BSC117N08NS5ATMA1 vs BSZ110N08NS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC117N08NS5ATMA1 disebabkan oleh Infineon dan BSZ110N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSC117N08NS5ATMA1 | BSZ110N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC117N08NS5ATMA1 | — |
| Technology | OptiMOS 5 | OptiMOS 5 N-Channel Power MOSFET |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) max | 80 V | — |
| Continuous Drain Current (ID) max | 49 A (Tc) | — |
| On-State Resistance (RDS(on)) max | 11.7 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 50 W | — |
| Kemasan | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 8 | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Gambaran Suhu Operasi | -55 C to +150 C (typical MOSFET junction) | [DATA_NEEDED: operating temperature range] |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Aras MSL | 1 | [DATA_NEEDED: MSL level] |
| Part Family | — | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Tc | — | 40 A |
| On-Resistance RDS(on) max | — | 11 mΩ |
| Power Dissipation (PD) at Tc | — | 50 W |
| Polarity | — | N-Channel |
| Configuration | — | Single MOSFET |
| Gate Drive Voltage (VGS) | — | [DATA_NEEDED: VGS rating] |