BSC014N04LSATMA1 vs BSC019N04NSGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC014N04LSATMA1 disebabkan oleh Infineon dan BSC019N04NSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC014N04LSATMA1 | BSC019N04NSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Ta | 32 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| RDS(on) max at VGS=10 V | 1.4 mOhm | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 96 W | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gambaran Suhu Operasi | -55C to +175C | -55C to +150C |
| Kemasan | SuperSO8 (TDSON-8 FL) 5x6 mm | PG-TDSON-8-1 (TDSON-8 FL) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | Trench (OptiMOS 5, thin-wafer) | OptiMOS (trench) |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (unlimited) | — |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TA=25C | — | 30 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=10V | — | 2.5 mΩ |
| RDS(on) typ at VGS=10V | — | 1.9 mΩ |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Power Dissipation (PD) at TC=25C | — | 125 W |