BSC054N04NSGATMA1 vs BSC018N04LSGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC054N04NSGATMA1 disebabkan oleh Infineon dan BSC018N04LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC018N04LSGATMA1 BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSC054N04NSGATMA1 BSC018N04LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC054N04NSGATMA1 —
Technology OptiMOS 3 (N-Channel Trench MOSFET) MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at Tc=25C 81 A —
Continuous Drain Current (ID) at Ta=25C 17 A —
On-Resistance RDS(on) max at VGS=10V 5.4 mOhm —
Gate-Source Voltage (VGS) max ±20 V —
Power Dissipation at Tc=25C 57 W —
Power Dissipation at Ta=25C 2.5 W —
Gambaran Suhu Operasi -55C to +150C -55°C to +150°C (TJ)
Kemasan PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant (Pb-free plating)
Gate Drive Voltage (recommended) 10 V —
Lead-Free Reflow Yes —
Series — OptiMOS 3
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) @ TC=25°C — 100 A
Continuous Drain Current (ID) @ TA=25°C — 30 A
Power Dissipation (PD) @ TC=25°C — 125 W
Power Dissipation (PD) @ TA=25°C — 2.5 W
RDS(on) Max @ VGS=10 V — 1.8 mΩ
Drive Voltage (Max RDS(on), Min RDS(on)) — 4.5 V, 10 V
Gate Threshold Voltage (VGS(th)) Typ — [DATA_NEEDED: VGS(th) typical]
Avalanche Tested — 100% (per datasheet)
JEDEC Qualification — Yes (qualified per JEDEC for target applications)

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