EP3C120F780C8NAE vs EP3C120F780I7N Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci EP3C120F780C8NAE disebabkan oleh Altera dan EP3C120F780I7N disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | EP3C120F780C8NAE | EP3C120F780I7N |
|---|---|---|
| Merek | Altera | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | NRND | Aktif |
| Family | Cyclone III | — |
| Logic Elements | 119,088 | — |
| Embedded Memory (bits) | 3,981,312 | — |
| Embedded 18x18 Multipliers | 531 | 288 |
| PLLs | 4 | 4 |
| Maximum User I/O Pins | 531 | 531 |
| Speed Grade | 8 (commercial) | I7 (industrial, fast) |
| Kemasan | 780-ball FBGA (FineLine BGA) | 780-ball FBGA (F780), 1.0 mm pitch, 23 x 23 mm |
| Package Pitch | 1.0 mm | — |
| Package Size | 29 x 29 mm | — |
| Process Node | 65 nm | — |
| Core Voltage | 1.2 V (typ) | 1.2 V |
| Suhu Operasi | -40C to +85C (industrial) | -40 °C to +100 °C (Industrial) |
| Configuration Modes | JTAG, AS, AP, PS | AS, AP, FPP, JTAG |
| Status RoHS | Pb-free (lead-free per 'N' suffix) | Compliant |
| Memory Interfaces | DDR, DDR2, QDR II SRAM | — |
| Series | — | Cyclone III |
| Logic Elements (LEs) | — | 119,088 |
| Logic Array Blocks (LABs) | — | 7,443 |
| Embedded Memory Bits | — | 3,981,312 |
| M9K Memory Blocks | — | 432 |
| Process Technology | — | 65 nm TSMC low-power |
| Maximum Internal Frequency | — | 472 MHz |