BSZ031NE2LS5ATMA1 vs BSZ0501NSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ031NE2LS5ATMA1 disebabkan oleh Infineon dan BSZ0501NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSZ031NE2LS5ATMA1 BSZ0501NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ031NE2LS5ATMA1 BSZ0501NSIATMA1
Technology / Platform OptiMOS 5 25V/30V N-channel trench MOSFET —
Drain-Source Voltage (VDS) max 25 V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Continuous Drain Current (ID) at Ta=25C 19 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
RDS(on) max @ VGS=10 V 3.1 mOhm —
RDS(on) typical @ VGS=4.5 V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Power Dissipation at Ta=25C 2.1 W —
Power Dissipation at Tc=25C 30 W —
Suhu Hubungan Operasi -55 C to +150 C —
Kemasan PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) PG-TSDSON-8-FL (3.3 x 3.3 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL] [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Lead-Free Yes —
Boson Bebas Yes —
Product Family — OptiMOS 5 (25V/30V)
FET Type — N-Channel
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Id) at TA=25C — 25 A
Continuous Drain Current (Id) at TC=25C — 40 A
Power Dissipation (Pd) at TA=25C — 2.1 W
Power Dissipation (Pd) at TC=25C — 50 W
Operating Mode — Enhancement Mode
Configuration — Single with built-in diode
Number of Terminals — 8
JESD-609 Code — e3 (matte tin)
Rds(on) at Vgs=10V (typ) — [DATA_NEEDED: Rds(on) value]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Gambaran Suhu Operasi — [DATA_NEEDED: Tj max]

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