BSC054N04NSGATMA1 vs BSC059N04LSGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC054N04NSGATMA1 disebabkan oleh Infineon dan BSC059N04LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC054N04NSGATMA1 | BSC059N04LSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC054N04NSGATMA1 | — |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | OptiMOS 3 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tc=25C | 81 A | — |
| Continuous Drain Current (ID) at Ta=25C | 17 A | — |
| On-Resistance RDS(on) max at VGS=10V | 5.4 mOhm | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Power Dissipation at Tc=25C | 57 W | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Gambaran Suhu Operasi | -55C to +150C | -55 C to +150 C |
| Kemasan | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Gate Drive Voltage (recommended) | 10 V | — |
| Lead-Free Reflow | Yes | — |
| Continuous Drain Current (ID, Tc=25C) | — | 73 A |
| Continuous Drain Current (ID, Ta=25C) | — | 16 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 5.9 mOhm |
| Power Dissipation (Tc=25C) | — | 50 W |
| Power Dissipation (Ta=25C) | — | 2.5 W |
| Gate-Source Threshold Voltage VGS(th) | — | 1.2 V to 2.0 V (typ) |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg total, typical nC] |
| REACH Status | — | Compliant |
| Channel Type | — | N-Channel |