BSC014N06NSATMA1 vs IAUZ30N06S5L140ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC014N06NSATMA1 disebabkan oleh Infineon dan IAUZ30N06S5L140ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC014N06NSATMA1 | IAUZ30N06S5L140ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Gate-Source Voltage (VGS) Max | +/- 20 V | — |
| Continuous Drain Current (ID) at Ta | 30 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) Typ @ VGS=10V | 1.4 mOhm | — |
| On-Resistance RDS(on) Max @ VGS=10V | 1.45 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 156 W | — |
| Gambaran Suhu Operasi | -55C to +150C | — |
| Kemasan | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TSDSON-8-32 (S3O8, 3x3 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 | — |
| Status RoHS | Compliant | — |
| Technology | OptiMOS 5 (shielded-gate trench) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 30 A (Tj) |
| Power Dissipation (PD, Tc) | — | 33 W |
| RDS(on) Max @ VGS=10 V | — | 14 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 2.2 V (typ) |
| Total Gate Charge (Qg) | — | 12.2 nC @ VGS=10 V |
| Output Capacitance (Coss) | — | 888 pF @ VDS=30 V |
| Suhu Hubungan Operasi | — | -55°C to +175°C |
| Technology Family | — | OptiMOS 5 |
| Automotive Grade | — | AEC-Q101 qualified |
| Gate-Source Voltage Max | — | ±20 V |
| Lead-Free / RoHS | — | Yes (RoHS compliant) |