BSC0906NSATMA1 vs BSC0901NSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC0906NSATMA1 disebabkan oleh Infineon dan BSC0901NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC0906NSATMA1 | BSC0901NSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 18 A | 28 A |
| Continuous Drain Current (ID) at Tc | 63 A | 100 A |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| Kemasan | PG-TDSON-8-6 (SuperSO8, 5x6 mm) | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS | N-Channel Trench MOSFET (OptiMOS) |
| RDS(on) max (typical reference) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ VGS=10V] | — |
| Gambaran Suhu Operasi | -55C to +150C (junction, typical) | -55C to +150C |
| Kiraan Pin | 8 | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Tingkat sensitiviti Air Nama (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |