BSC019N08NS5ATMA1 vs IAUZ18N10S5L420ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC019N08NS5ATMA1 disebabkan oleh Infineon dan IAUZ18N10S5L420ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUZ18N10S5L420ATMA1 IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon

IAUZ18N10S5L420ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC019N08NS5ATMA1 IAUZ18N10S5L420ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 5 (N-channel trench) OptiMOS 5 trench
Polarity N-Channel —
Drain-Source Voltage (VDS) max 80 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at TA=25C 28 A —
Continuous Drain Current (ID) at TC=25C 237 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) max at VGS=10V 1.9 mOhm 42 mΩ
Gate Threshold Voltage VGS(th) typ 3.0 V —
Total Gate Charge Qg [DATA_NEEDED: total gate charge Qg] —
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 214 W —
Gambaran Suhu Operasi -55 C to +150 C —
Kemasan PG-TSON-8-3 (SuperSO8 5x6 mm) PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 1
Status RoHS Compliant Compliant
Avalanche Rated Yes —
Series — OptiMOS 5 100V
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25°C — 18 A
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — 1.7 V to 2.7 V
Total Gate Charge (Qg) typ. — 8.5 nC
Power Dissipation (PD) at TC=25°C — 30 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Automotive Qualification — AEC-Q101 qualified
Configuration — Single with built-in diode

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