BSC094N06LS5ATMA1 vs BSC0901NSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC094N06LS5ATMA1 disebabkan oleh Infineon dan BSC0901NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC094N06LS5ATMA1 | BSC0901NSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC094N06LS5ATMA1 | — |
| Technology | OptiMOS™ 5 (logic-level) | N-Channel Trench MOSFET (OptiMOS) |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25°C | 47 A | — |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| RDS(on) max at VGS=10 V | 9.4 mΩ | — |
| RDS(on) max at VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at TC=25°C | 36 W | — |
| Suhu Hubungan Operasi | -55 °C to +150 °C | — |
| Kemasan | PG-TDSON-8-6 (SuperSO8 5x6) | TDSON-8-5 (PG-TDSON-8-5) / SuperSO8 5x6 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Aras MSL | [DATA_NEEDED: MSL level] | — |
| Part Family | — | OptiMOS 30V |
| Drain-to-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Continuous Drain Current (ID) at Ta | — | 28 A |
| On-State Resistance RDS(on) Max at VGS=10V | — | 1.9 mOhm |
| On-State Resistance RDS(on) Typ at VGS=10V | — | [DATA_NEEDED: RDS(on) typical] |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy (EAS) | — | 80 mJ |
| Power Dissipation (PD) at Tc | — | 69 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Gambaran Suhu Operasi | — | -55C to +150C |
| Tingkat sensitiviti Air Nama (MSL) | — | 1 |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single N-Channel with Built-in Diode |