1N5711SB vs 1N6263 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1N5711SB disebabkan oleh STMicroelectronics dan 1N6263 disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1N5711SB 1N6263
Merek STMicroelectronics STMicroelectronics
Kategori Diodes Diodes
Status Lingkungan Hidup Aktif Aktif
Diode Type Small Signal Schottky Barrier Diode Small Signal Schottky (metal-to-silicon junction)
Peak Reverse Voltage (VRRM) 70 V —
Average Forward Current (IF(AV)) 15 mA —
Power Dissipation 430 mW 400 mW
Forward Voltage (VF) [DATA_NEEDED: forward voltage at rated current] [DATA_NEEDED: forward voltage]
Reverse Current (IR) [DATA_NEEDED: reverse current at rated VR] —
Junction Capacitance (Cj) [DATA_NEEDED: junction capacitance] —
Reverse Recovery Time Ultrafast (Schottky, no stored charge) Ultrafast (no stored charge, barrier-limited)
Configuration Single —
Kemasan DO-35 (SOD-27) hermetic glass axial DO-35 (axial, through-hole glass)
Jenis Pemasangan Through Hole Through Hole
Junction Material Metal-to-silicon junction —
Primary Applications UHF/VHF detection, mixing, switching, pulse shaping —
Suhu Operasi [DATA_NEEDED: operating temperature range] —
Status RoHS [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: RoHS status]
Matched Batches Available on request (ST) —
Repetitive Peak Reverse Voltage (VRRM) — 60 V
Average Forward Current (IF) — 15 mA
Reverse Leakage Current (IR) — [DATA_NEEDED: reverse leakage current]
Junction Capacitance — [DATA_NEEDED: junction capacitance]
Surge Current Rating (IFSM) — [DATA_NEEDED: surge current]
Technology — Guard-ring Schottky barrier
Application Focus — UHF/VHF detection, pulse applications, broad dynamic range
Number of Elements — 1
Gambaran Suhu Operasi — [DATA_NEEDED: operating temperature range]

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