 V bus to lower distribution rails. According to TI, the 10 A drive output handles the high peak currents required by large MOSFETs or SiC switches used in 3-6 kW rectifier modules running at 100 kHz+ switching frequency. The 12 V UVLO protects MOSFET/IGBT power stages during start-up transients common in hot-swap rectifier configurations. Its 3 kVrms isolation barrier supports safety-rated isolation between the user-accessible 48 V bus and the AC mains in telecom front-end converters, reducing both EMI susceptibility and ground-loop noise.
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Induction Heating Resonant Converters
Induction-heating resonant converters use IGBTs and SiC MOSFETs switching at 20-100 kHz with extremely high dV/dt and operating temperatures. The UCC5390ECD's 100 kV/us CMTI and 10 A peak drive suit the demanding gate-drive requirement of these topologies. According to TI's datasheet, the capacitive-isolation barrier handles the high common-mode noise of the resonant tank ground bouncing while maintaining PWM timing integrity. Placed in the gate-drive path of each half-bridge leg, it switches a 1200 V IGBT with sub-100 ns propagation delay, maximising the duty-cycle accuracy needed to control resonant current. The wide -40C to +125C operating range covers the harsh thermal environment inside an induction-heating inverter cabinet.
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SiC and GaN-Based High-Frequency DC-DC Converters
For SiC and GaN-based high-frequency DC-DC converters up to several kW, the UCC5390ECD's 10 A peak drive current switches the very fast edge rates of wide-bandgap devices. According to TI, the family supports MOSFETs (any voltage), IGBTs, SiC MOSFETs, and GaN FETs, with the UCC5350SBD variant adding split outputs for rise/fall shaping on GaN. Placed between a digital controller (FPGA, MCU, or DSP) and the gate of the high-side switch, the driver delivers 12 V UVLO-protected output with capacitive isolation. The high CMTI of >=100 kV/us preserves timing integrity at high dV/dt transitions, eliminating false-triggering risk that optocoupler drivers cannot reliably suppress above 50 kV/us.
추천
Industrial Welding and Plasma Power Supplies
Industrial welding inverters and plasma-cutters rely on IGBTs switching at a few to tens of kHz across 600 V buses, where gate-drive isolation protects the user from the high-voltage DC link. The UCC5390ECD provides TI's capacitive isolation and a 10 A peak drive, ideal for high-peak-current IGBT modules. Placed on the gate-drive PCB, the 3 kVrms barrier maintains operator safety while the 12 V UVLO prevents IGBT partial turn-on that destroys the module. According to TI datasheet, the SOIC-8 (D) package keeps the driver small enough to fit multiple drivers on the inverter board while delivering robust switching capability against the high industrial noise floor.
추천
추천 제품 요약
엔지니어링 참조 데이터: UCC5390ECD — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | UCC5390ECDR | UCC5390EC | UCC5350SBD | UCC5390E |
|---|---|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package | SOIC-8 (D) | SOIC-8 (D) - same | SOIC-8 (D) - same | SOIC-8 (D) - same | SOIC-8 (DWV wider-body) - same family, wider land |
| Isolation Voltage | 3 kVrms basic | 3 kVrms basic | 3 kVrms basic | 3 kVrms basic | 5 kVrms basic |
| Output Source/Sink Current | 10 A / 10 A | 10 A / 10 A | 10 A / 10 A | 10 A / 10 A | 10 A / 10 A |
| UVLO Threshold (VCC2) | 12 V | 12 V | 12 V | 8 V (GaN-optimised) | 12 V |
| Common-Mode Transient Immunity | >=100 kV/us | >=100 kV/us | >=100 kV/us | >=100 kV/us | >=100 kV/us |
| Output Configuration | Single output (OUT) | Single output (OUT) | Single output (OUT) | Split output (OUTH/OUTL) | Single output (OUT) |
| Approximate Price (1 pc) | $2.37 | ~$2.40 (T&R) | ~$2.50 (tray) | ~$3.00 | ~$3.20 (wider-body) |
| Optimised Device Type | MOSFET / IGBT / SiC | MOSFET / IGBT / SiC | MOSFET / IGBT / SiC | GaN (split output) | MOSFET / IGBT / SiC (higher isolation) |
주요 차별점
- Capacitive isolation eliminates LED aging (vs Optocoupler-based drivers (e.g. some HCPL-3xxx series))
- 10 A peak drive from a small SOIC-8 footprint (vs UCC21521 (4 A peak dual-channel driver))
- Split-output option for GaN rise/fall shaping (vs UCC5350SBD)
설계 노트
Keep the input-side (GND1) and output-side (GND2) ground planes physically separated on the PCB; only meet at the driver's isolation barrier. Place VDD1 and VDD2 bypass capacitors (1 uF ceramic plus 0.1 uF HF) as close as possible to their respective pins. Maintain published creepage and clearance distances for the SOIC-8 (D) package to preserve the 3 kVrms rating; for 5 kVrms move to the DWV wider-body package.
Route the gate-drive output (OUT) trace on the output-side reference plane, away from input-side logic signals, to minimise capacitive coupling across the isolation barrier. Use a minimum of 10 mil trace to deliver the 10 A peak without excessive voltage drop. According to TI datasheet, drive resistor values in the 2-10 ohm range balance switching loss against EMI; verify with oscilloscope on the actual board.
At sustained high PWM frequency the SOIC-8 (D) package dissipates drive-stage power plus quiescent power, so derate the part for elevated ambient temperatures above 85C. Estimated: at 10 A peak drive and 200 kHz switching, total package dissipation can reach 0.4-0.6 W; with theta_JA of approximately 110 C/W for SOIC-8 (D), junction temperature rises 44-66C above ambient - acceptable within the -40C to +125C operating window but warrants copper-pour heat-spreading on the footprint.
Never operate the UCC5390ECD without a VDD2 supply within the UVLO-qualified range; partial turn-on of an IGBT or SiC MOSFET on a 600-1200 V bus from below-UVLO operation will create destructive short-circuit currents. Verify VDD2 ramp with an oscilloscope during first-power-up. According to TI, the 12 V UVLO option assumes a 15 V nominal gate-drive supply; for 12 V gate-drive rails use the UCC5350SBD (8 V UVLO option).
Avoid tying IN+ and IN- to the same logic signal at start-up; on some competitive parts the input stage can latch or have undefined output. According to the TI UCC5390 datasheet, IN- must be tied high to enable non-inverting PWM, or driven as a complementary input for true differential PWM. Confirm with timing diagram in the datasheet's 'Electrical Characteristics' section before PCB bring-up.
규정 준수 정보
RoHS compliant per TI product page. Not AEC-Q100 qualified - choose UCC21530QDWKRQ1 or UCC21550AQDWKRQ1 for automotive. VDE 0884 / UL 1577 ratings per datasheet.
