BSC030N03LSGATMA1 vs BSC019N04NSGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC030N03LSGATMA1 sa pamamagitan ng Infineon at BSC019N04NSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon
BSC030N03LSGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC030N03LSGATMA1 | BSC019N04NSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 100 A | — |
| Continuous Drain Current (Id) @ Ta=25C | 23 A | — |
| RDS(on) Max @ VGS=10V | 3 mOhm | — |
| RDS(on) Max @ VGS=4.5V | [DATA_NEEDED: typical RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (Vgs th) Typ | 2.2 V | — |
| Gate Charge (Qg) Typ @ VGS=15V | 55 nC | — |
| Output Charge (Qoss) | 66 pF | — |
| Input Capacitance (Ciss) Typ | 4.3 nF | — |
| Power Dissipation (Pd) @ Ta=25C | 2.5 W | — |
| Power Dissipation (Pd) @ Tc=25C | 69 W | — |
| Temperature ng Junction na Operasyon | -55C to +150C | — |
| Packhaging | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (TDSON-8 FL) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | — |
| Avalanche Rated | Yes (100% tested) | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS (trench) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TA=25C | — | 30 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=10V | — | 2.5 mΩ |
| RDS(on) typ at VGS=10V | — | 1.9 mΩ |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Power Dissipation (PD) at TC=25C | — | 125 W |
| Hanay ng Temperature na Operasyon | — | -55C to +150C |