BSS83PH6327XTSA1 vs BSS84PH6327XTSA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS83PH6327XTSA1 disebabkan oleh Infineon dan BSS84PH6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSS83PH6327XTSA1 | BSS84PH6327XTSA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal-Oxide Semiconductor) | — |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TA=25C | 330 mA | — |
| Pulsed Drain Current (IDM) | 1.3 A | — |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 2.0 ohm (max) | — |
| Gate-Source Threshold Voltage (VGS(th)) | -1 V to -2.5 V (typ) | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Power Dissipation (PD) at TA=25C | 360 mW | — |
| Suhu Hubungan Operasi | -55 C to +150 C | — |
| Kemasan | PG-SOT23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Qualification | Automotive grade per Infineon | AEC-Q101 (Automotive) |
| Process Technology | SIPMOS / OptiMOS | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSS84PH6327XTSA2 |
| Drain-to-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) | — | -170 mA (Ta) |
| Power Dissipation (PD) | — | 360 mW (Ta) |
| On-State Resistance (RDS(on)) max | — | 8 ohm at VGS = -10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| Gate-to-Source Voltage (VGS) | — | +/-20 V |
| Suhu Operasi | — | -55C to +150C |
| Technology Family | — | SIPMOS OptiMOS |
| Polarity | — | P-Channel Enhancement Mode |
| Lead-Free | — | Yes |