BSC0901NSATMA1 vs BSC052N08NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0901NSATMA1 disebabkan oleh Infineon dan BSC052N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC0901NSATMA1 BSC052N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 30V —
Technology N-Channel Trench MOSFET (OptiMOS) OptiMOS 5
Drain-to-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at Tc 100 A —
Continuous Drain Current (ID) at Ta 28 A —
On-State Resistance RDS(on) Max at VGS=10V 1.9 mOhm —
On-State Resistance RDS(on) Typ at VGS=10V [DATA_NEEDED: RDS(on) typical] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Gate Charge (Qg) Typ [DATA_NEEDED: Qg total] —
Avalanche Energy (EAS) 80 mJ —
Power Dissipation (PD) at Tc 69 W —
Power Dissipation (PD) at Ta 2.5 W —
Gambaran Suhu Operasi -55C to +150C —
Kemasan TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm PG-TDSON-8 (SuperSO8) 5x6 mm
Jenis Pemasangan Surface Mount Surface Mount
Tingkat sensitiviti Air Nama (MSL) 1 —
Built-in Body Diode Yes —
Status RoHS Compliant Compliant
Configuration Single N-Channel with Built-in Diode —
Part Number — BSC052N08NS5ATMA1
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc) — 95 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 5.2 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage VGS(th) typ — 2.5-3.0 V
Total Power Dissipation (Tc) — 83 W
Total Power Dissipation (Ta) — 2.5 W
Suhu Hubungan Operasi — -55C to +150C
Aras MSL — 1 (unlimited)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga