BSC019N08NS5ATMA1 vs IAUZ18N10S5L420ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC019N08NS5ATMA1 sa pamamagitan ng Infineon at IAUZ18N10S5L420ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC019N08NS5ATMA1 - 80V 237A 1.9mOhm OptiMOS 5 MOSFET | Infineon
BSC019N08NS5ATMA1 ✓ NakahandaInfineon
IAUZ18N10S5L420ATMA1 - 100V 18A 42mΩ N-Ch OptiMOS 5 | Infineon
IAUZ18N10S5L420ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC019N08NS5ATMA1 | IAUZ18N10S5L420ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 (N-channel trench) | OptiMOS 5 trench |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at TA=25C | 28 A | — |
| Continuous Drain Current (ID) at TC=25C | 237 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) max at VGS=10V | 1.9 mOhm | 42 mΩ |
| Gate Threshold Voltage VGS(th) typ | 3.0 V | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation (TA=25C) | 3 W | — |
| Power Dissipation (TC=25C) | 214 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C | — |
| Packhaging | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TSDSON-8-32 (S3O8) 3.3x3.3 mm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Series | — | OptiMOS 5 100V |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25°C | — | 18 A |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.7 V to 2.7 V |
| Total Gate Charge (Qg) typ. | — | 8.5 nC |
| Power Dissipation (PD) at TC=25°C | — | 30 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 qualified |
| Configuration | — | Single with built-in diode |