BSC0902NSATMA1 vs BSC0901NSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0902NSATMA1 disebabkan oleh Infineon dan BSC0901NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC0902NSATMA1 | BSC0901NSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID, Ta) | 24 A | — |
| Pulsed Drain Current (IDM, Tc) | 100 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 48 W | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| RDS(on) @ VGS=10V max | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| RDS(on) @ VGS=4.5V max | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Total Gate Charge (Qg typ) | [DATA_NEEDED: Qg typical] | — |
| Gambaran Suhu Operasi | -55C to +150C (Tj) | -55C to +150C |
| Kemasan | PG-TDSON-8-6 (SuperSO8) | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Qualification | JEDEC qualified for target applications | — |
| RoHS Compliance | Compliant (Pb-free lead plating) | — |
| Boson Bebas | Yes, per IEC 61249-2-21 | — |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 30V |
| Technology | — | N-Channel Trench MOSFET (OptiMOS) |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Tingkat sensitiviti Air Nama (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Status RoHS | — | Compliant |
| Configuration | — | Single N-Channel with Built-in Diode |