BSC016N06NSTATMA1 vs IPB35N10S3L26ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC016N06NSTATMA1 disebabkan oleh Infineon dan IPB35N10S3L26ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC016N06NSTATMA1 IPB35N10S3L26ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC016N06NSTATMA1 —
FET Type N-Channel —
Technology OptiMOS 5 —
Drain-to-Source Voltage (VDS) 60 V —
Gate-to-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Continuous Drain Current (ID, Ta=25C) 31 A —
On-Resistance RDS(on) max (VGS=10V) 1.6 mOhm —
Power Dissipation (Tc) 167 W —
Power Dissipation (Ta) 3 W —
Kemasan PG-TDSON-8 FL (SuperSO8 5x6 mm) —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +150 C —
Aras MSL [DATA_NEEDED: MSL level] —
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Lead-Free Yes —
Series OptiMOS —
Product Family — OptiMOS-T
Channel Type — N-Channel
Maximum Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC — 35 A
Power Dissipation (PD) at TC — 71 W
Package Type — PG-TO263-3 (D2PAK-2)
Kiraan Pin — 3 (Gate, Drain, Source)
Channel Mode — Enhancement
RDS(on) (typical per Infineon product page) — 26.3 mΩ
Typical Gate Charge Qg @ Vgs — 80 nC
Maximum Drain-Source Resistance Rds — 1.7 mΩ (per RS Components listing)
Minimum Operating Temperature — -55 C
Maximum Power Dissipation Pd — 81 W (per RS Components listing)
AEC-Q101 Qualification — [DATA_NEEDED: AEC-Q101 qualification status]

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