EP3SE260H780C4L vs EP3SE260H780C4LG Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci EP3SE260H780C4L disebabkan oleh Intel dan EP3SE260H780C4LG disebabkan oleh Altera. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr EP3SE260H780C4L EP3SE260H780C4LG
Merek Intel Altera
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup NRND Aktif
Family Stratix III E Stratix III Enhanced (EP3SE)
Logic Elements 255,000 254,400
LABs/CLBs 10,200 —
Total RAM Bits 16,672,768 (16.7 Mbit) —
User I/O Count 488 —
Kemasan 780-ball FCBGA (HBGA 33x33 mm) 780-ball FineLine BGA (HBGA, 29 mm x 29 mm, 1.0 mm pitch)
Speed Grade C4 (middle/slow tier) C4 (commercial, mid-speed tier)
Core Voltage 0.9 V (nominal) —
Suhu Hubungan Operasi 0C to +85C (commercial) —
Jenis Pemasangan Surface Mount (flip-chip BGA) Surface Mount (BGA)
Aras MSL [DATA_NEEDED: MSL level] 3 (per JEDEC J-STD-020)
Status RoHS Compliant (lead-free per datasheet) Compliant (Pb-free HBGA)
Transceivers Up to 24 multi-gigabit transceivers —
Memory Interface DDR3, DDR2, QDRII+, RLDRAM II controllers —
Configuration Mode PS, FPP, JTAG with EPCS/EPCQ —
Adaptive Logic Modules (ALMs) — 101,760
Embedded Memory (M9K + M144K) — 18.36 Mbits
DSP Blocks (18-bit x 18-bit) — 768
18-bit x 18-bit Multipliers — 1,536
Transceivers (full-duplex) — 8 (up to 6.375 Gbps)
Maximum User I/O Pins — 488
Temperature Grade — Commercial (0C to +85C junction)
Process Technology — 65 nm TSMC low-power CMOS
Operating Voltage (Core) — 0.9 V / 1.0 V / 1.1 V (programmable)
External Memory Interface — Up to 800 Mbps DDR3, QDR II+, RLDRAM II
Hard IP Blocks — PCIe Gen2, 10GbE MAC, memory controllers

Laporan Datasheet & Sumber

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