1N5711SB vs 1N6263 Karşılaştırma

Ayrıntılı yan yana karşılaştırma 1N5711SB tarafından STMicroelectronics ve 1N6263 tarafından STMicroelectronicsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre 1N5711SB 1N6263
Marka STMicroelectronics STMicroelectronics
Kategori Diodes Diodes
Yaşam Döngüsü Durumu Aktif Aktif
Diode Type Small Signal Schottky Barrier Diode Small Signal Schottky (metal-to-silicon junction)
Peak Reverse Voltage (VRRM) 70 V —
Average Forward Current (IF(AV)) 15 mA —
Power Dissipation 430 mW 400 mW
Forward Voltage (VF) [DATA_NEEDED: forward voltage at rated current] [DATA_NEEDED: forward voltage]
Reverse Current (IR) [DATA_NEEDED: reverse current at rated VR] —
Junction Capacitance (Cj) [DATA_NEEDED: junction capacitance] —
Reverse Recovery Time Ultrafast (Schottky, no stored charge) Ultrafast (no stored charge, barrier-limited)
Configuration Single —
Paket DO-35 (SOD-27) hermetic glass axial DO-35 (axial, through-hole glass)
Montaj Türü Through Hole Through Hole
Junction Material Metal-to-silicon junction —
Primary Applications UHF/VHF detection, mixing, switching, pulse shaping —
İşletim Sıcaklığı [DATA_NEEDED: operating temperature range] —
RoHS Durumu [DATA_NEEDED: RoHS compliance status] [DATA_NEEDED: RoHS status]
Matched Batches Available on request (ST) —
Repetitive Peak Reverse Voltage (VRRM) — 60 V
Average Forward Current (IF) — 15 mA
Reverse Leakage Current (IR) — [DATA_NEEDED: reverse leakage current]
Junction Capacitance — [DATA_NEEDED: junction capacitance]
Surge Current Rating (IFSM) — [DATA_NEEDED: surge current]
Technology — Guard-ring Schottky barrier
Application Focus — UHF/VHF detection, pulse applications, broad dynamic range
Number of Elements — 1
İşletim Sıcaklığı Aralığı — [DATA_NEEDED: operating temperature range]

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