10M08DCF256I7G vs 10M04DCF256A7G Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci 10M08DCF256I7G disebabkan oleh Intel dan 10M04DCF256A7G disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | 10M08DCF256I7G | 10M04DCF256A7G |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Series | MAX 10 | MAX 10 |
| Family | MAX 10 FPGA | — |
| Logic Elements (LE) | 8,000 | 4,000 |
| Embedded Memory (bits) | 387,072 | — |
| User I/O Count | 178 | — |
| DSP Blocks (18x18) | [DATA_NEEDED: 18x18 multiplier count] | — |
| Kemasan | 256-FBGA (FineLine BGA) | 256-LBGA (FBGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -40C to +100C (Industrial) | -40C to +125C (Industrial) |
| Supply Voltage - Core | [DATA_NEEDED: core voltage range] | — |
| Supply Voltage - I/O Banks | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (bank-dependent) | — |
| Configuration Memory | On-chip dual-configuration flash (non-volatile) | Internal dual-configuration flash (instant-on) |
| On-die ADC | 12-bit, up to 1 MSa/s | — |
| External Memory Interface | LPDDR2 / DDR3 / DDR3L | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Process Technology | 55 nm NOR-flash-backed CMOS | 55 nm |
| Maximum User I/O | — | 178 |
| Embedded Memory (M9K) | — | 193,536 bits |
| Total RAM | — | 1.5 Mbit |
| User Flash Memory (UFM) | — | 16 Kbit |
| Core Voltage | — | 1.2 V |
| Integrated ADC | — | 12-bit, 1 MSPS |
| PLLs | — | [DATA_NEEDED: PLL count] |