BSC123N08NS3GATMA1 vs BSC100N10NSFGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC123N08NS3GATMA1 disebabkan oleh Infineon dan BSC100N10NSFGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
BSC100N10NSFGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC123N08NS3GATMA1 | BSC100N10NSFGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 | — |
| Channel Type | N-Channel | — |
| Configuration | Single with built-in body diode | — |
| Maximum Drain-Source Voltage (VDS) | 80 V | — |
| Maximum Continuous Drain Current (ID, Tc) | 55 A | — |
| Maximum Continuous Drain Current (ID, Ta) | 11 A | — |
| Maximum Pulsed Drain Current | [DATA_NEEDED: pulsed drain current] | — |
| Maximum RDS(on) @ VGS=10 V | 12.3 mOhm | — |
| Maximum Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (Tc) | 66 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Suhu Hubungan Operasi | -55C to +150C | — |
| Kemasan | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant with exemption | Compliant |
| Automotive Qualified | Yes (AEC-Q101) | — |
| Series | — | OptiMOS |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID), Ta | — | 11.4 A |
| Continuous Drain Current (ID), Tc | — | 90 A |
| Power Dissipation (PD), Tc | — | 156 W |
| Drain-Source On-Resistance (RDS(on)) max | — | 10 mΩ |
| Gambaran Suhu Operasi | — | -55C to +150C (junction) |
| Gate Drive Voltage (recommended) | — | 10 V (for rated RDS(on)) |