BSZ060NE2LSATMA1 vs IAUZ30N06S5L140ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ060NE2LSATMA1 sa pamamagitan ng Infineon at IAUZ30N06S5L140ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ060NE2LSATMA1 - 25V 44A OptiMOS N-Channel MOSFET | Infineon
BSZ060NE2LSATMA1 ✓ NakahandaInfineon
IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon
IAUZ30N06S5L140ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSZ060NE2LSATMA1 | IAUZ30N06S5L140ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ060NE2LSATMA1 | — |
| Technology | OptiMOS™ (N-Channel Trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 25 V | 60 V |
| Continuous Drain Current (ID) @ Ta=25C | 12 A | — |
| Continuous Drain Current (ID) @ Tc=25C | 44 A | — |
| Pulsed Drain Current (IDM) | 44 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 6 mOhm | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) @ VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation (Ta) | 2.1 W | — |
| Power Dissipation (Tc) | 26 W | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | — |
| Packhaging | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8-32 (S3O8, 3x3 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | — |
| Level ng MSL | 1 | — |
| Shipping Packaging | Tape & Reel | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 30 A (Tj) |
| Power Dissipation (PD, Tc) | — | 33 W |
| RDS(on) Max @ VGS=10 V | — | 14 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 2.2 V (typ) |
| Total Gate Charge (Qg) | — | 12.2 nC @ VGS=10 V |
| Output Capacitance (Coss) | — | 888 pF @ VDS=30 V |
| Temperature ng Junction na Operasyon | — | -55°C to +175°C |
| Technology Family | — | OptiMOS 5 |
| Automotive Grade | — | AEC-Q101 qualified |
| Gate-Source Voltage Max | — | ±20 V |
| Lead-Free / RoHS | — | Yes (RoHS compliant) |