BSC014N06NSATMA1 vs BSC059N04LS6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC014N06NSATMA1 disebabkan oleh Infineon dan BSC059N04LS6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC014N06NSATMA1 | BSC059N04LS6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Gate-Source Voltage (VGS) Max | +/- 20 V | — |
| Continuous Drain Current (ID) at Ta | 30 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) Typ @ VGS=10V | 1.4 mOhm | — |
| On-Resistance RDS(on) Max @ VGS=10V | 1.45 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 156 W | — |
| Gambaran Suhu Operasi | -55C to +150C | -55C to +150C |
| Kemasan | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 | — |
| Status RoHS | Compliant | Compliant |
| Technology | OptiMOS 5 (shielded-gate trench) | OptiMOS 6 (N-channel MOSFET) |
| Continuous Drain Current (ID) at TA=25C | — | 17 A |
| Continuous Drain Current (ID) at TC=25C | — | 49 A |
| Pulsed Drain Current (ID,pulse) at TC=25C | — | 59 A |
| On-Resistance RDS(on) max | — | 5.9 mOhm at VGS=10 V |
| Total Power Dissipation at TA=25C | — | 3 W |
| Total Power Dissipation at TC=25C | — | 38 W |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Diode Continuous Forward Current (IS) | — | 38 A at TC=25C |
| Diode Pulse Current (IS,pulse) | — | 236 A at TC=25C |
| Lead-Free | — | Yes |