BSS138NH6327XTSA2 vs BSS214NH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS138NH6327XTSA2 disebabkan oleh Infineon dan BSS214NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS138NH6327XTSA2 BSS214NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Operating Mode Enhancement —
V(BR)DSS (Drain-Source Breakdown Voltage) 60 V —
R_DS(on) max @ V_GS=10V 3.5 ohm —
Continuous Drain Current (Ta) 230 mA —
Power Dissipation (Ta) 360 mW —
Gate Threshold V_GS(th) [DATA_NEEDED: typical V_GS(th) value] —
Kemasan PG-SOT-23 (3-pin) SOT-23 (PG-SOT23), 3 pins
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj max and operating range] -55C to +150C (junction)
Gate-Source Voltage V_GS max ±20 V —
dv/dt Rated Yes —
Boson Bebas Yes (per IEC 61249-2-21) —
RoHS Compliance Compliant —
AEC-Q101 Qualification Qualified —
Lead Plating Pb-free —
Marking Code [DATA_NEEDED: top-side marking code] —
Packaging Tape and Reel —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 20 V
Continuous Drain Current (ID) — 1.5 A (Ta)
Power Dissipation (PD) — 500 mW (Ta)
Drain-Source On-Resistance (RDS(on) max) — 250 mOhm at VGS = 4.5 V
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
Gate-Source Voltage (VGS max) — ±12 V (recommended)
Technology — OptiMOS 2 (planar N-channel)
Qualification — AEC-Q101 (Automotive)
Lead Finish — Pb-free lead plating (matte tin)
Status RoHS — Compliant
Aras MSL — 1 (per JEDEC J-STD-020)
ESD Protection — Yes (gate ESD diode)

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