BSC120N03LSGATMA1 vs BSC050N03LSGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC120N03LSGATMA1 disebabkan oleh Infineon dan BSC050N03LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
BSC120N03LSGATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | BSC120N03LSGATMA1 | BSC050N03LSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 12 A | — |
| Continuous Drain Current (ID) at Tc=25C | 39 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-State Resistance RDS(on) at VGS=10V | 12 mOhm (typical) | — |
| On-State Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 28 W | — |
| Gambaran Suhu Operasi | -55C to +150C (TJ) | -55 C to +150 C |
| Kemasan | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (per JEDEC J-STD-020) | 1 |
| Status RoHS | Compliant | Compliant |
| Part Number | — | BSC050N03LSGATMA1 |
| Technology | — | OptiMOS 3 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 80 A |
| Continuous Drain Current (ID) at Ta | — | 18 A |
| On-State Resistance (RDS(on)) Max at VGS=10V | — | 5 mOhm |
| Power Dissipation (PD) at Tc | — | 50 W |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Channel Type | — | N-Channel |