BSC010NE2LSIATMA1 vs BSC050NE2LSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC010NE2LSIATMA1 disebabkan oleh Infineon dan BSC050NE2LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC010NE2LSIATMA1 | BSC050NE2LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series / Family | OptiMOS 25V | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TA | 38 A | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 96 W | — |
| Kemasan | PG-TDSON-8-7 (TDSON-8 EP) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | OptiMOS (Trench) | OptiMOS 25V (trench) |
| Gambaran Suhu Operasi | -55C to +150C (TJ) | -55C to +150C |
| Kiraan Pin | 8 | — |
| Status RoHS | Compliant | Compliant |
| Gate Drive | Logic-level compatible | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | — |
| Rds(on) at 10V | [DATA_NEEDED: Rds(on) at VGS=10V] | — |
| Rds(on) at 4.5V | [DATA_NEEDED: Rds(on) at VGS=4.5V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 25 V |
| Continuous Drain Current (I_D) at Tc=25C | — | 58 A |
| Continuous Drain Current (I_D) at Ta=25C | — | 39 A |
| R_DS(on) max at V_GS=10V | — | 5 mOhm |
| R_DS(on) typical at V_GS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 28 W |