BSC042NE7NS3GATMA1 vs BSC0902NSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC042NE7NS3GATMA1 disebabkan oleh Infineon dan BSC0902NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC042NE7NS3GATMA1 | BSC0902NSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC042NE7NS3GATMA1 | — |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 3 | — |
| Drain-Source Voltage (VDS) | 75 V | 30 V |
| Continuous Drain Current (ID) at Ta | 19 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| RDS(on) max at VGS=10V | 4.2 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | 1.7 V | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| Gambaran Suhu Operasi | -55C to +150C | -55C to +150C (Tj) |
| Kemasan | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (SuperSO8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 | — |
| Status RoHS | Compliant | — |
| Continuous Drain Current (ID, Ta) | — | 24 A |
| Pulsed Drain Current (IDM, Tc) | — | 100 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 48 W |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| RDS(on) @ VGS=10V max | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| RDS(on) @ VGS=4.5V max | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Total Gate Charge (Qg typ) | — | [DATA_NEEDED: Qg typical] |
| Qualification | — | JEDEC qualified for target applications |
| RoHS Compliance | — | Compliant (Pb-free lead plating) |
| Boson Bebas | — | Yes, per IEC 61249-2-21 |
| Avalanche Rated | — | Yes (100% avalanche tested) |