BSC030N03LSGATMA1 vs BSC019N04NSGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC030N03LSGATMA1 disebabkan oleh Infineon dan BSC019N04NSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC030N03LSGATMA1 BSC019N04NSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (Vdss) 30 V —
Continuous Drain Current (Id) @ Tc=25C 100 A —
Continuous Drain Current (Id) @ Ta=25C 23 A —
RDS(on) Max @ VGS=10V 3 mOhm —
RDS(on) Max @ VGS=4.5V [DATA_NEEDED: typical RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (Vgs th) Typ 2.2 V —
Gate Charge (Qg) Typ @ VGS=15V 55 nC —
Output Charge (Qoss) 66 pF —
Input Capacitance (Ciss) Typ 4.3 nF —
Power Dissipation (Pd) @ Ta=25C 2.5 W —
Power Dissipation (Pd) @ Tc=25C 69 W —
Suhu Hubungan Operasi -55C to +150C —
Kemasan PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8-1 (TDSON-8 FL)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Aras MSL 1 —
Avalanche Rated Yes (100% tested) —
Jenis Transistor — N-Channel MOSFET
Technology — OptiMOS (trench)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) at TA=25C — 30 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) max at VGS=10V — 2.5 mΩ
RDS(on) typ at VGS=10V — 1.9 mΩ
Gate-Source Threshold (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at TA=25C — 2.5 W
Power Dissipation (PD) at TC=25C — 125 W
Gambaran Suhu Operasi — -55C to +150C

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