BSC010NE2LSIATMA1 vs BSC050NE2LSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC010NE2LSIATMA1 sa pamamagitan ng Infineon at BSC050NE2LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSC010NE2LSIATMA1 | BSC050NE2LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series / Family | OptiMOS 25V | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TA | 38 A | — |
| Continuous Drain Current (ID) at TC | 100 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 96 W | — |
| Packhaging | PG-TDSON-8-7 (TDSON-8 EP) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | OptiMOS (Trench) | OptiMOS 25V (trench) |
| Hanay ng Temperature na Operasyon | -55C to +150C (TJ) | -55C to +150C |
| Bilang ng Pin | 8 | — |
| Tindminan RoHS | Compliant | Compliant |
| Gate Drive | Logic-level compatible | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Rds(on) at 10V | [DATA_NEEDED: Rds(on) at VGS=10V] | — |
| Rds(on) at 4.5V | [DATA_NEEDED: Rds(on) at VGS=4.5V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 25 V |
| Continuous Drain Current (I_D) at Tc=25C | — | 58 A |
| Continuous Drain Current (I_D) at Ta=25C | — | 39 A |
| R_DS(on) max at V_GS=10V | — | 5 mOhm |
| R_DS(on) typical at V_GS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 28 W |