CY14V104LA-BA25XIT vs CY14V104LA Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci CY14V104LA-BA25XIT disebabkan oleh Infineon dan CY14V104LA disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
CY14V104LA-BA25XIT CY14V104LA-BA25XIT - 4Mb nvSRAM 25ns 48-FBGA | Infineon

CY14V104LA-BA25XIT - 4Mb nvSRAM 25ns 48-FBGA | Infineon

CY14V104LA-BA25XIT ✓ Aktif

Pengandingan Spesifikasi

Parametr CY14V104LA-BA25XIT CY14V104LA
Merek Infineon Infineon
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan nvSRAM (non-volatile SRAM) Non-Volatile SRAM (nvSRAM)
Saiz Ingatan 4 Mbit —
Organisasi 512K x 8 —
Access Time 25 ns 25 ns (BA25) or 45 ns (BA45)
Antaramuka Parallel Parallel (asynchronous SRAM-compatible)
Core Supply Voltage (VCC) 3.0 V to 3.6 V —
I/O Supply Voltage (VCCQ) 1.65 V to 1.95 V —
STORE Cycles 1 million —
Data Retention 20 years [DATA_NEEDED: retention years]
Read/Write/RECALL Cycles Infinite —
AutoStore Yes (external VCAP 61 uF to 180 uF) —
Non-volatile Technology QuantumTrap —
Kemasan 48-FBGA (6x10 mm), TFBGA 48-FBGA (6 x 10 x 1.20 mm)
Jenis Pemasangan Surface Mount Surface Mount
Temperature Grade Industrial —
Status RoHS Compliant Compliant
Density — 4 Mbit (512 K x 8 / 256 K x 16)
Operating Voltage — 3.3 V (3.0 V min, 3.6 V max)
Bus Width — x8 / x16 selectable (BYTE pin)
Suhu Operasi — -40 C to +85 C (industrial)
STORE Time (typical) — [DATA_NEEDED: STORE time in ms]
RECALL Time (typical) — [DATA_NEEDED: RECALL time in ms]
Active Supply Current (Icc) — [DATA_NEEDED: Icc active mA]
Standby Current (Isb) — [DATA_NEEDED: Isb uA]
Hardware STORE Pin — HSB (active low)
Auto STORE on VCC Drop — Yes (integrated VCc monitor)
Read/Write Endurance — Unlimited (SRAM side)

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