10M08DCF256I7G vs 10M04DCF256A7G Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 10M08DCF256I7G sa pamamagitan ng Intel at 10M04DCF256A7G sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | 10M08DCF256I7G | 10M04DCF256A7G |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Series | MAX 10 | MAX 10 |
| Family | MAX 10 FPGA | — |
| Logic Elements (LE) | 8,000 | 4,000 |
| Embedded Memory (bits) | 387,072 | — |
| User I/O Count | 178 | — |
| DSP Blocks (18x18) | [DATA_NEEDED: 18x18 multiplier count] | — |
| Packhaging | 256-FBGA (FineLine BGA) | 256-LBGA (FBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -40C to +100C (Industrial) | -40C to +125C (Industrial) |
| Supply Voltage - Core | [DATA_NEEDED: core voltage range] | — |
| Supply Voltage - I/O Banks | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (bank-dependent) | — |
| Configuration Memory | On-chip dual-configuration flash (non-volatile) | Internal dual-configuration flash (instant-on) |
| On-die ADC | 12-bit, up to 1 MSa/s | — |
| External Memory Interface | LPDDR2 / DDR3 / DDR3L | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Process Technology | 55 nm NOR-flash-backed CMOS | 55 nm |
| Maximum User I/O | — | 178 |
| Embedded Memory (M9K) | — | 193,536 bits |
| Total RAM | — | 1.5 Mbit |
| User Flash Memory (UFM) | — | 16 Kbit |
| Core Voltage | — | 1.2 V |
| Integrated ADC | — | 12-bit, 1 MSPS |
| PLLs | — | [DATA_NEEDED: PLL count] |