BSC0901NSIATMA1 vs BSC076N04NDATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0901NSIATMA1 disebabkan oleh Infineon dan BSC076N04NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSC0901NSIATMA1 BSC076N04NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 25V N-Channel Power MOSFET Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta=25C 28 A —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-State Resistance (RDS(on)) at VGS=10V 2.0 mOhm typical —
On-State Resistance (RDS(on)) at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate-Source Threshold Voltage (VGS(th)) 2.2 V max —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge nC] —
Power Dissipation (PD) at Ta=25C 2.5 W —
Power Dissipation (PD) at Tc 69 W —
Gambaran Suhu Operasi -55 C to +150 C —
Kemasan PG-TDSON-8-6 (5x6 mm with exposed pad) —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 8 —
Aras MSL 1 —
Status RoHS Compliant —
Boson Bebas Yes —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Suhu Hubungan Operasi — -55 C to +175 C
Kemasan / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

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