BSZ060NE2LSATMA1 vs IAUZ30N06S5L140ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ060NE2LSATMA1 disebabkan oleh Infineon dan IAUZ30N06S5L140ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUZ30N06S5L140ATMA1 IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon

IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon

IAUZ30N06S5L140ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSZ060NE2LSATMA1 IAUZ30N06S5L140ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSZ060NE2LSATMA1 —
Technology OptiMOS™ (N-Channel Trench MOSFET) —
Drain-Source Voltage (VDS) 25 V 60 V
Continuous Drain Current (ID) @ Ta=25C 12 A —
Continuous Drain Current (ID) @ Tc=25C 44 A —
Pulsed Drain Current (IDM) 44 A —
On-Resistance RDS(on) max @ VGS=10V 6 mOhm —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) @ VGS=4.5V] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical] —
Power Dissipation (Ta) 2.1 W —
Power Dissipation (Tc) 26 W —
Gambaran Suhu Operasi -55C to +150C —
Kemasan PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) PG-TSDSON-8-32 (S3O8, 3x3 mm)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant —
Aras MSL 1 —
Shipping Packaging Tape & Reel —
FET Type — N-Channel
Continuous Drain Current (ID, Tc) — 30 A (Tj)
Power Dissipation (PD, Tc) — 33 W
RDS(on) Max @ VGS=10 V — 14 mΩ
Gate Threshold Voltage (VGS(th)) — 2.2 V (typ)
Total Gate Charge (Qg) — 12.2 nC @ VGS=10 V
Output Capacitance (Coss) — 888 pF @ VDS=30 V
Suhu Hubungan Operasi — -55°C to +175°C
Technology Family — OptiMOS 5
Automotive Grade — AEC-Q101 qualified
Gate-Source Voltage Max — ±20 V
Lead-Free / RoHS — Yes (RoHS compliant)

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