BSS205NH6327XTSA1 vs BSP316PH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS205NH6327XTSA1 disebabkan oleh Infineon dan BSP316PH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS205NH6327XTSA1 BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS205NH6327XTSA1 BSP316PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSS205NH6327XTSA1 —
Jenis Transistor N-Channel MOSFET —
Kemasan PG-SOT23 (SC-59, TO-236-3), 3-pin PG-SOT223-4 (TO-261-4)
Jenis Pemasangan Surface Mount Surface Mount
Drain-Source Voltage V<sub>DS</sub> 20 V —
Continuous Drain Current I<sub>D</sub> (Ta) 2.5 A —
Power Dissipation P<sub>D</sub> (Ta) 500 mW —
R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) 85 mΩ —
Gate Threshold V<sub>GS(th)</sub> [DATA_NEEDED: Vgs(th) typical value] —
Gambaran Suhu Operasi -55 °C to +150 °C (junction) -55 C to +150 C (junction)
Gate Drive Voltage Logic-level compatible —
Qualification AEC-Q101 —
Lead Plating Pb-free —
RoHS Compliance Compliant —
MSL (Moisture Sensitivity Level) MSL1 (per JEDEC J-STD-020) —
Packaging Tape & Reel (H6327) Tape & Reel (H6327 suffix)
FET Type — P-Channel
Drain-to-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at TA=25C — -680 mA
Total Power Dissipation (Ptot) at TA=25C — 1.8 W
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Bilangan Pin — 3 + thermal tab
Channel Mode — Enhancement
Technology — SIPMOS (P-channel MOSFET)
Status RoHS — Compliant
Aras MSL — 1

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